Renesas CR8CM-12A-A8 600v - 8a - thyristor medium power use Datasheet

Preliminary Datasheet
CR8CM-12A
R07DS1034EJ0300
Rev.3.00
Jul 30, 2013
600V - 8A - Thyristor
Medium Power Use
Features
• IT (AV) : 8 A
• VDRM : 600 V
• IGT : 15 mA
• Non-Insulated Type
• Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
RENESAS Package code: PRSS0004AA-A
A
(Package name: TO-220)
4
4
2, 4
3
1
2
12
3
1
1.
2.
3.
4.
Cathode
Anode
Gate
Anode
3
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
R07DS1034EJ0300 Rev.3.00
Jul 30, 2013
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
Page 1 of 7
CR8CM-12A
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Preliminary
Symbol
IT (RMS)
IT (AV)
Ratings
12.6
8
Unit
A
A
ITSM
120
A
I2t
72
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
5
0.5
6
10
2
– 40 to +125
– 40 to +125
2.1
W
W
V
V
A
°C
°C
g
Conditions
Commercial frequency, sine half wave
Note1
180° conduction, Tc = 99°C
50 Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 50 Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak reverse current
Symbol
IRRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
Test conditions
Tj = 125°C, VRRM applied
Repetitive peak off-state current
On-state voltage
IDRM
VTM
—
—
—
—
2.0
1.4
mA
V
Tj = 125°C, VDRM applied
Gate trigger voltage
VGT
—
—
1.0
V
Tc = 25°C, ITM = 25 A,
instantaneous value
Tj = 25°C, VD = 6 V, IT = 1 A
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
VGD
0.2
—
—
V
Tj = 125°C, VD = 1/2 VDRM
IGT
IH
Rth (j-c)
—
—
—
—
15
—
15
—
2.0
mA
mA
°C/W
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 25°C, VD = 12 V
Junction to caseNote1 Note2
Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case.
2. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
R07DS1034EJ0300 Rev.3.00
Jul 30, 2013
Page 2 of 7
CR8CM-12A
Preliminary
Performance Curves
Rated Surge On-State Current
103
7
5
3
2
Surge On-State Current (A)
102
7
5
3
2
101
7
5
3
2
101
7
5
3
2
100
7
5
3
2
1
2
3
4
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
160
140
120
100
80
60
40
20
2 3 4 5 7 101
2 3 4 5 7 102
Conduction Time (Cycles at 50Hz)
Gate Characteristics
Gate Trigger Current vs.
Junction Temperature
VFGM = 6V
VGT = 1V
PGM = 5W
PG(AV)
= 0.5W
IGT = 15mA
× 100 (%)
On-State Voltage (V)
VGD = 0.2V
IFGM = 2A
10–1
5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5
Gate Trigger Voltage (Tj = t°C)
180
0
100
5
Gate Trigger Current (Tj = 25°C)
102
7
5
3
2
0
Gate Trigger Current (Tj = t°C)
100
Gate Voltage (V)
200
Tc = 125°C
103
7
5
3
2
Typical Example
102
7
5
3
2
101
7
5
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
7
5
3
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
R07DS1034EJ0300 Rev.3.00
Jul 30, 2013
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102
101
100
10–1 –3
10
10–2
10–1
100
101
Time (s)
Page 3 of 7
CR8CM-12A
Preliminary
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
Case Temperature (°C)
16
180°
14
12
120°
90°
θ = 30°
60°
10
8
6
θ
4
360°
2
4
6
8
10
14
12
θ
120
360°
80
180°
60
120°
90°
40
0
0
16
Resistive,
inductive loads
100
60°
θ = 30°
2
4
6
8
10
14
12
16
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
20
160
18
140
16
180°
14
θ = 30°
12
120°
90°
60°
10
8
6
θ
4
θ
360°
2
0
0
Resistive
loads
2
4
6
8
10
12
80
180°
60
120°
90°
40
0
0
16
θ
100
60°
20
14
θ
360°
120
θ = 30°
Resistive loads
2
4
6
8
10 12
14
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Allowable Case Temperature vs.
Average On-State Current
(Rectangular Wave)
20
16
DC
60°
12
270°
θ = 30°
10
8
6
θ
4
360°
2
4
6
8
10
12
14
Average On-State Current (A)
R07DS1034EJ0300 Rev.3.00
Jul 30, 2013
16
θ
360°
120
100
80
60
40
20
Resistive,
inductive loads
2
Resistive,
inductive loads
140
90° 120°
14
0
0
16
160
180°
18
Case Temperature (°C)
Average Power Dissipation (W)
140
20
Resistive,
inductive loads
2
0
0
Average Power Dissipation (W)
160
18
Case Temperature (°C)
Average Power Dissipation (W)
20
0
0
180° 270°
60°
DC
θ = 30° 90° 120°
2
4
6
8
10
12
14
16
Average On-State Current (A)
Page 4 of 7
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
Breakover Voltage (dv/dt = vV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Tj = 125°C
Typical Example
140
120
100
80
60
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Holding Current vs.
Junction Temperature
Turn-Off Time vs.
Junction Temperature
103
7
5
80
Turn-Off Time (μs)
Typical Example
3
2
102
7
5
3
2
IT = 8A,
70 – di/dt = 5A/μs,
VD = 300V,
60 dv/dt = 20V/μs,
VR = 50V
50
40
30
Typical Example
20
Distribution
10
101
–60 –40 –20 0 20 40 60 80 100 120 140
0
0
20
40
60
80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Gate Trigger Current vs.
Gate Current Pulse Width
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
R07DS1034EJ0300 Rev.3.00
Jul 30, 2013
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Repetitive Peak Reverse Voltage (Tj = t°C)
× 100 (%)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
CR8CM-12A
103
Typical Example
7
5
3
2
102
7
5
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Gate Current Pulse Width (μs)
Page 5 of 7
CR8CM-12A
Preliminary
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AG-A
Previous Code
TO-220ABS
MASS[Typ.]
2.1g
Unit: mm
4.5 ± 0.2
2.8 ± 0.1
Package Name
TO-220AB
9.9 ± 0.2
+ 0.10
φ3.6 ± 0.2
13.08 ± 0.20
(3.00)
9.2 ± 0.2
15.7 ± 0.2
1.30 – 0.05
1.62 Max
0.80 ± 0.10
2.6 Max
2.54
2.54
+ 0.10
0.50 – 0.05
10.0 ± 0.2
Package Name
TO-220
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AA-A
Previous Code
⎯
MASS[Typ.]
2.0g
10.5Max
Unit: mm
4.5
φ3.6
3.8Max
12.5Min
16Max
7.0
3.2
1.3
1.0
0.8
0.5
2.54
2.6
4.5Max
2.54
2
R07DS1034EJ0300 Rev.3.00
Jul 30, 2013
Page 6 of 7
CR8CM-12A
Preliminary
Ordering Information
Orderable Part Number
CR8CM-12A#BB0
CR8CM-12A-A8#BB0
Note:
Packing
Tube
Tube
Quantity
50 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Please confirm the specification about the shipping in detail.
R07DS1034EJ0300 Rev.3.00
Jul 30, 2013
Page 7 of 7
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