MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H • • • • • IC Collector current ........................ 300A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 2–M6 2–M4 108MAX. 4–φ6.5 93±0.3 C BX 48±0.3 BX 9 B 20 E C 62MAX. 20 E 16 B 29 LABEL 41.5MAX. 21 36MAX. 25.5MAX. 13 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V Conditions 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open IC Collector current DC –IC Collector reverse current DC (forward diode current) 300 A PC Collector dissipation TC=25°C 1980 W IB Base current DC 16 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 3000 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Charged part to case, AC for 1 minute Main terminal screw M6 Mounting screw M6 — Mounting torque B terminal screw M4 BX terminal screw M4 — Typical value Weight ELECTRICAL CHARACTERISTICS 7 V 300 A 2500 V 1.96~2.94 N·m 20~30 kg·cm 1.96~2.94 N·m 20~30 kg·m 0.98~1.47 N·m 10~15 kg·cm 0.98~1.47 N·m 10~15 kg·cm 460 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V — — 4.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open — — 4.0 mA IEBO Emitter cutoff current VEB=7V — — 400 mA VCE (sat) Collector-emitter saturation voltage — — 2.5 V VBE (sat) Base-emitter saturation voltage — — 3.5 V –VCEO Collector-emitter reverse voltage –IC=300A (diode forward voltage) — — 1.85 V hFE DC current gain IC=300A, VCE=2.8V/5V 75/100 — — — — — 3.0 µs Switching time VCC=600V, IC=300A, IB1=–IB2=6A — — 15 µs — — 3.0 µs Transistor part — — 0.063 °C/ W Diode part — — 0.3 °C/ W Conductive grease applied — — 0.04 °C/ W IC=300A, IB=6A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 500 DC CURRENT GAIN hFE IB=4.0A 400 IB=2.0A 300 IB=1.0A 200 IB=0.4A 100 0 Tj=25°C 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 7 5 3 2 10 0 7 5 3 2 10 –1 1.8 2.2 2.6 3.0 BASE-EMITTER VOLTAGE 3.4 3.8 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 2 7 IB=6A 5 Tj=25°C Tj=125°C 3 2 10 1 7 5 3 2 10 –1 10 0 2 3 4 5 710 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 IC=200A IC=300A 1 0 3 4 5 710 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 BASE CURRENT IB (A) ton, ts, tf (µs) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 3 VCE(sat) COLLECTOR CURRENT IC (A) 5 IC=400A VBE(sat) 10 0 7 5 3 2 VBE (V) Tj=25°C Tj=125°C VCE=2.8V 10 2 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 4 VCE=5.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=2.8V Tj=25°C 10 1 Tj=25°C Tj=125°C 10 3 7 5 3 2 VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 2 7 5 3 2 10 4 7 5 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) IB=8.0A 10 2 7 VCC=600V 5 IB1=–IB2=6A Tj=25°C 3 Tj=125°C 2 10 1 7 5 3 2 ts tf 10 0 7 5 3 2 ton 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE 10 2 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 800 VCC=600V IB1=6A IC=300A Tj=25°C Tj=125°C COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) SWITCHING TIME VS. BASE CURRENT (TYPICAL) ts 10 1 7 5 4 3 2 tf 10 0 10–1 2 3 4 5 7 10 0 600 400 Tj=125°C 200 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT –IB2 (A) 400 600 800 1000 VCE (V) DERATING FACTOR OF F. B. S. O. A. 90 100µS 80 10 2 7 5 3 2 10 1 7 5 3 TC=25°C 2 NON–REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SECOND BREAKDOWN AREA 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 710 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 0.08 TIME (s) DERATING FACTOR (%) 50µS µS 200 S DC 1m COLLECTOR CURRENT IC (A) 200 100 COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 IB2=–6A IB2=–12A 10 3 7 5 3 2 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25°C Tj=125°C 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 3 2 3200 2800 Irr (A), Qrr (µc) 2400 2000 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) VCC=600V IB1=–IB2=6A Tj=25°C Tj=125°C 10 2 7 5 3 2 10 2 Irr Qrr 10 1 trr (µs) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr 10 1 10 0 7 5 3 2 10 0 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 0.40 Zth (j–c) (°C/ W) 0.32 0.24 0.16 0.08 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999