ASB ASX621 250 ~ 3000 mhz mmic amplifier Datasheet

ASX621
250 ~ 3000 MHz MMIC Amplifier
Description
Features
 18 dB Gain at 2000 MHz
 32.5 dBm P1dB at 2000 MHz
 49 dBm Output IP3 at 2000 MHz
 MTTF > 100 Years
 Two Power Supplies
The ASX621, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication
systems up to 3 GHz. The amplifier is available in
a SOIC8 package and passes through the stringent DC, RF, and reliability tests.
ASX621
Package Style: SOIC8
Typical Performance
(Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Frequency
MHz
900
2000
2450
900
2000
2450
2700
Gain
dB
30.0
18.0
13.0
30.0
18.0
13.0
16.0
 CDMA
S11
dB
-17.0
-14.0
-9.0
-17.0
-14.0
-9.0
-12.0
 GSM
S22
dB
-7.5
-14.0
-10.0
-7.5
-14.0
-10.0
-15.0
Output IP31)
dBm
45
47
46
48
49
48
48
Noise Figure
dB
11.0
5.5
6.8
11.5
5.6
7.0
5.9
Output P1dB
dBm
32.0
31.5
32.0
33.0
32.5
33.0
33.0
Current
mA
930
1150
Device Voltage
V
+4.6
+5
Application Circuit
 WCDMA
 WLAN
 LTE (2620 ~ 2690 MHz)
 WiMAX
 Others (1200 ~ 1400 MHz)
1) OIP3 measured with two tones at an output power of +14 dBm/tone separated by 1 MHz.
Product Specifications
Parameters
Units
Testing Frequency
MHz
Min
Typ
Gain
dB
S11
dB
S22
dB
Output IP3
dBm
Noise Figure
dB
Output P1dB
dBm
31.5
32.5
Current
mA
1050
1150
Device Voltage
V
Max
2000
17.0
18.0
-14
-14
47
49
5.6
6.0
1250
+5
Pin Configuration
Absolute Maximum Ratings
Parameters
Rating
Pin No.
Function
Operating Case Temperature
-40 to 85 C
1
2nd stage RF IN
Storage Temperature
-40 to 150 C
Device Voltage
+6 V
2
1st stage RF OUT
Operating Junction Temperature
+150 C
3,5,8
GND
1st stage RF IN
2nd stage RF OUT
Input RF Power (CW, 50  matched)1)
+25 dBm
4
Thermal Resistance
10 C/W
6,7
1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/12
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX621
250 ~ 3000 MHz MMIC Amplifier
Outline Drawing
Part No.
Symbols
ASX621
●
A
A1
A2
B
C
D
D2
E
E1
E2
e
L
y

|L1-L1’|
L1
Pin No.
1
2
3
4
Dimensions (In mm)
MIN
NOM
1.40
1.50
0.00
----1.45
0.33
--0.19
--4.80
--3.20
3.30
5.80
6.00
3.80
3.90
2.30
2.40
--1.27
0.40
--------0
----1.04REF
Function
2nd stage RF IN
1st stage RF OUT
GND
1st stage RF IN
Pin No.
5
6
7
8
MAX
1.60
0.10
--0.51
0.25
5.00
3.40
6.20
4.00
2.50
--1.27
0.10
8
0.12
Function.
GND
2nd stage RF OUT
2nd stage RF OUT
GND
Note: 1. Backside metal paddle is RF and DC ground.
Mounting Recommendation (In mm)
Note: 1. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
2. To ensure reliable operation, device ground paddle-to-ground
pad soldering is critical.
3. Add mounting screws near the part to fasten the board to a heat
sinker. Ensure that the ground / thermal via region contacts the
heat sinker.
4. A proper heat dissipation path underneath the area of the PCB
for the mounted device is strictly required for proper thermal operation. Damage to the device can result from inappropriate heat
dissipation.
ESD Classification
HBM
Class 1B
Voltage Level: 500 V ~ 1000 V
MM
Class A
Voltage Level: < 200 V
CAUTION: ESD-sensitive device!
