LIGITEK LMD5702BEGR-R1-XX Dot matrix digit led display (0.7inch) Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
DOT MATRIX DIGIT LED DISPLAY (0.7Inch)
LMD5702BEGR/R1-XX
DATA SHEET
DOC. NO
:
QW0905- LMD5702BEGR/R1-XX
REV.
: A
DATE
: 08 - Feb. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/8
PART NO. LMD5702BEGR/R1-XX
Package Dimensions
10.16
(0.4")
2.54*5=
12.7
(0.5")
17.7
(0.7")
15.24
(0.6")
LMD5702BEGR/R1-XX
LIGITEK
ψ 2*35
12.7
(0.5")
1 14
6.1(0.24") 2 15
3
16
4
17
5
4.8±0.5
7
6
ψ 0.5
TYP
13
12
11
10
9
8
2.54*3=
7.62(0.3")
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
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Page 2/8
PART NO. LMD5702BEGR/R1-XX
Internal Circuit Diagram
LMD5702BXXR/R1-XX
COLUMN
ROW PIN
1
1
3
3
2
2
1
15
14 17
13
2
12
3
11
4
16
5
4
6
5
7
6
RED
GREEN
5
4
7
9
8
10
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Property of Ligitek Only
Page 3/8
PART NO. LMD5702BEGR/R1-XX
Electrical Connection
PIN NO.
LMD5702BEGR/R1-XX
PIN NO.
LMD5702BEGR/R1-XX
1
Anode Column 2 (Green)
10
Anode Column 5 (Red)
2
Anode Column 1 (Red)
11
Cathode Row 3
3
Anode Column 1 (Green)
12
Cathode Row 2
4
Cathode Row 5
13
Cathode Row 1
5
Cathode Row 6
14
Anode Column 3 (Green)
6
Cathode Row 7
15
Anode Column 2 (Red)
7
Anode Column 4 (Green)
16
Cathode Row 4
8
Anode Column 5 (Green)
17
Anode Column 3 (Red)
9
Anode Column 4 (Red)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD5702BEGR/R1-XX
Page 4/8
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
E
G
Forward Current Per Chip
IF
30
30
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
120
120
mA
Power Dissipation Per Chip
PD
100
100
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
Material Emitted or anode
CHIP
PART NO
GaAsP/GaP Orange
LMD5702BEGR/R1-XX
GaP
Green
Common
Anode
Electrical
λP
(nm)
△λ
Vf(v)
(nm)
Iv(mcd)
IV-M
Min. Typ. Max. Min. Typ.
640
45
1.7
2.1
2.6
3.05
5.0
565
30
1.7
2.1
2.6
5.0
8.5
Note : 1.The forward voltage data did not including ± 0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
2:1
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Page 5/8
PART NO. LMD5702BEGR/R1-XX
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λp
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD5702BEGR/R1-XX
Page 6/8
Typical Electro-Optical Characteristics Curve
E CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
Fig.4 Relative Intensity vs. Temperature
1.2
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
1.1
1.0
0.9
0.8
-20
0
20
40
60
80
100
Relative Intensity@20mA
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
650
700
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
550
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
750
100
LIGITEK ELECTRONICS CO.,LTD.
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Page 7/8
PART NO. LMD5702BEGR/R1-XX
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD5702BEGR/R1-XX
Page 8/8
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5℃ &-40 ℃±5 ℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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