KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA (MAX) • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDS Gate-Drain Voltage Parameter Ratings -50 Units V IG Gate-Current 10 mA PD Collector Dissipation 100 mW TJ Junction Temperature 125 °C TSTG Storage Temperature -55 ~ 125 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVGDS Parameter Gate-Drain Breakdown Voltage Test Condition VDS=0, IG= -100µA Min. -50 IGSS Gate Leak Current VGS= -30V, VDS=0 -1 nA IDSS Drain Leak Current VDS=10V, VGS=0 0.3 6.5 mA -5 VGS (off) Gate-Source Voltage VDS=10V, ID=0.1µA -0.4 YFS Forward Transfer Admittance VDS=10V, VGS=0, f=1KHz 1.2 Typ. Max. Units V V mS Ciss Input Capacitance VDS=0, VGS=0, f=1MHz 8.2 pF Crss Feedback Capacitance VGD=10V, VDS=0 f=1MHz 2.6 pF NF Noise Figure VDS=15V, VGS=0 RG=100KΩ f=120Hz 0.5 5 dB IDSS Classification Classification R O Y G IDSS(mA) 0.30 ~ 0.75 0.60 ~ 1.40 1.20 ~ 3.00 2.60 ~ 6.50 ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 KSK30 Typical Characteristics 6.4 3.0 VGS = 0V VDS = 10V 5.6 ID[mA], DRAIN CURRENT VGS = -0.2V 2.0 VGS = -0.4V V 1.5 S =0 VGS = -0.6V 1.0 VD ID[mA], DRAIN CURRENT 2.5 VGS = -0.8V 0.0 -1.6 -40 4.0 3.2 2.4 RS = 1kΩ 1.6 VGS = -1.0V VGS = -1.2V VGS = -1.4V VGS = -1.6V 0.5 4.8 RS = 2kΩ 0.8 -0.8 -20 0 VGS[V], DRAIN-SOURCE VOLTAGE 20 40 RS = 5kΩ RS = 10kΩ 0.0 -3.2 60 -2.8 VDS[V], DRAIN-SOURCE VOLTAGE -2.4 VGS = 0V VGS = -0.2V VGS = -0.4V VGS = -0.6V VGS = -0.8V VGS = -1.0V VGS = -1.2V VGS = -1.6V VGS = -1.4V 0.0 0.0 0.8 1.6 2.4 3.2 4.0 lYFSl[mS], FORWARD TRANSTER ADMITTANCE ID[mA], DRAIN CURRENT 3.2 0.8 -0.4 0.0 VDS = 10V f = 1KHz 3.2 2.4 1.6 0.8 0.0 -4.0 -3.2 -2.4 -1.6 -0.8 0.0 VGS[V], GATE-SOURCE VOLTAGE Figure 4. Yfs -VGS Figure 3. ID-VDS -10 6.4 VGS(off)[V], GATE-SOURCE VOLTAGE VDS = 10V f = 1kHz 4.8 S = A S= 1 7m I DS 0. A = 2.8 .7m I DSS mA IDSS = 6m A I DS SS = 0. 4m A 3.2 ID lYFSl [mS], FORWARD TRANSFER ADMITTANCE -0.8 4.0 VDS[V], DRAIN-SOURCE VOLTAGE 1.6 -1.2 Figure 2. ID-VGS 4.0 1.6 -1.6 VGS[V], GATE-SOURCE VOLTAGE Figure 1. Static Characteristic 2.4 -2.0 0.0 0.0 1.6 3.2 4.8 ID[mA], DRAIN CURRENT Figure 5. Yfs -ID ©2002 Fairchild Semiconductor Corporation 6.4 IDSS :VDS = 10V VGS=0 VGS(off):VDS =10V ID = 0.1µ A -1 - 0.1 0.1 1 10 IDSS[mA], DRAIN CURRENT Figure 6. VGS(off)-IDSS Rev. B1, November 2002 KSK30 1000 100 Ciss[pF], INPUT CAPACITACE 10 IDSS :VDS=10V VGS=0V lYFSl:VDS=10V VGS=0V f=1kHz Ta = 25℃ 1 Crss[pF], FEEDBACK CAPACITACE lYFSl [mS], FORWARD TRANSFER ADMITTANCE Typical Characteristics (Continued) Ciss: VDS = 0 Crss: VGS = 0 f = 1MHz 100 10 1 0.1 0.1 0.1 1 10 100 -0 -2 -4 -6 -8 -10 VGD[V], GATE-DRAIN VOLTAGE VGS[V], GATE-SOURCE VOLTAGE IDSS[mA], DRAIN CURRENT Figure 7. Yfs -IDSS Figure 8. Ciss-VGS, Crss-VGD 160 PC[mW], POWER DISSIPATION 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 9. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 KSK30 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1