Moisture Sensitivity Level (MSL)
Level 3 at 260 C reflow
2/12
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX621
250 ~ 3000 MHz MMIC Amplifier
APPLICATION CIRCUIT
CDMA Rx
Frequency (MHz)
824 ~ 849
Magnitude S21 (dB)
28.0
Magnitude S11 (dB)
-14
Magnitude S22 (dB)
-8
Output P1dB (dBm)
32.5
824 ~ 849 MHz
Output IP31) (dBm)
47
+5 V
Noise Figure (dB)
11.0
Device Voltage (V)
+5
Current (mA)
1150
1) OIP3 is measured with two tones at an output power of +15 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C7=1 F
*C4 shall be placed as close as
possible to the pin.
C9=1 F
C8=100pF
L1=56 nH
(Coil Inductor)
C5=15 pF
C4=27 pF
C2=100 pF RF OUT
ASX621
L2=56 nH
(Coil Inductor)
RF IN
C6=100pF
7 mm
R1=15 
C3=7.5 pF
C1=2.2 pF
35
0
30
-5
25
-10
S11 (dB)
Gain (dB)
S-parameters
20
15
10
600
-15
-20
700
800
900
1000
1100
1200
-25
600
700
800
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-20
-25
600
1000
1100
1200
3
2
1
700
800
900
1000
1100
1200
0
0
500
Frequency (MHz)
3/12
900
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX621
250 ~ 3000 MHz MMIC Amplifier
APPLICATION CIRCUIT
CDMA Tx, GSM
Frequency (MHz)
869
960
Magnitude S21 (dB)
31.0
26.0
Magnitude S11 (dB)
-13.0
-18.0
Magnitude S22 (dB)
-8.0
-7.5
Output P1dB (dBm)
32.5
32.5
869 ~ 960 MHz
Output IP31) (dBm)
47
48
+5 V
Noise Figure (dB)
11.0
11.0
Device Voltage (V)
+5
+5
Current (mA)
1150
1150
1) OIP3 is measured with two tones at an output power of +15
dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C7=1 F
*C4 shall be placed as close as
possible to the pin.
C9=1 F
C8=100pF
C6=100pF
L1=56 nH
(Coil Inductor)
C5=9 pF
C4=12 pF
C2=100 pF
RF IN
RF OUT
ASX621
L2=56 nH
(Coil Inductor)
6.5 mm
R1=15 
C3=7.5 pF
C1=2 pF
35
0
30
-5
25
-10
S11 (dB)
Gain (dB)
S-parameters
20
15
10
600
-15
-20
700
800
900
1000
1100
1200
-25
600
700
800
Frequency (MHz)
900
1000
1100
1200
Frequency (MHz)
5
5
4
Stability Factor
S22 (dB)
0
-5
3
2
-10
1
-15
600
700
800
900
1000
1100
1200
0
0
500
Frequency (MHz)
4/12
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX621
250 ~ 3000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WCDMA Rx
Frequency (MHz)
1920 ~ 1980
Magnitude S21 (dB)
18.0
Magnitude S11 (dB)
-14
Magnitude S22 (dB)
-14
Output P1dB (dBm)
32.5
1920 ~ 1980 MHz
Output IP31) (dBm)
50
+5 V
Noise Figure (dB)
5.6
Device Voltage (V)
+5
Current (mA)
1150
1) OIP3 is measured with two tones at an output power of +14
dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C5=1 F
*C3 shall be placed as close as
possible to the pin.
