SAVANTIC BU508DX Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
BU508DX
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
IC
Collector current (DC)
8
A
ICP
Collector current (Pulse)
15
A
IB
Base current (DC)
4
A
IBM
Base current (Pulse)
6
A
Ptot
Total power dissipation
45
W
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
SavantIC Semiconductor
Product Specification
BU508DX
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
VCE(sat)
Collector-emitter saturation voltage
IC=4.5A ;IB=1.6A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=4.5A ;IB=1.6A
1.3
V
ICES
Collector cut-off current
VCE=1500V, VBE=0
Tj=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=5.0V; IC=0
300
mA
hFE
DC current gain
IC=0.5A ; VCE=5V
VF
Diode forward voltage
IF=4.5A
fT
Transition frequency
IE=0.1A ; VCE=5V
COB
Output capacitance
VCB=10V;IE=0;f=1.0MHz
700
UNIT
V
10
30
1.6
2
MAX
2.0
V
7
MHz
125
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BU508DX
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