IXYS IXFH26N60Q Hiperfettm power mosfets q-class Datasheet

HiPerFETTM
Power MOSFETs
IXFH 26N60Q
IXFT 26N60Q
Q-Class
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
600
600
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
26
104
26
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
Maximum Ratings
360
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
(TAB)
TO-268 (D3) ( IXFT)
G
°C
°C
°C
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
g
g
Features
l
l
l
l
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250µA
600
VGS(th)
VDS = VGS, ID = 4 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2002 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
D = Drain
TAB = Drain
°C
300
TO-247
G = Gate
S = Source
l
Symbol
(TAB)
W
-55 ... +150
150
-55 ... +150
TJ
TJM
Tstg
TO-247 AD (IXFH)
S
TC = 25°C
Weight
= 600 V
=
26 A
= 0.25 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
PD
VDSS
ID25
RDS(on)
V
l
l
Low gate charge
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
4.5
V
l
±200
nA
l
25
1
µA
mA
0.25
Ω
l
Easy to mount
Space savings
High power density
98635D (6/02)
IXFH 26N60Q
IXFT 26N60Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
Ciss
Coss
14
22
S
5100
pF
560
pF
210
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
30
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
32
ns
td(off)
RG = 2.0 Ω (External),
80
ns
16
ns
td(on)
tf
150 200
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
nC
80
nC
0.35
RthJC
RthCK
TO-247
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
IRM
nC
34
0.25
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
26
A
Repetitive; pulse width limited by TJM
104
A
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
250
ns
µC
A
IF = IS -di/dt = 100 A/µs, VR = 100 V
1
10
TO-247 AD (IXFH) Outline
1
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
TO-268 Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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