Infineon BSP315PL6327HTSA1 Sipmos small-signal-transistor Datasheet

BSP315P
SIPMOS  Small-Signal-Transistor
Features
Product Summary
• P-Channel
Drain source voltage
•
Drain-Source on-state resistance RDS(on)
Enhancement mode
• Avalanche rated
VDS
ID
Continuous drain current
-60
V
0.8
Ω
-1.17
A
• Logic Level
• dv/dt rated
4
Pin 1
Pin2/4
PIN 3
G
D
S
• Qualified according to AEC Q101
3
2
• Halogen­free according to IEC61249­2­21
Type
BSP315P
Package
PG-SOT223
1
VPS05163
Tape and Reel Information
Marking
Packaging
H6327: 1000 pcs/reel
BSP315P
Non dry
Maximum Ratings,at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Value
ID
Continuous drain current
A
T A = 25 °C
-1.17
T A = 70 °C
-0.94
ID puls
Pulsed drain current
Unit
-4.68
T A = 25 °C
Avalanche energy, single pulse
EAS
24
I D = -1.17 A , V DD = -25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax
EAR
0.18
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
1.8
W
-55...+150
°C
mJ
kV/µs
I S = -1.17 A, V DS = -48 V, di/dt = 200 A/µs,
T jmax = 150 °C
T A = 25 °C
Tj , Tstg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
55/150/56
ESD Class; JESD22-A114-HBM
Rev.1.7
Class 0
Page 1
2012-11-26
BSP315P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
25
Characteristics
Thermal resistance, junction - soldering point
RthJS
K/W
(Pin 4)
RthJA
SMD version, device on PCB:
K/W
@ min. footprint
-
-
115
@ 6 cm 2 cooling area 1)
-
-
70
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
-60
-
-
Gate threshold voltage, VGS = VDS
I D = -160 µA
VGS(th)
-1
-1.5
-2
Zero gate voltage drain current
IDSS
Static Characteristics
Drain- source breakdown voltage
V
VGS = 0 V, I D = -250 µA
µA
VDS = -60 V, V GS = 0 V, T j = 25 °C
-
-0.1
-1
VDS = -60 V, V GS = 0 V, T j = 125 °C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
0.8
1.4
Ω
RDS(on)
-
0.5
0.8
Ω
Gate-source leakage current
VGS = -20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = -4.5 V, I D = -0.89 A
Drain-Source on-state resistance
VGS = -10 V, I D = -1.17 A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.1.7
Page 2
2012-11-26
BSP315P
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
gfs
0.7
1.4
-
S
Ciss
-
130
160
pF
Coss
-
40
50
Crss
-
17
21
td(on)
-
24
36
tr
-
9
14
td(off)
-
32
48
tf
-
19
28
Dynamic Characteristics
Transconductance
VDS≤2*I D*RDS(on)max , ID = -0.89 A
Input capacitance
VGS = 0 V, V DS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, V DS = -25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, V DS = -25 V, f = 1 MHz
Turn-on delay time
ns
VDD = -30 V, V GS = -4.5 V, I D = -0.89 A,
RG = 18 Ω
Rise time
VDD = -30 V, V GS = -4.5 V, I D = -0.89 A,
RG = 18 Ω
Turn-off delay time
VDD = -30 V, V GS = -4.5 V, I D = -0.89 A,
RG = 18 Ω
Fall time
VDD = -30 V, V GS = -4.5 V, I D = -0.89 A,
RG = 18 Ω
Rev.1.7
Page 3
2012-11-26
BSP315P
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Qgs
-
0.7
1.1
Qgd
-
1.8
2.6
Qg
-
5.2
7.8
V(plateau)
-
-3.14
-
Dynamic Characteristics
Gate to source charge
nC
VDD = -48 V, ID = -1.17 A
Gate to drain charge
VDD = -48 V, ID = -1.17 A
Gate charge total
VDD = -48 V, ID = -1.17 A, V GS = 0 to -10 V
Gate plateau voltage
V
VDD = -48 V, ID = -1.17 A
Parameter
Symbol
Values
Unit
min.
typ.
max.
