Toshiba MP4015 Toshiba power transistor module Datasheet

MP4015
TOSHIBA Power Transistor Module
Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
MP4015
Industrial Applications
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive.
Inductive Load Switching.
Unit: mm
·
Small package by full molding (SIP 10 pin)
·
High collector power dissipation (4 devices operation)
: PT = 4 W (Ta = 25°C)
·
High collector current: IC (DC) = 5 A (max)
·
High DC current gain: hFE = 1000 (min) (VCE = 4 V, IC = 3 A)
·
Zener diode included between collector and base.
·
Unclamped inductive load energy: ES/B = 100 mJ (min)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
55
V
Collector-emitter voltage
VCEO
60 ± 10
V
Emitter-base voltage
VEBO
6
V
DC
IC
5
Pulse
ICP
8
IB
0.5
A
PC
2.0
W
PT
4.0
W
Tj
150
°C
Tstg
−55 to 150
°C
Collector current
Continuous base current
Collector power dissipation
(1 device operation)
Collector power dissipation
(4 devices operation)
Junction temperature
Storage temperature range
JEDEC
―
JEITA
―
TOSHIBA
A
2-25A1A
Weight: 2.1 g (typ.)
Array Configuration
3
5
4
2
7
6
9
8
1
10
R1 R2
R1 ≈ 5 kΩ
R2 ≈ 150 Ω
1
2002-11-20
MP4015
Thermal Characteristics
Characteristics
Thermal resistance of junction to
ambient
Symbol
Max
Unit
ΣRth (j-a)
31.3
°C/W
TL
260
°C
(4 devices operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 45 V, IE = 0 A
―
―
10
µA
Collector cut-off current
ICEO
VCE = 45 V, IB = 0 A
―
―
10
µA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0 A
0.3
―
10
mA
V (BR) CBO
IC = 10 mA, IE = 0 A
50
―
70
V
hFE (1)
VCE = 4 V, IC = 1 A
1000
―
―
hFE (2)
VCE = 4 V, IC = 3 A
1000
―
―
VCE (sat) (1)
IC = 1 A, IB = 4 mA
―
0.9
1.4
VBE (sat) (2)
IC = 3 A, IB = 10 mA
―
1.3
2.0
VBE (sat)
IC = 1 A, IB = 4 mA
―
1.6
2.0
Base-emitter voltage
VBE
VCE = 4 V, IB = 3 A
―
1.8
2.5
V
Transition frequency
fT
7
―
MHz
―
44
―
pF
―
0.6
―
―
4.2
―
―
2.3
―
100
―
―
DC current gain
Saturation voltage
Collector-emitter
Base-emitter
Collector output capacitance
Cob
Turn-on time
VCE = 3 V, IC = 0.5 A
VCB = 10 V, IE = 0 A, f = 1 MHz
ton
Input
Storage time
20 µs
tstg
IB2
IB1
Switching time
―
V
µs
VCC = 30 V
IB2
Fall time
Output
IB1
10 Ω
Collector-base breakdown voltage
tf
IB1 = −IB2 = 10 mA, duty cycle ≤ 1%
ES/B
T.U.T
IC
VCC = 20 V
Refer to Figure 1
mJ
PW
L (coil)
= 10 mH
Unclamped inductive load energy
IB1
0
IB2
IB1 = 0.1 A
Clamp (C-B zener)
ICP
IB2 = −0.1 A
0
VCE
IC
Note 1: Pulse width adjusted for desired ICP (ICP = 4.48 A min)
Note 2: ES/B =
Figure 1
1
L・ICP 2
2
Measurement Circuit of Unclamped Inductive Load Energy ES/B
2
2002-11-20
MP4015
rth – tw
(°C/W)
300
Curves should be applied in thermal
rth
100
Transient thermal resistance
50
(4)
limited area (single nonrepetitive pulse)
below figure show thermal resistance per
1 unit versus pulse width.
(1)
30
10
5
-No heat sink and attached on a circuit board(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
Circuit board
(4) 4 devices operation
3
1
0.5
0.001
0.01
0.1
1
10
Pulse width
tw
100
1000
(s)
PT – Ta
Safe Operating Area
8
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Attached on a circuit board
(W)
20
PT
10 I max (pulsed)*
C
1 ms*
Total power dissipation
10 ms*
5
IC
(A)
3
1
6
4
(4)
Circuit board
(3)
(2)
2
(1)
0
0
0.5
40
80
120
160
200
Ambient temperature Ta (°C)
0.3
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.05
3
5
10
VCEO max
30
Collector-emitter voltage VCE
50
100
(V)
∆Tj – PT
160
(°C)
0.1
Junction temperature increase ∆Tj
Collector current
(3)
(2)
(1)
(2)
(3)
80
Circuit board
Attached on a circuit board
40
0
0
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
1
2
3
Total power dissipation
3
(4)
120
4
PT
5
(W)
2002-11-20
MP4015
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
4
2002-11-20
Similar pages