MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M 400-470MHz 45W 12.5V MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) BLOCK DIAGRAM 2 3 1 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) • Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER RA45H4047M-E01 RA45H4047M-01 (Japan - packed without desiccator) RA45H4047M SUPPLY FORM Antistatic tray, 10 modules/tray MITSUBISHI ELECTRIC 1/9 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE MITSUBISHI RF POWER MODULE RA45H4047M OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD CONDITIONS Drain Voltage VGG<5V VGG Gate Voltage VDD<12.5V, Pin=0mW Pin Input Power Pout Output Power Tcase(OP) Tstg RATING UNIT 17 V 6 V 100 mW 55 W Operation Case Temperature Range -30 to +110 °C Storage Temperature Range -40 to +110 °C TYP MAX UNIT 470 MHz f=400-470MHz, ZG=ZL=50Ω The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER f CONDITIONS Frequency Range Pout Output Power ηT Total Efficiency nd 2fo 2 Harmonic ρin Input VSWR IGG Gate Current — Stability — Load VSWR Tolerance MIN 400 VDD=12.5V VGG=5V Pin=50mW VDD=10.0-15.2V, Pin=25-70mW, Pout<55W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout=45W (VGG control), Load VSWR=20:1 45 W 35 % -25 dBc 3:1 — 1 mA No parasitic oscillation — No degradation or destroy — All parameters, conditions, ratings, and limits are subject to change without notice. RA45H4047M MITSUBISHI ELECTRIC 2/9 23 Dec 2002 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE RA45H4047M OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) 2nd, 3rd HARMONICS versus FREQUENCY OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY 80 50 40 40 30 30 VDD=12.5V VGG=5V Pin=50mW ρ in 20 10 -40 -50 2 -60 3rd 0 0 390 400 410 420 430 440 450 460 470 480 FREQUENCY f(MHz) -70 390 400 410 420 430 440 450 460 470 480 FREQUENCY f(MHz) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 24 50 20 Gp 40 16 30 12 IDD 20 8 f=400MHz, VDD=12.5V, VGG=5V 10 4 0 60 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) Pout DRAIN CURRENT IDD(A) OUTPUT POWER Pout (dBm) POWER GAIN Gp(dB) 60 0 -15 -10 -5 0 5 10 15 24 Pout 50 40 16 30 12 20 f=430MHz, VDD=12.5V, VGG=5V 0 -15 -10 16 30 12 8 IDD f=450MHz, VDD=12.5V, VGG=5V -5 0 5 10 15 4 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 40 -15 -10 5 10 15 0 20 60 DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 20 Gp 0 0 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 24 Pout 10 -5 4 INPUT POWER Pin(dBm) 60 20 8 IDD 10 20 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 50 20 Gp INPUT POWER Pin(dBm) 0 24 Pout 50 20 Gp 40 16 30 12 20 8 IDD f=470MHz, VDD=12.5V, VGG=5V 10 0 20 -15 -10 -5 0 5 10 15 4 0 20 INPUT POWER Pin(dBm) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 100 90 80 70 60 50 40 30 20 10 0 f=400MHz, VGG=5V, Pin=50mW Pout IDD 2 RA45H4047M 20 18 16 14 12 10 8 6 4 2 0 4 6 8 10 12 14 DRAIN VOLTAGE VDD(V) 16 OUTPUT POWER Pout(W) INPUT POWER Pin(dBm) DRAIN CURRENT IDD(A) OUTPUT POWER Pout(W) nd 100 90 80 70 60 50 40 30 20 10 0 f=430MHz, VGG=5V, Pin=50mW 20 18 16 14 12 10 8 6 4 2 0 Pout IDD 2 4 6 8 10 12 14 DRAIN VOLTAGE VDD(V) MITSUBISHI ELECTRIC 3/9 DRAIN CURRENT IDD(A) 20 10 VDD=12.5V VGG=5V Pin=50mW -30 DRAIN CURRENT IDD(A) 50 HARMONICS (dBc) 60 ηT TOTAL