C7=1 F
C6=100pF
C4=100pF
L2=27 nH
(Coil Inductor)
L1=27 nH C3=2.2 pF
(Coil Inductor)
C2=1.5 pF
ASX621
RF IN
3 mm
RF OUT
L3=1.8 nH
C1=2 pF
S-parameters
25
0
-5
20
-10
10
o
-40 c
o
25 c
o
85 c
5
0
1700
S11 (dB)
Gain (dB)
15
-15
-20
o
-40 c
o
25 c
o
85 c
-25
1800
1900
2000
2100
-30
1700
2200
1800
1900
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
o
-40 c
o
25 c
o
85 c
-20
-25
1700
1800
1900
2000
2100
2200
2100
3
2
1
2200
0
500
Frequency (MHz)
5/12
2000
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX621
250 ~ 3000 MHz MMIC Amplifier
Gain vs. Temperature
Current vs. Temperature
1400
28
1300
24
20
Gain (dB)
Current (mA)
1200
1100
16
1000
800
-60
Frequency = 1950 MHz
12
900
-40
-20
0
20
40
60
80
8
-60
100
-40
-20
0
o
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
Output IP3 vs. Tone Power (Frequency = 1950 MHz)
P1dB vs. Temperature
MHz) 80
38
70
36
60
Output IP3 (dBm)
P1dB (dBm)
34
32
30
40
30
o
-40 c
o
25 c
o
85 c
20
Frequency = 1950 MHz
28
26
-60
50
10
-40
-20
0
20
40
60
80
100
0
12
13
14
Temperature ( C)
6/12
15
16
17
18
19
20
21
22
23
24
25
26
Pout per Tone (dBm)
o
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX621
250 ~ 3000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WCDMA Tx
Frequency (MHz)
2110 ~ 2170
Magnitude S21 (dB)
17.0
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-13
Output P1dB (dBm)
32.5
2110 ~ 2170 MHz
Output IP31) (dBm)
50
+5 V
Noise Figure (dB)
5.6
Device Voltage (V)
+5
Current (mA)
1150
1) OIP3 is measured with two tones at an output power of +14
dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C5=1 F
*C3 shall be placed as close as
possible to the pin.
C7=1 F
C6=100pF
C4=100pF
L2=27 nH
(Coil Inductor)
L1=27 nH C3=1.8 pF
(Coil Inductor)
C2=1.2 pF
ASX621
RF IN
3 mm
RF OUT
L3=1.8 nH
C1=1.8 pF
S-parameters
25
0
-5
20
-10
S11 (dB)
Gain (dB)
15
10
-15
-20
5
0
1900
-25
2000
2100
2200
2300
2400
-30
1900
2000
2100
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-20
-25
1900
2300
2400
3
2
1
2000
2100
2200
2300
2400
0
0
500
Frequency (MHz)
7/12
2200
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX621
250 ~ 3000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WLAN
Frequency (MHz)
2400 ~ 2500
Magnitude S21 (dB)
13.0
Magnitude S11 (dB)
-9
Magnitude S22 (dB)
-10
Output P1dB (dBm)
33
2400 ~ 2500 MHz
Output IP31) (dBm)
48
+5 V
Noise Figure (dB)
7.0
Device Voltage (V)
+5
Current (mA)
1150
1) OIP3 is measured with two tones at an output power of +14
dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C8=1 F
*C6 shall be placed as close as
possible to the pin.
C10=1 F
C9=100pF
C7=100pF
L1=27 nH
(Coil Inductor)
C3=2 pF
RF OUT
L2=27 nH C6=1.5 pF
(Coil Inductor)
ASX621
RF IN
C4=56 pF
2.5 mm
C1=56 pF
C5=2.2 pF
C2=1.2 pF
S-parameters
20
5
0
15
S11 [dB]
Gain (dB)
-5
10
-10
5
-15
0
1800
2000
2200
2400
2600
2800
3000
-20
1800
2000
2200
2400
2600
2800
3000
Frequency [MHz]
Frequency (MHz)
5
0
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
2
1
-25
-30
1800
3
2000
2200
2400
2600
2800
3000
0
0
500
8/12
1000
1500
2000
2500
3000
3500
Frequency [MHz]
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX621
250 ~ 3000 MHz MMIC Amplifier
APPLICATION CIRCUIT
LTE
Frequency (MHz)
2620
2690
Magnitude S21 (dB)
16.9
15.5
Magnitude S11 (dB)
-18
-18
