Analogic AAT9121IAS-T1 30v n-channel power mosfet Datasheet

AAT9121
30V N-Channel Power MOSFET
General Description
Features
The AAT9121 30V N-Channel Power MOSFET is a
member of AnalogicTech's TrenchDMOS™ product family. Using the ultra-high density proprietary
TrenchDMOS technology, this product demonstrates high power handling and small size.
•
•
•
•
Applications
VDS(MAX) = 30V
ID(MAX) = 8A @ 25°C
Low Gate Charge
Low RDS(ON):
• 24 mΩ @VGS = 10V
• 35 mΩ @ VGS = 4.5V
SOP-8 Package
DC-DC converters for mobile CPUs
Battery-powered portable equipment
High power density DC - DC supplies
Power supplies
Absolute Maximum Ratings
Symbol
VDS
VGS
Top View
Description
D
D
D
8
7
6
5
1
S
2
S
3
S
4
G
Value
Drain-Source Voltage
Gate-Source Voltage
1
TA = 25°C
TA = 70°C
Continuous Drain Current @ TJ=150°C
IDM
IS
Pulsed Drain Current
Continuous Source Current (Source-Drain Diode) 1
TA = 25°C
Maximum Power Dissipation 1
TA = 70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
D
(TA=25°C unless otherwise noted)
ID
PD
Preliminary Information
•
•
•
•
PWMSwitch™
Units
30
±20
±8.0
±6.4
±24
2.25
2.5
1.6
-55 to 150
°C
Value
Units
50
28
°C/W
°C/W
V
A
W
Thermal Characteristics
Symbol
RθJA
RθJC
Description
Typical Junction-to-Ambient
Typical Junction-to-Case
1
Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width.
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AAT9121
30V N-Channel Power MOSFET
Electrical Characteristics
Symbol
(TJ=25°C unless otherwise noted)
Description
Conditions
DC Characteristics
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Drain-Source ON-Resistance
ID(ON)
VGS(th)
IGSS
On-State Drain Current 2
Gate Threshold Voltage
Gate-Body Leakage Current
IDSS
2
Drain Source Leakage Current
gfs
Forward Transconductance 2
Dynamic Characteristics 3
QG
Total Gate Charge
QGT
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain Charge
tD(ON)
Turn-ON Delay
tR
Turn-ON Rise Time
tD(OFF)
Turn-OFF Delay
tF
Turn-OFF Fall Time
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage
IS
Continuous Diode Current 2
VGS=0V, ID=250µA
VGS=10V, ID=8A
VGS=4.5V, ID=6.6A
VGS=10V ,VDS=5V (Pulsed)
VGS=VDS, ID=250µA
VGS=±20V, VDS=0V
VGS=0V,VDS=30V
VGS=0V,VDS=30V, TJ=55°C
VDS=15V, ID=8A
VDS=15V, ID=8A, VGS=5V
VDS=15V, ID=8A, VGS=10V
VDS=15V, ID=8A, VGS=10V
VDS=15V, ID=8A, VGS=10V
VDD=15V, VGS=10V, RD=1.8Ω ,
VDD=15V, VGS=10V, RD=1.8Ω ,
VDD=15V, VGS=10V, RD=1.8Ω ,
VDD=15V, VGS=10V, RD=1.8Ω ,
2
Min
VGS=0, IS=2.25A
TA=25ºC
Typ
Max
30
V
16
28
24
35
24
1.0
±100
1
5
15
RG=6Ω
RG=6Ω
RG=6Ω
RG=6Ω
Units
10.5
20.5
3.8
2.9
9
12
38
19
mΩ
A
V
nA
µA
S
16
28
15
20
55
28
nC
nC
nC
nC
ns
ns
ns
ns
1.1
2.25
V
A
Note 2: Pulse test: Pulse Width = 300µs
Note 3: Guaranteed by design. Not subjected to production testing.
2
9121.2001.12.0.9
AAT9121
30V N-Channel Power MOSFET
Typical Characteristics
(TJ = 25ºC unless otherwise noted)
Normalized RDS(ON)
30
10V
6V
4.5V
25
5V
ID (A)
20
4V
15
10
2V
5
3V
3.5V
0
0
1
2
3
4
5
RDS(ON) / RDS(ON) at gate = 10 V
Forward Characteristics
3
4V
2.5
3.5 V
4.5 V
5V
2
1.5
1
6V
0.5
10 V
0
VD (V)
0
5
10
15
20
25
30
ID (A)
RDS(ON) vs. VG
Transfer
30
100
5A
25
VG=VD
15A
10A
20
60
ID (A)
RDS(ON) (mΩ)
80
40
15
10
20
5
0
0
0
2
4
6
8
0
10
3
4
VG (V)
Source to Drain Voltage
Gate Charge Characteristics
5
Gate Voltage (V)
10
ISD (A)
10
1
0.6
0.8
1
1.2
8
6
4
2
0
0
VSD (V)
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2
VG (V)
100
0.1
0.4
1
5
10
15
20
25
Gate Charge (nC)
3
AAT9121
30V N-Channel Power MOSFET
Ordering Information
Part Number
Package
Marking
SOP-8
Bulk
Tape and Reel
AAT9121IAS-B1
AAT9121IAS-T1
Package Information
SOP-8
Dim
E H
D
7 (4x)
A
c
A2
Q
b
y
e
A1
L
A
A1
A2
B
C
D
E
e
H
L
Y
θ1
Millimeters
Min
Max
1.35
1.75
0.10
0.25
1.45
0.33
0.51
0.19
0.25
4.80
5.00
3.80
4.00
1.27
5.80
6.20
0.40
1.27
0.00
0.10
0°
8°
Inches
Min
Max
0.053
0.069
0.004
0.010
0.057
0.013
0.020
0.007
0.010
0.189
0.197
0.150
0.157
0.050
0.228
0.244
0.016
0.050
0.000
0.004
0°
8°
Note:
1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
2. TOLERANCE 0.1000mm (4mil) UNLESS
OTHERWISE SPECIFIED
3. COPLANARITY: 0.1000mm
4. DIMENSION L IS MEASURED IN GAGE PLANE.
5. CONTROLLING DIMENSION IS MILLIMETER;
CONVERTED INCH DIMENSIONS ARE NOT
NECESSARILY EXACT.
Advanced Analogic Technologies, Inc.
1250 Oakmead Parkway, Suite 310, Sunnyvale, CA 94086
Phone (408) 524-9684
Fax (408) 524-9689
4
9121.2001.12.0.9
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