BD433/5/7 BD434/6/8 ® COMPLEMENTARY SILICON POWER TRANSISTORS ■ ■ STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD434, BD436, and BD438 respectively. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD433 BD435 BD437 PNP BD434 BD436 BD438 V CBO Collector-Base Voltage (I E = 0) 22 32 45 V V CES Collector-Emitter Voltage (V BE = 0) 22 32 45 V V CEO Collector-Emitter Voltage (I B = 0) 22 32 45 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 4 A Collector Peak Current (t ≤ 10 ms) Base Current 7 A 1 A IC I CM IB P tot T stg Tj Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature 36 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. February 2003 1/4 BD433 BD434 BD435 BD436 BD437 BD438 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.5 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CBO Collector Cut-off Current (I E = 0) Parameter for BD433/434 for BD435/436 for BD437/438 V CB = 22 V V CB = 32 V V CB = 45 V 100 100 100 µA µA µA I CES Collector Cut-off Current (V BE = 0) for BD433/434 for BD435/436 for BD437/438 V CE = 22 V V CE = 32 V V CE = 45 V 100 100 100 µA µA µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE ∗ h FE ∗ Test Conditions I C = 100 mA for BD433/434 for BD435/436 for BD437/438 Collector-Emitter Saturation Voltage IC = 2 A I B = 0.2 A for BD433/434 for BD435/436 for BD437/438 Base-Emitter Voltage I C = 10 mA IC = 2 A DC Current Gain I C = 10 mA I C = 500 mA IC = 2 A h FE1 /h FE2 ∗ Matched Pair fT Transition frequency 2/4 V CE = 5 V for BD433/434 for BD435/436 for BD437/438 VCE = 1 V V CE = 1 V for BD433/434 for BD435/436 for BD437/438 V CE = 1 V I C = 250 mA V CE = 1 V Typ. V V V 22 32 45 0.2 0.2 0.2 0.5 0.5 0.6 0.58 V CE = 5 V V CE = 1 V for BD433/434 for BD435/436 for BD437/438 I C = 500 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Min. V 1.1 1.1 1.2 40 40 30 85 V V V V V V 130 130 130 140 50 50 40 1.4 3 MHz BD433 BD434 BD435 BD436 BD437 BD438 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.425 b 0.7 0.9 0.028 0.035 b1 0.40 0.65 0.015 0.025 C 2.4 2.7 0.094 0.106 c1 1.0 1.3 0.039 0.051 D 15.4 16.0 0.606 0.630 e 2.2 0.087 e3 4.4 0.173 F G 3.8 3 0.150 3.2 H 0.118 0.126 2.54 0.100 H2 2.15 0.084 I 1.27 0.05 O 0.3 0.011 V o 10 10o 1: Base 2: Collector 3: Emitter 0016114/B 3/4 BD433 BD434 BD435 BD436 BD437 BD438 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4