CYSTEKEC MTB20N03Q8 N-channel logic level enhancement mode power mosfet Datasheet

Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date :
Page No. : 1/6
CYStech Electronics Corp.
N-Channel LOGIC Level Enhancement Mode Power MOSFET
MTB20N03Q8
BVDSS
ID
RDSON(max)
30 V
8A
20mΩ
Description
The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• UIS, Rg 100% tested
• Pb-free & Halogen-free package
Symbol
Outline
MTB20N03Q8
G:Gate
D:Drain
S:Source
MTB20N03Q8
SOP-8
Pin 1
CYStek Product Specification
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date :
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=8A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TA=25 °C
Total Power Dissipation
TA=100 °C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Limits
Tj, Tstg
30
±20
8
6
32 *1
8
3.2
1.6 *2
3
1.5
-55~+175
Symbol
Rth,j-c
Rth,j-a
Value
25
50
PD
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
Note : 50°C / W when mounted on a 1 in2 pad of 2 oz copper.
Unit
°C/W
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
30
1.0
8
-
1.5
16
15.5
23
3.0
±100
1
25
20
31
V
V
S
nA
μA
μA
A
mΩ
mΩ
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=8A
VGS=±20
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
VDS =10V, VGS=10V
VGS =10V, ID=8A
VGS =5V, ID=6A
-
11
6
1.2
3.3
1115
116
82
2
-
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*ID(ON)
*RDS(ON)
Dynamic
Qg (VGS=10V) *1, 2
Qg (VGS=5V) *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
Rg
MTB20N03Q8
-
nC
ID=8A, VDS=15V, VGS=10V
pF
VGS=0V, VDS=15V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date :
Page No. : 3/6
Characteristics (Cont. TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Dynamic
td(ON) *1, 2
11
tr
16
*1, 2
ns
td(OFF) *1, 2
36
tf *1, 2
20
Source-Drain Diode Ratings and Characteristics
IS *1
2.3
A
ISM *3
9.2
VSD *1
1.2
V
trr
50
ns
Qrr
2
nC
Test Conditions
VDS=15V, ID=1A, VGS=10V,
RG=6Ω
IF=IS, VGS=0V
IF=IS, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTB20N03Q8
MTB20N03Q8
Package
SOP-8
(RoHS compliant & Halogen-free package)
Shipping
Marking
3000 pcs / Tape & Reel
B20N03
CYStek Product Specification
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date :
Page No. : 4/6
CYStech Electronics Corp.
Characteristic Curves
On-Resistance Variation with Drain Current and Gate Voltage
On-Region Characteristics
30
V = 10V 6V
7V
2.4
GS
25
2.2
5V
VGS = 3.5 V
RDS(ON) -Normalized
Drain-Source On-Resistance
ID - Drain Current(A)
2.0
20
4.5V
15
4V
10
5
3.5V
1.6
4.5 V
5.0 V
1.4
6.0 V
1.2
7.0 V
10 V
1.0
0.8
0
0
1
4
2
3
VDS - Drain Source Voltage(V)
6
0
5
On-Resistance Variation with Temperature
I D = 8A
VGS = 10V
12
18
ID - Drain Current(A)
RDS(ON) - On-Resistance( Ω )
1.3
1.0
0.7
0.07
0.06
0.05
0.04
TA = 125°C
0.03
TA = 25°C
0.02
0.01
-25
75
0
25
50
TJ - Junction Temperature (° C)
100
125
150
100
Is - Reverse Drain Current( A )
ID - Drain Current(A)
10
VGS = 0V
25
25° C
TA = -55° C
15
125°C
10
5
0
MTB20N03Q8
8
6
VGS- Gate-Source Voltage( V )
Body Diode Forward Voltage Variation
with Source Current and Temperature
VDS = 10V
1
4
2
Transfer Characteristics
30
20
30
ID = 8 A
0.08
1.6
0.4
-50
24
On-Resistance Variation with Gate-to-Source Voltage
0.09
1.9
RDS(on) - Normalized
Drain-Source On-Resistance
4.0 V
1.8
1.5
2.5
2.0
VGS - Gate-Source Voltage( V )
3.0
3.5
TA = 125°C
10
25° C
1
-55° C
0.1
0.01
0.001
0
0.2
0.6
0.8
1.0
0.4
VSD - Body Diode Forward Voltage( V )
1.2
1.4
CYStek Product Specification
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date :
Page No. : 5/6
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Gate Charge Characteristics
Capacitance Characteristics
10
1500
VDS = 5V
8
f = 1MHz
VGS = 0 V
1350
10V
1200
15V
Ciss
1050
Capacitance(pF)
VGS - Gate-Source Voltage( V )
ID = 8A
6
4
900
750
600
450
300
2
Coss
Crss
150
0
0
0
4
8
Q g - Gate Charge( nC )
12
5
15
10
VDS - Drain-Source Voltage( V )
0
16
ID - Drain Current( A )
P( pk ),Peak Transient Power( W )
100μs
1ms
10ms
100ms
1s
10s
DC
VGS= 10V
Single Pulse
RθJA= 125°C/ W
TA = 25°C
0.1
0.01
0.1
30
50
Single Pulse
RθJA= 125° C/ W
TA = 25°C
RDS(ON) Limit
1
25
Single Pulse Maximum Power Dissipation
Maximum Safe Operating Area
100
10
20
1
10
VDS - Drain-Source Voltage( V )
40
30
20
10
0
0.001
100
0.01
1
0.1
10
100
1000
Transient Thermal Response Curve
1
r( t ),Normalized Effective
Transient Thermal Resistance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
0.02
PDM
0.01
t1
t2
0.01
1.Duty Cycle,D =
t1
t2
Single Pulse
2.RθJA =125° C/ W
3.TJ - TA = P * RθJA (t)
4.R JA(t)=r(t) + RθJA
θ
0.001
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
t 1 ,Time (sec)
MTB20N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date :
Page No. : 6/6
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
Device Name
H
Date Code
J
E
D
K
Front View
Part A
Part A
M
L
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
N
O
F
*: Typical
Inches
Min.
Max.
0.1909
0.2007
0.1515
0.1555
0.2283
0.2441
0.0480
0.0519
0.0145
0.0185
0.1472
0.1527
0.0570
0.0649
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.85
5.10
3.85
3.95
5.80
6.20
1.22
1.32
0.37
0.47
3.74
3.88
1.45
1.65
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0019
0.0078
0.0118
0.0275
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.05
0.20
0.30
0.70
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB20N03Q8
CYStek Product Specification
Similar pages