Seme LAB D1027UK Metal gate rf silicon fet Datasheet

TetraFET
D1027UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
C
(2 pls)
2
G
(typ)
3
1
H
P
(2 pls) A
D
4
5
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 28V – 175MHz
PUSH–PULL
E
(4 pls)
F
I
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
N
O
M
J
K
• SUITABLE FOR BROAD BAND APPLICATIONS
DR
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
Millimetres
19.05
10.77
45°
9.78
5.71
27.94
1.52R
10.16
22.22
0.13
2.72
1.70
5.08
34.03
1.57R
PIN 2
PIN 4
DRAIN 1
GATE 2
• LOW Crss
• SIMPLE BIAS CIRCUITS
Tol.
0.50
0.13
5°
0.13
0.13
0.13
0.13
0.13
MAX
0.02
0.13
0.13
0.50
0.13
0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
5°
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
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E-mail: [email protected]
Website: http://www.semelab.co.uk
438W
70V
±20V
30A
–65 to 150°C
200°C
Prelim. 2/00
D1027UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
PER SIDE
BVDSS
IDSS
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
ID = 100mA
VDS = 28V
VGS = 0
6
mA
1
mA
7
V
IGSS
Gate Leakage Current
VGS = 20V
VDS = 0
VGS(th)
Gate Threshold Voltage*
ID = 10mA
VDS = VGS
gfs
Forward Transconductance*
VDS = 10V
ID = 6A
ID = 10mA
VDS = VGS
VGS(th)match
Gate Threshold Voltage
Matching Between Sides
V
VGS = 0
70
1
mhos
4.8
0.1
V
TOTAL DEVICE
Common Source Power Gain
h
PO = 150W
Drain Efficiency
VDS = 28V
VSWR
Load Mismatch Tolerance
f = 175MHz
GPS
IDQ = 2.4A
13
dB
50
%
20:1
—
PER SIDE
Ciss
Input Capacitance
VDS = 28V
VGS = –5V f = 1MHz
360
pF
Coss
Output Capacitance
VDS = 28V
VGS = 0
f = 1MHz
180
pF
Crss
Reverse Transfer Capacitance VDS = 28V
VGS = 0
f = 1MHz
15
pF
* Pulse Test:
Pulse Duration = 300 ms , Duty Cycle £ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
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E-mail: [email protected]
Website: http://www.semelab.co.uk
Max. 0.4°C / W
Prelim. 2/00
D1027UK
400
100
400
350
90
350
300
80
300
250
70
200
60
P out
f = 175MHz
100
18
Vds = 28V
P out
Gain
200
%
150
f = 175MHz
Idq = 2A
250
Drain Efficiency
W
20
16
dB
W
50
150
40
100
30
50
20
20
0
14
Idq = 2A
50
Vds = 28V
0
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
14
16
12
20
18
P in W
P in W
2nd harmonic = -28dBc
Pout
Drain Efficiency
Pout
Gain
Figure 1 – Power Output and Efficiency
vs. Power Input.
3rd harmonic = -40dBc
output at 350W
Figure 2 – Power Output & Gain
vs. Power Input.
-20
-20
18.5
-30
17.5
-30
IMD
IMD
-40
Gain
dBc
dBc
dB
-40
16.5
-50
-50
-60
20
40
60
80
100
Pout W PEP
IMD3 at Idq=1.5A
IMD3 at Idq=2.5A
120
140
160
180
0
0.5
1
1.5
Idq A
f1 = 175.0 MHz
IMD3
IMD5
Gain
f2 = 175.1 MHz
VDS = 28V
15.5
2.5
2
f1 = 175.0MHz
f2 = 175.1MHz
Pout = 130W PEP
Vds = 28V
Figure 3 – IMD vs. Output Power.
Semelab plc.
Figure 4 – IMD & Gain vs. Idq
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 2/00
D1027UK
110
100
90
80
70
60
0
12
50
30
15
0
40
14
0
0
13
10
5
2
1
0.5
180
0
0
0.2
10
170
20
160
0
50
2
1
0.5
0.2
180
ZLopt
-30
0
-15
-20
-160
225
-10
-170
175
-4
0
40
-1
Impedance measured Drain - Drain
0
-5
-1
30
-80
-90
-100
-110
-12
0
Semelab plc.
jX
-0.5
-4
-5
-70
ZL
R
4
4.5
3.5
-60
f
MHz
175
200
225
Matching
Network
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E-mail: [email protected]
Website: http://www.semelab.co.uk
Z Lopt
Prelim. 2/00
D1027UK
110
100
90
80
70
60
0
12
50
30
15
0
40
14
0
0
13
10
5
2
1
0.5
180
200
225
ZSopt
-60
-70
-80
-90
-100
-110
-12
0
Semelab plc.
-1
30
ZS opt
-4
0
40
-1
Impedance measured Gate - Gate
0
-5
Matching
Network
-30
0
-15
-20
-160
-10
-170
0
0
175
0.2
10
170
20
160
0
50
2
1
0.5
0.2
180
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
f
MHz
175
200
225
Zs
R
1.6
1.6
2.3
jX
-1.5
-1.2
-2
Prelim. 2/00
D1027UK
L 2
1 0 k
G a te - B ia s
1 0 0 n
1 n
T 2
2 8 V
1 0 0 n
1 2
1
1 0 0 k
1 0 0 0 u
L 1
1 n
8 2 0 K
T 4
D 1 0 2 7 U K
6 8 0 p F
T 6
1 u
T 1
9 0 p F
2 -1 8 p F
4 7 p F
2 -1 8 p F
6 8 0 p F
1 u
T 5
T 3
D 1 0 2 7 U K
D1027UK 175MHz TEST FIXTURE
T1,2,3
T4,5
T6
L1
L2
Semelab plc.
7cm Storm Products EXE18 19/30 S1TW coaxial cable on Siemens
A1 x 1 2-hole core.
14cm Storm Products EXE18 19/30 S1TW coaxial cable.
11cm Storm Products EXE18 19/30 S1TW coaxial cable
6 turns 1.2mm dia wire, 5mm internal diameter
1.5 turns 0.9mm dia wire on Siemens A1 x 1 2 hole core
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 2/00
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