IS
-
-
-1.17
ISM
-
-
-4.68
VSD
-
-0.97
-1.3
V
trr
-
30.5
46
ns
Qrr
-
36
54
µC
Reverse Diode
Inverse diode continuous forward current
A
T A = 25 °C
Inverse diode direct current,pulsed
T A = 25 °C
Inverse diode forward voltage
VGS = 0 V, I F = -1.17 A
Reverse recovery time
VR = -30 V, IF=I S , di F/dt = 100 A/µs
Reverse recovery charge
VR = -30 V, IF=l S , diF/dt = 100 A/µs
Rev.1.7
Page 4
2012-11-26
BSP315P
Power Dissipation
Drain current
Ptot = f (TA)
ID = f(TA )
parameter :VGS ≥ −10V
BSP 315 P
BSP 315 P
-1.3
1.9
A
W
-1.1
1.6
-1.0
1.4
1.2
ID
Ptot
-0.9
-0.8
-0.7
1.0
-0.6
0.8
-0.5
0.6
-0.4
-0.3
0.4
-0.2
0.2
-0.1
0.0
0
20
40
60
80
100
120
°C
0.0
0
160
20
40
60
80
100
120
°C
TA
TA
Safe operating area
Transient thermal impedance
I D = f ( VDS )
ZthJC = f (tp )
parameter : D = 0 , T A = 25 °C
parameter : D = tp /T
-10
1
160
BSP 315 P
10 2
tp = 280.0µs
BSP 315 P
K/W
D
A
10 1
DS
(
ID
on
)
=
V
-10 0
Z thJC
DS
/I
1 ms
R
10 ms
10 0
D = 0.50
0.20
-10
-1
0.10
0.05
10 -1
0.02
single pulse
0.01
DC
-10 -2 -1
-10
-10
0
-10
1
V
-10
2
VDS
Rev.1.7
10 -2 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s 10 4
tp
Page 5
2012-11-26
BSP315P
Typ. output characteristics
Typ. drain-source-on-resistance
I D = f (VDS)
RDS(on) = f (ID )
parameter: tp = 80 µs
parameter: VGS
BSP 315 P
-2.8
BSP 315 P
2.6
Ptot = 2W
Ω
A
-2.4
VGS [V]
a
-2.5
e
d
-2.2
ID
-2.0
-1.8
-1.6
c
-1.4
-1.2
-1.0
-0.8
b
-3.0
c
-3.5
d
-4.0
e
-4.5
f
-5.0
g
-5.5
h
-6.0
i
-6.5
j
-7.0
k
-8.0
b l
-10.0
a
b
c
d
2.2
2.0
RDS(on)
li kj g f
h
1.8
1.6
1.4
1.2
1.0
0.8
e
0.6
-0.6
0.4
-0.4
a
-0.2
0.2
0.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V
0.0
0.0
-5.0
g
i h
k j
lk
j
VGS [V] =
a
b
c
d
e
f
-2.5 -3.0 -3.5 -4.0 -4.5 -5.0
-0.4
-0.8
-1.2
g
h
i
-5.5 -6.0 -6.5 -7.0
-1.6
-2.0
VDS
f
l
-8.0 -10.0
A
-2.6
ID
Typ. transfer characteristics I D= f ( V GS )
Typ. forward transconductance
VDS≥ 2 x I D x RDS(on)max
gfs = f(ID); Tj =25°C
parameter: tp = 80 µs
parameter: gfs
2.5
-3.0
A
S
ID
gfs
-2.0
1.5
-1.5
1.0
-1.0
0.5
-0.5
0.0
0.0
-1.0
-2.0
-3.0
-4.0
V
0.0
0.0
-6.0
1.0
1.5
2.0
A
3.0
ID
VGS
Rev.1.7
0.5
Page 6
2012-11-26
BSP315P
Drain-source on-resistance
Gate threshold voltage
RDS(on) = f (T j)
VGS(th) = f (Tj)
parameter:I D = -1.17 A, V GS = -10 V
parameter: VGS = VDS , ID = -160 µA
BSP 315 P
2.1
-3.0
1.8
V
Ω
V GS(th)
RDS(on)
1.6
1.4
98%
-2.0
1.2
typ
1.0
98%
-1.5
typ
-1.0
0.8
2%
0.6
0.4
-0.5
0.2
0.0
-60
-20
20
60
°C
100
0.0
-60
180
-20
20
60
100
Tj
160
°C
Tj
Typ. capacitances
Forward characteristics of reverse diode
C = f(VDS)
IF = f (VSD )
Parameter: VGS=0 V, f=1 MHz
parameter: Tj , tp = 80 µs
10
3
-10 1
pF
BSP 315 P
A
Ciss
-10 0
C
IF
10 2
Coss
Crss
10 1
-10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
0
-5
-10
-15
-20
-25
-30
V
-10 -2
0.0
-40
-0.8
-1.2
-1.6
-2.0
-2.4 V
-3.0
VSD
VDS
Rev.1.7
-0.4
Page 7
2012-11-26
BSP315P
Avalanche Energy EAS = f (Tj)
Typ. gate charge
parameter: ID = -1.17 A , V DD = -25 V
RGS = 25 Ω
VGS = f (QGate )
parameter: ID = -1.17 A pulsed
BSP 315 P
25
-16
V
mJ
VGS
E AS
-12
15
-10
-8
10
0,2 VDS max
-6
0,8 VDS max
-4
5
-2
0
25
45
65
85
105
125
0
0.0
165
°C
1.0
2.0
3.0
4.0
5.0
6.0
nC
8.0
QGate
Tj
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
BSP 315 P
-72
V(BR)DSS
V
-68
-66
-64
-62
-60
-58
-56
-54
-60
-20
20
60
100
°C
180
Tj
Rev.1.7
Page 8
2012-11-26
BSP315P
Rev.1.7
Page 9
2012-11-26
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Infineon:
BSP315P L6327
Similar pages