Renesas BB101C Built in biasing circuit mos fet ic uhf rf amplifier Datasheet

BB101C
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
REJ03G0821-0300
(Previous ADE-208-505A)
Rev.3.00
Aug.10.2005
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics;
(NF = 2.0 dB typ. at f = 900 MHz)
• Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
Notes:
1. Marking is “AU–”.
2. BB101C is individual type number of RENESAS BBFET.
Rev.3.00 Aug 10, 2005 page 1 of 7
1. Source
2. Gate1
3. Gate2
4. Drain
BB101C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
VG2S
ID
Pch
Tch
Tstg
Ratings
6
Unit
V
+6
–0
±6
25
100
150
–55 to +150
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Symbol
V(BR)DSS
V(BR)G1SS
V(BR)G2SS
IG1SS
IG2SS
VG1S(off)
VG2S(off)
ID(op)
Min
6
+6
±6
—
—
0.2
0.4
10
Typ
—
—
—
—
—
—
—
15
Max
—
—
—
+100
±100
0.8
1.0
20
Unit
V
V
V
nA
nA
V
V
mA
Test conditions
ID = 200 µA, VG1S = VG2S = 0
IG1 = +10 µA, VG2S = VDS = 0
IG2 = +10 µA, VG1S = VDS = 0
VG1S = +5 V, VG2S = VDS = 0
VG2S = ±5 V, VG1S = VDS = 0
VDS = 5 V, VG2S = 4 V, ID = 100 µA
VDS = 5 V, VG1S = 5 V, ID = 100 µA
Forward transfer admittance
|yfs|
16
22
—
mS
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Ciss
Coss
Crss
1.2
0.7
—
16
—
1.7
1.1
0.012
20
2.0
2.2
1.5
0.03
—
3.0
pF
pF
pF
dB
dB
VDS = 5 V, VG1 = 5 V, VG2S =4 V
RG = 220 kΩ, f = 1 kHz
VDS = 5 V, VG1 = 5 V
VG2S =4 V, RG = 220 kΩ
f = 1 MHz
Rev.3.00 Aug 10, 2005 page 2 of 7
PG
NF
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 220 kΩ
VDS = 5 V, VG1 = 5 V, VG2S =4 V
RG = 220 kΩ, f = 900 MHz
BB101C
Main Characteristics
Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
Equivalent Circuit
Gate 2
Drain
Gate 1
Source
Application Circuit
VDS = 5 V
VAGC = 4 to 0.3 V
BBFET
Input
RG
VGG = 5 V
Rev.3.00 Aug 10, 2005 page 3 of 7
RFC
Output
BB101C
200
25
Drain Current ID (mA)
100
50
0
50
100
5
1
2
=
3
4
Drain Current vs. Gate1 Voltage
10
5
1
2
3
4
5
20
kΩ Ω
0
k
10 120
kΩ
150 k Ω
180
kΩ
220
kΩ
270
kΩ
0
33 0 k Ω
9
3
k Ω
470
RG =
16
V
3
12
V
2V
8
4
0
5
VDS = 5 V
RG = 150 k Ω
4
Gate2 to Source Voltage VG2S (V)
VG2S = 1 V
1
2
3
4
5
Gate1 Voltage V G1 (V)
Drain Current vs.Gate1 Voltege
Drain Current vs.Gate1 Voltege
20
20
VDS = 5 V
RG = 220 kΩ
16
Drain Current ID mA)
Drain Current ID (mA)
RG
Drain Current vs.
