FGA70N33BTD tm 330V, 70A PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) =1.7V @ IC = 70A • High input impedance • Fast switching • RoHS Compliant Applications • PDP System C G TO-3P E G C E Absolute Maximum Ratings T C Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage ICpulse(1)* Pulsed Collector Current IC pulse(2)* Pulsed Collector Current PD VRRM = 25°C unless otherwise noted Ratings Units 330 V ± 30 V @ TC = 25 C 160 A @ TC = 25oC 220 A 149 W 60 W 330 V o o Maximum Power Dissipation @ TC = 25 C Maximum Power Dissipation o @ TC = 100 C Peak Repetitive Reverse Voltage of Diode o IF(AV) Average Rectified Forward Current of diode @ TC = 100 C 10 A IFSM Non-repetitive Peak Surge Current of diode 60Hz Single Half-Sine wave 100 A TJ, Tstg Operating Junction Temperature and Storage Temperrature -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case -- 0.84 o C/W RθJC(Diode) Thermal Resistance, Junction to Case -- 1.57 o C/W 40 o C/W RθJA Thermal Resistance, Junction to Ambient -- Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D< 0.01, pluse width < 5usec *IC_pulse limited by max Tj ©2008 Fairchild Semiconductor Corporation FGA70N33BTD Rev. A 1 www.fairchildsemi.com FGA70N33BTD 330V, 70A PDP IGBT November 2008 Device Marking Device Package Packaging Type FGA70N33BTD FGA70N33BTDTU TO-3P Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 30ea -- TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 330 -- -- V -- 0.3 -- V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±400 nA IC = 250µA, VCE = VGE 2.3 3.3 4.3 V -- 1.1 -- V -- 1.4 -- V -- 1.7 -- V IC = 70A, VGE = 15V, TC = 125oC -- 1.8 -- V -- 1380 -- pF VCE = 30V, VGE = 0V, f = 1MHz -- 140 -- pF -- 60 -- pF -- 13 -- ns VGE = 0V, IC = 250uA On Characteristics VGE(th) G-E Threshold Voltage IC = 20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V, IC = 70A, VGE = 15V, TC = 25oC Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf td(on) VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 25oC -- 26 -- ns -- 46 -- ns Fall Time -- 198 -- ns Turn-On Delay Time -- 13 -- ns tr Rise Time td(off) Turn-Off Delay Time tf Qg Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC -- 28 -- ns -- 48 -- ns Fall Time -- 268 -- ns Total Gate Charge -- 49 -- nC -- 6.8 -- nC -- 17.5 -- nC FGA70N33BTD Rev. A VCE = 200V, IC = 20A, VGE = 15V 2 www.fairchildsemi.com FGA70N33BTD 330V, 70A PDP IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr TC = 25°C unless otherwise noted Test Conditions IF = 10A Min. Typ. Max TC = 25oC -- 1.1 1.5 TC = 125oC -- 0.95 -- TC = 25oC -- 23 -- -- 36 -- -- 2.8 -- -- 5.1 -- TC = IF =10A, dI/dt = 200A/µs FGA70N33BTD Rev. A TC = 25oC TC = Diode Reverse Recovery Charge 3 125oC 125oC TC = 25oC -- 32 -- TC = 125oC -- 91 -- Units V ns A nC www.fairchildsemi.com FGA70N33BTD 330V, 70A PDP IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 220 Figure 2. Typical Output Characteristics 220 o TC = 25 C 20V o TC = 125 C 12V 20V 176 Collector Current, IC [A] Collector Current, IC [A] 15V 10V 132 88 8V 44 176 15V 132 12V 88 44 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 Figure 3. Typical Saturation Voltage Characteristics 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 4. Transfer Characteristics 220 220 Common Emitter Vce = 20V o Tc=25 C o Tc=125 C Common Emitter VGE = 15V 176 o 176 TC = 25 C Collector Current, Ic [A] Collector Current, IC [A] 8V 0 0 o TC = 125 C 132 88 44 132 88 44 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 1.8 70A 1.6 1.4 40A 1.2 0.8 25 4 6 8 10 Gate-Emitter Voltage, Vge [V] 20 