MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE TM55DZ/CZ-24,-2H • IT (AV) • VRRM • • • • Average on-state current ............ 55A Repetitive peak reverse voltage ........ 1200/1600V VDRM Repetitive peak off-state voltage ........ 1200/1600V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 2–φ6.5 K2 G2 13 26 (DZ) K2 G 2 K1 G1 23 A1K2 K1 3–M5 A2 CR2 Tab # 110, t=0.5 K1 G 1 (CZ) LABEL 30 9 K2 G 2 21 23 6.5 16.5 CR1 A1 CR1 K 1K 2 A2 CR2 K1 G1 Feb.1999 MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol 24 2H Unit VRRM Repetitive peak reverse voltage 1200 1600 V VRSM Non-repetitive peak reverse voltage 1350 1700 V VR (DC) DC reverse voltage 960 1280 V VDRM Repetitive peak off-state voltage 1200 1600 V VDSM Non-repetitive peak off-state voltage 1350 1700 V VD (DC) DC off-state voltage 960 1280 V Parameter Symbol Conditions Ratings Unit 86 A 55 A IT (RMS) RMS on-state current IT (AV) Average on-state current Single-phase, half-wave 180° conduction, TC=81°C ITSM Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value 1100 A I2t I2t for fusing Value for one cycle of surge current 5.0 × 103 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C 100 A/µs PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature –40~+125 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Charged part to case Main terminal screw M5 — Mounting torque Mounting screw M6 — Typical value Weight 2500 V 1.47~1.96 N·m 15~20 kg·cm 1.96~2.94 N·m 20~30 kg·cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, VRRM applied — — 10 mA IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 10 mA VTM On-state voltage Tj=125°C, ITM=165A, instantaneous meas. — — 1.5 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 500 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, RL=2Ω — — 2.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.25 — — V IGT Gate trigger current Tj=25°C, VD=6V, RL=2Ω 15 — 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) — — 0.5 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) — — 0.2 °C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 — — MΩ — Feb.1999 MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES 10 3 7 5 3 2 RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT 1200 Tj=125°C SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 1000 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 800 600 400 200 2 3 1 ON-STATE VOLTAGE (V) VFGM=10V 7 5 VGT=2.0V PG(AV)= 3 0.50W 2 IGT= 0 10 100mA 7 5 Tj=25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 80 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 TIME (s) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 130 180° 120° 60° 50 θ 360° θ=30° 40 RESISTIVE, INDUCTIVE LOAD 30 20 10 20 30 40 θ 360° 110 RESISTIVE, INDUCTIVE LOAD 100 90 80 70 θ=30° 60° 90° 120° 180° 30 60 60 PER SINGLE ELEMENT 10 PER SINGLE ELEMENT 120 90° 60 0 50 70100 GATE CURRENT (mA) 70 0 20 30 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 CASE TEMPERATURE (°C) AVERAGE ON-STATE POWER DISSIPATION (W) PGM=5.0W IFGM=2.0A GATE VOLTAGE (V) 10 1 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE CHARACTERISTICS 4 3 2 5 7 10 CONDUCTION TIME (CYCLES AT 60Hz) 50 60 70 AVERAGE ON-STATE CURRENT (A) 80 50 0 10 20 40 50 70 80 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) 270° DC 180° 120° 90° 60 60° θ=30° 40 RESISTIVE, INDUCTIVE LOAD 0 160 140 120 100 80 20 40 60 80 RESISTIVE, INDUCTIVE LOAD 90 80 70 120° θ=30° 60° 90° 180° 270° DC 0 60 80 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE AC) θ=180° θ 120° θ 90° 360° 60° RESISTIVE, INDUCTIVE LOAD 30° LIMITING VALUE OF THE RMS ON-STATE CURRENT (SINGLE PHASE FULLWAVE AC) PER SINGLE MODULE 20 40 60 130 θ=30° 60° 90° 120° 180° 110 100 90 θ 80 θ 70 360° 60 RESISTIVE, INDUCTIVE LOAD 50 80 100 120 140 160 0 180° 120 100 θ=30° θ θ 360° RESISTIVE, INDUCTIVE LOAD 80 60 40 100 90 50 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER TWO MODULES) RESISTIVE, INDUCTIVE LOAD 70 0 60 θ θ 360° 80 60 40 80 100 120 140 160 110 20 20 60 120 CASE TEMPERATURE (°C) (PER SINGLE MODULE) 90° 60° 40 LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 120° 140 20 RMS ON-STATE CURRENT (A) MAXIMUM ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) 160 100 PER SINGLE MODULE 120 RMS ON-STATE CURRENT (A) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) 40 AVERAGE ON-STATE CURRENT (A) 20 0 20 AVERAGE ON-STATE CURRENT (A) 40 0 100 50 100 60 0 θ 360° 110 60 PER SINGLE ELEMENT 0 AVERAGE ON-STATE POWER DISSIPATION (W) θ 360° 20 PER SINGLE ELEMENT 120 CASE TEMPERATURE (°C) 80 130 CASE TEMPERATURE (°C) AVERAGE ON-STATE POWER DISSIPATION (W) 100 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) θ=30° 60° 90° 120° 180° 0 20 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER TWO MODULES) Feb.1999 MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) 130 160 120° 140 90° 120 60° 100 θ=30° 80 60 θ 360° 40 RESISTIVE, INDUCTIVE LOAD 20 0 0 20 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER THREE MODULES) 120 CASE TEMPERATURE (°C) (PER SINGLE MODULE) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) MAXIMUM ON-STATE POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) θ 360° RESISTIVE, INDUCTIVE LOAD 110 100 90 θ=30° 80 60° 90° 120° 70 60 50 0 20 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999