CYSTEKEC MTB55N03N3 30v n-channel logic level enhancement mode mosfet Datasheet

Spec. No. : C723N3
Issued Date : 2009.06.12
Revised Date :
Page No. : 1/7
CYStech Electronics Corp.
30V N-Channel Logic Level Enhancement Mode MOSFET
MTB55N03N3
BVDSS
RDSON(Max)
ID
30V
55mΩ
3.5A
Features
• VDS=30V
RDS(ON)=55mΩ@VGS=10V, ID=3.5A
RDS(ON)=85mΩ@VGS=4.5V, ID=2A
• Lower gate charge
• Pb-free lead plating and Halogen-free package
Equivalent Circuit
Outline
MTB55N03N3
SOT-23
D
S
G:Gate
S:Source
D:Drain
G
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VDS
VGS
TA=25°C
TA=70°C
Pulsed Drain Current
TA=25°C
TA=70°C
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature
Power Dissipation
ID
IDM
PD
Rth, j-a
Tj, Tstg
Limits
30
±20
3.5
2.4
14 (Note 1 & 2)
1.5 (Note 3)
1 (Note 3)
100 (Note 3)
-55 ~ +175
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
3. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad
MTB55N03N3
Unit
V
V
A
A
W
°C/W
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723N3
Issued Date : 2009.06.12
Revised Date :
Page No. : 2/7
Electrical Characteristics (TA=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
IDON 1
*RDS(ON) 1
*GFS 1
Dynamic
Ciss
Coss
Crss
*td(ON) 1 2
*tr 1 2
*td(OFF) 1 2
*tf 1 2
*Qg 1 2
*Qgs 1 2
*Qgd 1 2
Source-Drain Diode
IS
ISM 3
VSD 1
Min.
Typ.
Max.
Unit
30
1
3.5
-
1.5
45
65
5
3
±100
1
10
55
85
-
V
V
nA
μA
μA
A
-
319
66
53
8
2.5
20
5
6
0.8
1.8
-
-
-
2
8
1.2
1
Pulse test : Pulse width≤300μs, Duty cycle≤2%
2
Independent of operating temperature
3
Pulse width limited by maximum junction temperature
Test Conditions
S
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=24V, VGS=0
VDS=20V, VGS=0, Tj=125°C
VDS=5V, VGS=10V
ID=3.5A, VGS=10V
ID=2A, VGS=4.5V
VDS=5V, ID=3.5A
pF
VDS=10V, VGS=0, f=1MHz
ns
VDS=10V, ID=1A,VGS=10V,
RG=6Ω
nC
VDS=10V, ID=3.5A, VGS=4.5V
mΩ
A
V
IF=IS, VGS=0V
Ordering Information
Device
MTB55N03N3
MTB55N03N3
Package
SOT-23
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
10
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723N3
Issued Date : 2009.06.12
Revised Date :
Page No. : 3/7
Characteristic Curves
MTB55N03N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723N3
Issued Date : 2009.06.12
Revised Date :
Page No. : 4/7
Characteristic Curves(Cont.)
MTB55N03N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723N3
Issued Date : 2009.06.12
Revised Date :
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTB55N03N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723N3
Issued Date : 2009.06.12
Revised Date :
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB55N03N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723N3
Issued Date : 2009.06.12
Revised Date :
Page No. : 7/7
SOT-23 Dimension
Marking:
A
L
Device Code
3
B
S
Date Code
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
D
K
H
Style: Pin 1.Gate 2.Source 3.Drain
J
*: Typical
DIM
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034
0.0070
0.0128
0.0266
0.0335
0.0453
0.0830
0.1083
0.0098
0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB55N03N3
CYStek Product Specification
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