Common Emitter VGE = 15V 1.0 2 12 14 16 Figure 6. Saturation Voltage vs. VGE 2.0 Collector-Emitter Voltage, VCE [V] 10V IC = 20A Common Emitter o TC = 25 C 16 12 8 40A 70A 4 IC = 20A 0 50 75 100 125 150 o Collector-EmitterCase Temperature, TC [ C] FGA70N33BTD Rev. A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA70N33BTD 330V, 70A PDP IGBT Typical Performance Characteristics FGA70N33BTD 330V, 70A PDP IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 20 10000 Common Emitter Common Emitter VGE = 0V, f = 1MHz TC = 125 C Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o 12 8 o TC = 25 C 1000 Coes Cres 100 40A 4 70A IC = 20A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 10 20 1 Figure 9. Gate charge Characteristics 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 15 500 Common Emitter 10µs TC = 25 C 100 12 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o VCC = 100V 9 200V 6 3 0 0 10 20 30 40 Gate Charge, Qg [nC] 50 100µs 10 1ms 10ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 0.01 0.1 60 Figure 11. Turn-on Characteristics vs. Gate Resistance 1 10 100 Collector-Emitter Voltage, VCE [V] 400 Figure 12. Turn-off Characteristics vs. Gate Resistance 200 1000 100 tf Switching Time [ns] Switching Time [ns] tr td(on) 10 Common Emitter VCC = 200V, VGE = 15V IC = 20A td(off) 100 Common Emitter VCC = 200V, VGE = 15V IC = 20A o TC = 25 C o TC = 25 C o TC = 125 C o TC = 125 C 1 0 FGA70N33BTD Rev. A 15 30 45 Gate Resistance, RG [Ω ] 10 60 5 0 15 30 45 Gate Resistance, RG [Ω] 60 www.fairchildsemi.com Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 1000 1000 Common Emitter VGE = 15V, RG = 5Ω tf o TC = 25 C Switching Time [ns] Switching Time [ns] tr o TC = 125 C 100 10 td(on) 100 td(off) 10 Common Emitter VGE = 15V, RG = 5Ω o TC = 25 C o TC = 125 C 1 20 30 40 50 60 1 20 70 30 Figure 15. Switching Loss vs. Gate Resistance 60 70 3000 Eoff Eon Common Emitter VCC = 200V, VGE = 15V 10 Eoff 1000 Switching Loss [mJ] 100 IC = 20A Eon 100 Common Emitter VGE = 15V, RG = 5Ω 10 o o TC = 25 C TC = 25 C o o TC = 125 C TC = 125 C 1 50 Figure 16. Switching Loss vs. Collector Current 1000 Switching Loss [mJ] 40 Collector Current, IC [A] Collector Current, IC [A] 0 10 20 30 40 Gate Resistance, RG [Ω] 1 20 50 30 40 50 60 70 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 100 100 o Forward Current, IF [A] Collector Current, IC [A] 400 10 TC = 125 C 10 o TC = 25 C o TC = 25 C Safe Operating Area o o VGE = 15V, TC = 125 C TC = 125 C 1 1 10 100 1 600 0 Collector-Emitter Voltage, VCE [V] FGA70N33BTD Rev. A 6 0.5 1.0 1.5 2.0 Forward Voltage, VF [V] 2.5 www.fairchildsemi.com FGA70N33BTD 330V, 70A PDP IGBT Typical Performance Characteristics FGA70N33BTD 330V, 70A PDP IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge 60 Stored Recovery Charge, Qrr [nC] Reverse Recovery Currnet, Irr [A] 4 200A/µs 3 2 di/dt = 100A/µs 1 0 5 10 20 30 Forward Current, IF [A] 45 200A/µs 30 di/dt = 100A/µs 15 0 40 10 5 20 30 40 Forward Current, IF [A] Figure 21. Reverse Recovery Time Reverse Recovery Time, trr [ns] 40 30 200A/µs di/dt = 100A/µs 20 10 5 10 20 30 40 Forward Current, IF [A] Figure 22.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 single pulse t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGA70N33BTD Rev. A 7 www.fairchildsemi.com FGA70N33BTD 330V, 70A PDP IGBT Mechanical Dimensions TO-3P Dimensions in Millimeters FGA70N33BTD Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FGA70N33BTD Rev. A 9 www.fairchildsemi.com FGA70N33BTD 330V, 70A PDP IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.