Gate2 to Source Voltage
15
4V
3V
12
2V
8
4
0
kΩ
10
Drain to Source Voltage VDS (V)
20
16
0
15
0
200
Ω
k
0 kΩ
2
1 50
1 kΩ
0
18 k Ω
0
22 k Ω
0
7
2 kΩ
330 k Ω
390
k Ω
470
Ambient Temperature Ta (°C)
VDS = VG1 = 5 V
0
150
VG2S = 4 V
VG1 = V
10
20
150
25
Drain Current ID (mA)
Typical Output Characteristics
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
VG2S = 1 V
1
2
3
Gate1 Voltage VG1 (V)
Rev.3.00 Aug 10, 2005 page 4 of 7
4
5
VDS = 5 V
RG = 390 kΩ
12
4V
3V
2V
8
4
VG2S = 1 V
0
1
2
3
4
Gate1 Voltage VG1 (V)
5
BB101C
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
RG = 150 k Ω
20 f = 1 kHz
4V
3V
2V
15
10
5
VG2S = 1 V
0
1
2
3
5
4
Forward Transfer Admittance |yfs| (mS)
Forward Transfer Admittance |yfs| (mS)
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
RG = 220 k Ω
20 f = 1 kHz
2V
15
10
5
VG2S = 1 V
0
1
Gate1 Voltage VG1 (V)
3
4
5
Power Gain vs. Gate Resistance
30
25
VDS = 5 V
RG = 390 k Ω
f = 1 kHz
20
25
4V
3V
15
Power Gain PG (dB)
Forward Transfer Admittance |yfs| (mS)
2
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
2V
10
5
20
15
10
5
VG2S = 1 V
0
1
2
3
0
50
5
4
Noise Figure vs. Gate Resistance
500 1000 2000
5000
Power Gain PG (dB)
30
3
2
0
50
100 200
Power Gain vs. Drain Current
4
1
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 900 MHz
Gate Resistance RG (kΩ)
Gate1 Voltage VG1 (V)
Noise Figure NF (dB)
4V
3V
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 900 MHz
100 200
25
20
15
10
5
500 1000 2000
Gate Resistance RG (kΩ)
Rev.3.00 Aug 10, 2005 page 5 of 7
5000
0
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
5
10
15
20
25
Drain Current ID (mA)
30
BB101C
Noise Figure vs. Drain Current
Drain Current vs. Gate Resistance
30
4
Drain Current ID (mA)
Noise Figure NF (dB)
25
3
2
1
0
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
5
10
15
20
25
30
100 300 1000 3000 10000
Gain Reduction vs.
Gate2 to Source Voltage
Input Capacitance vs.
Gate2 to Source Voltage
4
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
RG = 220 kΩ
f = 900 MHz
Input Capacitance Ciss (pF)
Gain Reduction GR (dB)
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
5
Gate Resistance RG (kΩ)
20
10
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
4
VDS = 5 V
VG1 = 5 V
RG = 220 kΩ
f = 1 MHz
3
2
1
1
2
3
4
Gate2 to Source Voltage VG2S (V)
Rev.3.00 Aug 10, 2005 page 6 of 7
VDS = 5 V
VG1 = 5 V
RG = 220 kΩ
f = 1 MHz
3
2
1
0
1
2
3
4
Gate2 to Source Voltage VG2S (V)
Output Capacitance vs.
Gate2 to Source Voltage
Output Capacitance Coss (pF)
10
Drain Current ID (mA)
30
0
15
0
10
30
40
0
20
5
5
BB101C
Package Dimensions
JEITA Package Code
RENESAS Code
SC-82A
Package Name
PTSP0004ZA-A
CMPAK-4(T) / CMPAK-4(T)V
D
MASS[Typ.]
0.006g
A
e2
e
Q
b1
c
B
B
E
HE
LP
Reference
Symbol
L
A
A
x M
L1
S
A
e2
A2
e
l1
b5
S
b
c
A
A1
y S
b2
A3
b
e1
b1
b3
c1
c1
c
A-A Section
l1
b4
B-B Section
Pattern of terminal position areas
A
A1
A2
A3
b
b1
b2
b3
c
c1
D
E
e
e2
HE
L
L1
LP
x
y
b4
b5
e1
l1
Q
Dimension in Millimeters
Min
0.8
0
0.8
0.25
0.35
0.1
1.8
1.15
1.8
0.3
0.1
0.2
Nom
0.9
0.25
0.32
0.42
0.3
0.4
0.13
0.11
2.0
1.25
0.65
0.6
2.1
Max
1.1
0.1
1.0
0.4
0.5
0.15
2.2
1.35
2.4
0.7
0.5
0.6
0.05
0.05
0.45
0.55
1.5
0.9
0.2
Ordering Information
Part Name
BB101CAU-TL-E
Quantity
3000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Aug 10, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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