MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50E2Y/E3Y-H • • • • • IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC chopper, DC motor controllers, Inverters OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 20 20 E1 27 A1 C1 D2 D1 φ6.5 10.5 13 10.5 34 (E2Y) (7) 80 E1 B1 12 B1 Tab#110, t=0.5 E1 (E3Y) D2 (8) LABEL 22.5 31 6.5 M5 D1 C1 E1 K1 E1 B1 MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Transistor part including D1, Tj=25°C) Parameter Conditions Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 50 A –IC Collector reverse current DC (forward diode current) 50 A PC Collector dissipation TC=25°C 310 W IB Base current DC 3 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 500 A ABSOLUTE MAXIMUM RATINGS Symbol (Diode part (D2), Tj=25°C) Ratings Unit VRRM Repetitive peak reverse voltage Parameter 600 V VRSM Non-repetitive peak reverse voltage 720 V VR (DC) DC reverse voltage 480 V IDC DC current DC circuit, resistive, inductive load 50 A IFSM Surge (non-repetitive) forward current Peak value of one cycle of 60Hz (half wave) I2t I2t for fusing Value for one cycle of surge current ABSOLUTE MAXIMUM RATINGS Conditions 1000 A 4.2 × 103 A2s (Common) Parameter Ratings Unit Tj Junction temperature –40~150 °C Tstg Storage temperature –40~125 °C Viso Isolation voltage Symbol Conditions Charged part to case, AC for 1 minute Main terminal screw M5 — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.96~2.94 N·m 20~30 kg·cm 210 g (Transistor part including D1, Tj=25°C) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 200 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage –IC=50A (diode forward voltage) — — 1.75 V hFE DC current gain IC=50A, VCE=2V/5V 75/100 — — — — — 1.5 µs Switching time VCC=300V, IC=50A, IB1=–IB2=1A — — 12 µs — — 3.0 µs Transistor part — — 0.4 °C/ W Diode part — — 1.3 °C/ W Conductive grease applied — — 0.15 °C/ W IC=50A, IB=0.65A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS Symbol (Diode part (D2), Tj=25°C) Parameter Limits Test conditions Min. Typ. Max. Unit mA IRRM Repetitive peak reverse current VR=VRRM, Tj=150°C — — 5.0 VFM Forward voltage IF=50A — — 1.5 V trr Reverse recovery time — — 0.9 µs Qrr Reverse recovery charge — — 20 µC Rth (j-c) Thermal resistance Junction to case — — 0.65 °C/ W Rth (c-f) Contact thermal resistance Conductive grease applied (case to fin) — — 0.15 °C/ W IF=50A, di/dt=–100A/µs, VR=300V, Tj=150°C PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 DC CURRENT GAIN hFE IB=1A IB=0.65A 80 IB=0.3A IB=0.2A 60 IB=0.1A 40 20 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 2.0 2.4 BASE-EMITTER VOLTAGE 10 0 7 5 4 3 2 Tj=25°C Tj=125°C 2.8 VBE (V) 3.2 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) 10 0 7 5 4 3 2 1.6 VCE=2.0V VCE (V) VCE=2.0V Tj=25°C 10 –1 1.2 VCE=5.0V 10 0 5 COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 1 7 5 4 3 2 10 –1 SATURATION VOLTAGE Tj=25°C COLLECTOR CURRENT IC (A) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 3 7 5 4 3 2 10 2 7 5 4 3 2 VBE(sat) VCE(sat) IB=0.65A Tj=25°C Tj=125°C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 4 3 2 1 IC=30A IC=50A IC=20A 0 10 –2 2 3 4 5 7 10 –1 ton, ts, tf (µs) Tj=25°C Tj=125°C SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 2 3 4 5 7 10 0 10 1 7 5 4 3 VCC=300V IB1=–IB2=1A 2 ton 10 0 7 5 4 3 2 10 0 BASE CURRENT IB (A) 2 3 4 5 7 10 1 2 3 4 5 7 10 2 IC (A) 160 Tj=125°C COLLECTOR CURRENT IC (A) ts, tf (µs) SWITCHING TIME Tj=25°C Tj=125°C REVERSE BIAS SAFE OPERATING AREA 3 2 ts 10 1 7 VCC=300V 5 IB1=1A 4 IC=50A 3 2 tf 10 0 7 5 4 3 10 –1 Tj=25°C Tj=125°C 2 3 4 5 7 10 0 140 120 60 40 20 10 0 7 5 3 2 TC=25°C NON-REPETITIVE 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) 200 400 600 800 VCE (V) DERATING FACTOR OF F. B. S. O. A. 100 SECOND BREAKDOWN AREA 90 DERATING FACTOR (%) s 10 1 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE 50 10 0µ 0µ s s C D s 1m m –3A –5A 80 FORWARD BIAS SAFE OPERATING AREA 10 IB2=–1A 100 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT –IB2 (A) COLLECTOR CURRENT IC (A) tf COLLECTOR CURRENT SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 3 2 ts 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE TC (°C) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 5 0.5 Zth (j-c) (°C/W) 0.4 0.3 0.2 0.1 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) PERFORMANCE CURVES (Diode part (D1)) MAXIMUM SURGE CURRENT IFSM (A) 10 2 7 5 4 3 2 SURGE FORWARD CURRENT FORWARD CURRENT IF (A) FORWARD CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 0.4 Tj=25°C Tj=125°C 0.8 1.2 1.6 2.0 FORWARD VOLTAGE 2.4 10 2 Tj=25°C Tj=125°C VCC=300V IB1=–IB2=1A 100 0 10 0 10 0 10 0 Qrr 7 5 3 trr 2 10 –1 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 IF (A) 2 3 4 5 7 10 1 2 3 4 5 7 10 2 1.6 10 1 Irr FORWARD CURRENT 200 TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0 Zth (j-c) (°C/W) 7 5 3 2 300 CONDUCTION TIME (CYCLES AT 60Hz) trr (µs) Irr (A), Qrr (µc) 10 1 400 VF (A) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10 2 7 5 3 2 500 1.2 0.8 0.4 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES (Diode part (D2)) 10 3 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 7 1.0 Tj=25°C 0.8 10 2 7 5 3 2 Zth (j–c) (°C/W) 10 1 7 5 3 2 10 0 1.0 1.4 1.8 2.2 FORWARD VOLTAGE VF (V) 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) MAXIMUM SURGE CURRENT REVERSE RECOVERY CHARACTERISTICS (VS. IF) (TYPICAL) 1000 800 Irr (A), Qrr (µC) IFSM (A) 0.4 0.2 0.6 SURGE FORWARD CURRENT 0.6 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 VR=300V 5 di/dt=–100A/µs 3 Irr 2 10 2 10 1 7 5 3 2 10 1 trr (µs) FORWARD CURRENT IF (A) MAXIMUM FORWARD CHARACTERISTIC Qrr 10 0 10 0 7 5 trr 3 Tj=25°C 2 Tj=150°C 10 –1 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) 10 2 7 VR=300V 5 IF=50A 3 Tj=25°C 2 Tj=150°C 10 1 7 5 3 2 10 2 Irr Qrr 10 1 trr (µs) Irr (A), Qrr (µC) REVERSE RECOVERY CHARACTERISTICS (VS. di/dt) (TYPICAL) 10 0 10 0 7 5 trr 3 2 10 –1 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 di/dt (A/µs) Feb.1999