EFFICIENCY ηT(%) 60 -20 70 DRAIN CURRENT IDD(A) Pout 70 INPUT VSWR ρin (-) OUTPUT POWER Pout(W) 80 16 23 Dec 2002 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE RA45H4047M OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) IDD 2 4 6 8 10 12 14 DRAIN VOLTAGE VDD(V) 16 12 10 IDD 40 8 30 6 20 4 10 2 0 0 2.5 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) OUTPUT POWER Pout(W) 50 Pout 12 10 IDD 40 8 30 6 20 4 10 2 0 0 2.5 RA45H4047M 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) 5.5 OUTPUT POWER Pout (W) 50 14 12 50 10 IDD 40 8 30 6 20 4 10 2 0 3 3.5 4 4.5 5 GATE VOLTAGE VGG(V) 5.5 80 DRAIN CURRENT IDD(A) OUTPUT POWER Pout (W) 60 60 Pout OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 14 Pout 16 2.5 16 f=450MHz, VDD=12.5V, Pin=50mW 16 0 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 70 6 8 10 12 14 DRAIN VOLTAGE V DD(V) f=430MHz, VDD=12.5V, Pin=50mW 70 5.5 80 4 80 14 DRAIN CURRENT IDD(A) OUTPUT POWER Pout (W) 60 Pout OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 16 f=400MHz, VDD=12.5V, Pin=50mW 70 20 18 16 14 12 10 8 6 4 2 0 IDD 2 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 80 f=470MHz, VGG=5V, Pin=50mW DRAIN CURRENT IDD(A) Pout 100 90 80 70 60 50 40 30 20 10 0 DRAIN CURRENT IDD(A) 20 18 16 14 12 10 8 6 4 2 0 16 f=470MHz, VDD=12.5V, Pin=50mW 70 60 50 14 Pout 12 10 IDD 40 8 30 6 20 4 10 2 0 0 2.5 3 3.5 4 4.5 5 GATE VOLTAGE V GG(V) MITSUBISHI ELECTRIC 4/9 DRAIN CURRENT IDD(A) f=450MHz, VGG=5V, Pin=50mW OUTPUT POWER Pout (W) 100 90 80 70 60 50 40 30 20 10 0 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE DRAIN CURRENT IDD(A) OUTPUT POWER Pout (W) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 5.5 23 Dec 2002 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE RA45H4047M OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm) 66.0 ±0.5 7.25 ±0.8 51.5 ±0.5 3 2.0 ±0.5 2 4 4.0 ±0.3 9.5 ±0.5 5 1 14.0 ±1 2-R2 ±0.5 17.0 ±0.5 60.0 ±0.5 21.0 ±0.5 3.0 ±0.3 Ø0.45 ±0.15 12.0 ±1 16.5 ±1 43.5 ±1 (50.4) (9.88) 2.3 ±0.3 7.5 ±0.5 0.09 ±0.02 3.1 +0.6/-0.4 55.5 ±1 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) RA45H4047M MITSUBISHI ELECTRIC 5/9 23 Dec 2002 MITSUBISHI RF POWER MODULE ELECTROSTATIC SENSITIVE DEVICE RA45H4047M OBSERVE HANDLING PRECAUTIONS TEST BLOCK DIAGRAM Power Meter DUT 1 Signal Generator Attenuator Preamplifier Attenuator Directional Coupler 3 2 Spectrum Analyzer 4 ZL=50Ω ZG=50Ω C1 5 Directional Coupler Attenuator Power Meter C2 + DC Power Supply VGG + DC Power Supply VDD C1, C2: 4700pF, 22uF in parallel 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT 3 2 1 4 5 RA45H4047M MITSUBISHI ELECTRIC 6/9 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE MITSUBISHI RF POWER MODULE OBSERVE HANDLING PRECAUTIONS RA45H4047M PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The soldering temperature must be lower than 260°C for a maximum of 10 seconds, or lower than 350°C for a maximum of three seconds. Ethyl Alcohol is recommend for removing flux. Trichlorethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=45W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ ηT=35% VDD Stage (W) (W) (°C/W) (A) (V) st 1 0.05 2.0 4.5 0.45 nd 12.5 2 2.0 12.0 2.4 2.80 rd 3 12.0 45.0 1.2 6.80 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.45A – 2.0W + 0.05W) x 4.5°C/W = Tcase + 16.5 °C Tch2 = Tcase + (12.5V x 2.80A - 12.0W + 2.0W) x 2.4°C/W = Tcase + 60.0 °C Tch3 = Tcase + (12.5V x 6.80A - 45.0W + 12.0W) x 1.2°C/W = Tcase + 62.4 °C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient temperature Tair=60°C and Pout=45W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (45W/35% – 45W + 0.05W) = 0.36 °C/W When mounting the module with the thermal resistance of 0.36 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 46.5 °C Tch2 = Tair + 90.0 °C Tch3 = Tair + 92.4 °C The 175°C maximum rating for the channel temperature ensures application under derated conditions. RA45H4047M MITSUBISHI ELECTRIC 7/9 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA45H4047M Output Power Control: Depending on linearity, the following two methods are recommended to control the output power: a) Non-linear FM modulation: By the gate voltage (VGG). When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. Around VGG=4V, the output power and drain current increases substantially. Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Ω? c) Is the source impedance ZG=50Ω? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA45H4047M MITSUBISHI ELECTRIC 8/9 23 Dec 2002 SALES CONTACT JAPAN: Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku Tokyo, Japan 100 Email: [email protected] Phone: +81-3-3218-4854 Fax: +81-3-3218-4861 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: [email protected] Phone: +49-2102-486-0 Fax: +49-2102-486-3670 HONG KONG: Mitsubishi Electric Hong Kong Ltd. Semiconductor Division 41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong Email: [email protected] Phone: +852 2510-0555 Fax: +852 2510-9822 FRANCE: Mitsubishi Electric Europe B.V. Semiconductor 25 Boulevard des Bouvets F-92741 Nanterre Cedex, France Email: [email protected] Phone: +33-1-55685-668 Fax: +33-1-55685-739 SINGAPORE: Mitsubishi Electric Asia PTE Ltd Semiconductor Division 307 Alexandra Road #3-01/02 Mitsubishi Electric Building, Singapore 159943 Email: [email protected] Phone: +65 64 732 308 Fax: +65 64 738 984 ITALY: Mitsubishi Electric Europe B.V. Semiconductor Centro Direzionale Colleoni, Palazzo Perseo 2, Via Paracelso I-20041 Agrate Brianza, Milano, Italy Email: [email protected] Phone: +39-039-6053-10 Fax: +39-039-6053-212 TAIWAN: Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department 9F, No. 88, Sec. 6 Chung Shan N. Road Taipei, Taiwan, R.O.C. Email: [email protected] Phone: +886-2-2836-5288 Fax: +886-2-2833-9793 U.K.: Mitsubishi Electric Europe B.V. Semiconductor Travellers Lane, Hatfield Hertfordshire, AL10 8XB, England Email: [email protected] Phone: +44-1707-278-900 Fax: +44-1707-278-837 U.S.A.: Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group 1050 East Arques Avenue Sunnyvale, CA 94085 Email: [email protected] Phone: 408-730-5900 Fax: 408-737-1129 AUSTRALIA: Mitsubishi Electric Australia, Semiconductor Division 348 Victoria Road Rydalmere, NSW 2116 Sydney, Australia Email: [email protected] Phone: +61 2 9684-7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 9898 Fax: +61 2 9684-7208 +61 2 9684 7245 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 RA45H4047M MITSUBISHI ELECTRIC 9/9 23 Dec 2002