ON MCR12DSN-001 Sensitive gate silicon controlled rectifiers reverse blocking thyristor Datasheet

MCR12DSM, MCR12DSN
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
http://onsemi.com
SCRs
12 AMPERES RMS
600 − 800 VOLTS
Features
•
•
•
•
•
•
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Packages are Available
G
A
K
MARKING
DIAGRAMS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz,
Gate Open)
MCR12DSM
MCR12DSN
VDRM,
VRRM
On−State RMS Current
(180° Conduction Angles; TC = 75°C)
IT(RMS)
12
A
Average On−State Current
(180° Conduction Angles; TC = 75°C)
IT(AV)
7.6
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
ITSM
100
A
Circuit Fusing Consideration (t = 8.3 msec)
I2t
41
A2sec
PGM
5.0
W
PG(AV)
0.5
W
Forward Peak Gate Power
(Pulse Width ≤ 1.0 sec, TC = 75°C)
Forward Average Gate Power
(t = 8.3 msec, TC = 75°C)
Value
4
Unit
V
1 2
DPAK
CASE 369C
STYLE 4
YWW
R1
2DSxG
3
600
800
4
DPAK−3
CASE 369D
STYLE 4
1
2
3
Y
WW
R12DSx
G
Forward Peak Gate Current
(Pulse Width ≤ 1.0 sec, TC = 75°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to 110
°C
Storage Temperature Range
Tstg
−40 to 150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
YWW
R1
2DSxG
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
1
Publication Order Number:
MCR12DSM/D
MCR12DSM, MCR12DSN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,− Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Thermal Resistance − Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
Max
Unit
RJC
RJA
RJA
2.2
88
80
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
500
12.5
18
V
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 4)
(VAK = Rated VDRM or VRRM; RGK = 1.0 K)
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
A
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage, (IGR = 10 A)
VGRM
10
Peak Reverse Gate Blocking Current, (VGR = 10 V)
IGRM
−
−
1.2
A
Peak Forward On−State Voltage (Note 5), (ITM = 20 A)
VTM
−
1.3
1.9
V
5.0
−
12
−
200
300
0.45
−
0.2
0.65
−
−
1.0
1.5
−
0.5
−
1.0
−
6.0
10
0.5
−
1.0
−
6.0
10
−
2.0
5.0
2.0
10
−
Gate Trigger Current (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 )
Gate Trigger Voltage (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 )
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
Latching Current
(VD = 12 V, IG = 2.0 mA)
A
IGT
TJ = 25°C
TJ = −40°C
VGT
TJ = 25°C
TJ = −40°C
TJ = 110°C
V
IH
TJ = 25°C
TJ = −40°C
mA
IL
TJ = 25°C
TJ = −40°C
Turn−On Time
(Source Voltage = 12 V, RS = 6.0 K, IT = 16 A(pk), RGK = 1.0 K)
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 s)
mA
s
tgt
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform, RGK = 1.0 K, TJ = 110°C)
dv/dt
V/s
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Ratings apply for negative gate voltage or RGK = 1.0 k. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
5. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
6. RGK current not included in measurement.
http://onsemi.com
2
MCR12DSM, MCR12DSN
Voltage Current Characteristic of SCR
+ Current
Anode +
VTM
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
Anode −
110
105
100
95
90
dc
85
80
180°
= Conduction
Angle
75
70
0
1.0
2.0
= 30°
3.0
4.0
60°
5.0
90°
120°
6.0
7.0
16
90°
12
60°
dc
= Conduction
Angle
10
8.0
= 30°
6.0
4.0
2.0
0
0
8.0
180°
120°
14
1.0
2.0
3.0
4.0
5.0
6.0
7.0
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
Figure 1. Average Current Derating
Figure 2. On−State Power Dissipation
http://onsemi.com
3
8.0
100
1.0
TYPICAL @ TJ = 25°C
r(t) , TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
I T, INSTANTANEOUS ON−STATE CURRENT (AMPS)
MCR12DSM, MCR12DSN
MAXIMUM @ TJ = 110°C
10
MAXIMUM @ TJ = 25°C
1.0
0.1
ZJC(t) = RJC(t)Sr(t)
0.01
0
1.0
2.0
3.0
4.0
5.0
0.1
1.0
10
100
10 K
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
1.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)
RGK = 1.0 K
100
GATE OPEN
10
1.0
−40 −25
0.1
−10
5.0
20
35
50
65
80
95
−40 −25
110
−10
5.0
20
35
50
65
80
95
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
10
110
10
RGK = 1.0 K
RGK = 1.0 K
IL, LATCHING CURRENT (mA)
IH , HOLDING CURRENT (mA)
1000
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
1000
I GT, GATE TRIGGER CURRENT ( A)
0.1
1.0
0.1
−40 −25
−10
5.0
20
35
50
65
80
95
1.0
0.1
−40 −25
110
−10
5.0
20
35
50
65
80
95
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
http://onsemi.com
4
110
MCR12DSM, MCR12DSN
10
1000
8.0
STATIC dv/dt (V/ s)
IH, HOLDING CURRENT (mA)
TJ = 25°C
6.0
IGT = 25 A
4.0
70°C
100
90°C
TJ = 110°C
10
IGT = 10 A
2.0
0
1.0
100
1000
10 K
1000
100
RGK, GATE−CATHODE RESISTANCE (OHMS)
RGK, GATE−CATHODE RESISTANCE (OHMS)
Figure 9. Holding Current versus
Gate−Cathode Resistance
Figure 10. Exponential Static dv/dt versus
Gate−Cathode Resistance and Junction
Temperature
1000
1000
TJ = 110°C
VD = 800 V
TJ = 110°C
100
STATIC dv/dt (V/ s)
STATIC dv/dt (V/ s)
400 V
600 V
VPK = 800 V
10
1.0
100
IGT = 25 A
IGT = 10 A
10
1.0
100
1000
100
1000
RGK, GATE−CATHODE RESISTANCE (OHMS)
RGK, GATE−CATHODE RESISTANCE (OHMS)
Figure 11. Exponential Static dv/dt versus
Gate−Cathode Resistance and Peak Voltage
Figure 12. Exponential Static dv/dt versus
Gate−Cathode Resistance and Gate Trigger
Current Sensitivity
ORDERING INFORMATION
Package Type
Package
Shipping †
DPAK
369C
2500 / Tape & Reel
MCR12DSMT4G
DPAK
(Pb−Free)
369C
2500 / Tape & Reel
MCR12DSN−001
DPAK−3
369D
75 Units / Rail
DPAK−3
(Pb−Free)
369D
75 Units / Rail
DPAK
369C
2500 / Tape & Reel
DPAK
(Pb−Free)
369C
2500 / Tape & Reel
Device
MCR12DSMT4
MCR12DSN−001G
MCR12DSNT4
MCR12DSNT4G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
MCR12DSM, MCR12DSN
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
T
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
MCR12DSM, MCR12DSN
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
T
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
7
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MCR12DSM/D
Similar pages