Magnitude S22 (dB)
-12
-8
Output P1dB (dBm)
33
33
2620 ~ 2690 MHz
Output IP3 (dBm)
48
49
+5 V
Noise Figure (dB)
5.5
5.4
Device Voltage (V)
+5
Current (mA)
1150
1)
1) OIP3 is measured with two tones at an output power of +16
dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vs=5 V
D1=5.6V
Zener Diode
C6=1 F
C8=1 F
C7=100pF
C5=100pF
L1=27 nH
(Coil Inductor)
L2=27 nH C4=1.2 pF
(Coil Inductor)
C2=1.2 pF
ASX621
RF IN
2.5 mm
RF OUT
2 mm
C3=1.5 pF
C1=1.5 pF
S-parameters
0
25
-5
20
S11 (dB)
Gain (dB)
-10
15
10
-15
-20
5
0
2400
-25
2500
2600
2700
2800
2900
3000
-30
2400
2500
2600
Frequency (MHz)
2700
2800
2900
3000
Frequency (MHz)
5
0
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
2
1
-25
-30
2400
3
2500
2600
2700
2800
2900
3000
0
0
500
Frequency (MHz)
9/12
1000
1500
2000
2500
3000
3500
Frequency [MHz]
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX621
250 ~ 3000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WiMAX
Frequency (MHz)
2700
2900
Magnitude S21 (dB)
16.0
14.0
Magnitude S11 (dB)
-12
-12
Magnitude S22 (dB)
-15
-15
Output P1dB (dBm)
33
2700 ~ 2900 MHz
Output IP31) (dBm)
48
+5 V
Noise Figure (dB)
5.9
Device Voltage (V)
+5
Current (mA)
1150
1) OIP3 is measured with two tones at an output power of +15
dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C6=1 F
*C4 shall be placed as close as
possible to the pin.
C8=1 F
C7=100pF
C5=100pF
L1=27 nH
(Coil Inductor)
L2=27 nH C4=1 pF
(Coil Inductor)
C2=1.2 pF
ASX621
RF IN
RF OUT
2.5 mm
C3=1.2 pF
C1=1.5 pF
S-parameters
25
0
20
15
S11 (dB)
Gain (dB)
-5
10
-10
-15
5
0
2500
2600
2700
2800
2900
3000
3100
-20
2500
2600
2700
Frequency (MHz)
2800
2900
3000
3100
Frequency (MHz)
0
5
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
2
1
-25
-30
2500
3
2600
2700
2800
2900
3000
3100
0
0
500
Frequency (MHz)
10/12
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX621
250 ~ 3000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Others
1200 ~ 1400 MHz
+5 V
Frequency (MHz)
1200
1300
1400
Magnitude S21 (dB)
25.5
23.0
20.0
Magnitude S11 (dB)
-14
-12
-7
Magnitude S22 (dB)
-10
-9
-7
Output P1dB (dBm)
31.0
32.5
31.0
Output IP31) (dBm)
48
48
47
Noise Figure (dB)
9.5
9.5
9.5
Device Voltage (V)
+5
+5
+5
Current (mA)
1150
1150
1150
1) OIP3 is measured with two tones at an output power of +14 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
D1=5.6V
Zener Diode
C7=1 F
C9=1 F
C6=100pF
C8=100pF
C5=4.7 pF
C4=8 pF
RF OUT
2.5 mm ASX621
L2=39 nH
(Coil Inductor)
RF IN
L1=39 nH
(Coil Inductor)
C2=100 pF
3.5 mm
R1=10 
C3=5 pF
C1=3 pF
S-parameters
35
0
30
-5
20
S11 (dB)
Gain (dB)
25
15
10
-10
-15
5
0
1000
1100
1200
1300
1400
1500
1600
-20
1000
1100
1200
Frequency (MHz)
5
0
4
Stability Factor
5
S22 (dB)
-5
-10
-15
-20
1000
1400
1500
1600
3
2
1
1100
1200
1300
1400
1500
1600
0
0
500
Frequency (MHz)
11/12
1300
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
ASX621
250 ~ 3000 MHz MMIC Amplifier
Recommended Soldering Reflow Profile
260 C
Ramp-up
(3 C/sec)
20~40 sec
Ramp-down
(6 C/sec)
200 C
150 C
60~180 sec
Copyright 2006-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in
any form or by any means without the prior written consent of ASB.
12/12
ASB Inc.  [email protected]  Tel: +82-42-528-7225
February 2017
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