EIC LL5711 Schottky barrier diode Datasheet

LL5711 and LL6263
SCHOTTKY BARRIER DIODES
MiniMELF (SOD-80C)
VRRM : 70V , 60V
Cathode Mark
φ 0.063 (1.64)
FEATURES :
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices, steering, biasing and coupling diodes for
fast switching and low logic level applications.
• This diode is also available in the DO-35 case with
type designation 1N5711 and 1N6263.
• Pb / RoHS Free
0.055 (1.40)
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
Mounting Pad Layout
0.098 (2.50)
Max.
0.049 (1.25)Min.
0.079 (2.00)Min.
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at
25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
LL5711
Repetitive Peak Reverse Voltage
LL6263
Value
70
VRRM
PD
400(1)
Maximum Single Cycle Surge 10 µs Square Wave
IFSM
2.0
TJ
Storage temperature range
TS
V
60
Power Dissipation (Infinite Heatsink)
Junction Temperature
Unit
125
mW
A
°C
(1)
°C
-55 to + 150 (1)
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
LL5711
LL6263
Test Condition
V(BR)R
IR = 10 µA
Reverse Current
IR
Forward Voltage Drop
VF
VR = 50 V
IF = 1mA
IF = 15mA
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
LL5711
LL6263
Cd
VR = 0 V, f = 1MHz
Trr
IF = IR = 5mA,
recover to 0.1IR
Min
Typ
Max
70
60
-
-
200
0.41
1.0
2.0
2.2
-
-
1.0
Unit
V
nA
V
pF
ns
Note: (1) Valid provided that electrodes are kept at ambient temperature
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( LL5711 and LL6263 )
Typical variation of forward current
and forward voltage for primary conduction
through the schottky barrier
Typical forward conduction curve
of combination schottky barrier
and PN junction guard ring
10
100
Forward Current , IF (mA)
Forward Current , IF (mA)
5
2
1
0.5
0.2
0.1
0.05
80
60
40
20
0.02
0.01
0
0
0.5
1
0
0.5
Forward Voltage , VF (V)
Forward Voltage , VF (V)
Typical capacitance curve as a
function of reverse voltage
Typical variation of reverse current
at various temperatures
100
2
50
Tj = 25°C
Reverse Current , IR (µA)
20
Diode Capacitance , Cd (pF)
1
1
Ta = 125°C
10
5
2
1
0.5
0.2
Ta = 25°C
0.1
0.05
0.02
0.01
0
0
10
20
30
40
Reverse Voltage , VR (V)
Page 2 of 2
50
0
10
20
30
40
50
Reverse Voltage , VR (V)
Rev. 02 : March 24, 2005
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