MSA-1110 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-1110 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is designed for high dynamic range in either 50 or 75Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. • High Dynamic Range Cascadable 50Ω or 75Ω Gain Block The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 100 mil Package • 3 dB Bandwidth: 50 MHz to 1.6 GHz • 17.5 dBm Typical P1 dB at 0.5 GHz • 12 dB Typical 50 Ω Gain at 0.5 GHz • 3.5 dB Typical Noise Figure at 0.5 GHz • Hermetic Gold-ceramic Microstrip Package Typical Biasing Configuration R bias VCC > 8 V RFC (Optional) 4 C block IN 1 OUT MSA 2 IFD-53010 pkg C block 3 Vd = 5.5 V MSA-1110 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current 90 mA [2,3] Power Dissipation 560 mW RF Input Power +13 dBm Junction Temperature200°C Storage Temperature –65 to 200°C Thermal Resistance[2, 4]: θjc = 135°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.4 mW/°C for TC > 124°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω GP Power Gain (|S21| 2) f = 0.1 GHz ∆GP Gain Flatness f = 0.1 to 1.0 GHz f3 dB 3 dB Bandwidth[2] VSWR Min. Typ. Max. dB 11.5 12.5 13.5 ±1.0 dB ±0.7 GHz 1.6 Input VSWR f = 0.1 to 1.0 GHz 1.7:1 Output VSWR f = 0.1 to 1.0 GHz 1.9:1 NF 50 Ω Noise Figure f = 0.5 GHz P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm IP3 Third Order Intercept Point f = 0.5 GHz dBm 30.0 tD Group Delay f = 0.5 GHz psec 160 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient Notes: 1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current is on the following page. 2. Referenced from 50 MHz gain (GP). Units dB V 16.0 4.5 mV/°C 3.5 4.5 17.5 5.5 –8.0 6.5 MSA-1110 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 60 mA) Freq. GHz Mag .0005 .005 .025 .050 .100 .200 .300 .400 .500 .600 .700 .800 .900 1.000 1.500 2.000 2.500 3.000 .83 .54 .15 .10 .08 .09 .11 .13 .16 .18 .21 .23 .25 .27 .36 .42 .47 .47 S11 Ang S21 Mag Ang dB S12 Mag Ang Mag 19.5 9.44 16.8 6.92 13.0 4.47 12.6 4.26 12.5 4.23 12.4 4.17 12.3 4.10 12.3 4.10 12.1 4.04 12.0 3.98 11.8 3.89 11.6 3.80 11.4 3.71 11.1 3.60 9.8 3.10 8.42.64 7.22.29 5.9 1.97 176 158 167 171 171 166 160 154 148 143 137 131 126 120 96 74 59 43 –31.9 –18.7 –16.6 –16.5 –16.5 –16.4 –16.2 –16.1 –15.9 –15.6 –15.4 –15.2 –15.0 –14.8 –13.8 –13.3 –12.5 –13.2 .025 .116 .148 .149 .150 .152 .154 .157 .161 .165 .169 .173 .178 .182 .203 .217 .236 .220 39 34 9 5 4 4 5 6 7 8 8 8 8 8 4 1 –2 –10 .84 .55 .15 .10 .08 .09 .12 .15 .18 .20 .23 .25 .28 .30 .37 .40 .41 .38 dB –7 –50 –78 –64 –63 –74 –85 –94 –102 –108 –114 –120 –126 –131 –153 –171 177 159 S22 Ang k –7 –50 –79 –67 –66 –78 –89 –98 –106 –113 –120 –126 –132 –137 –160 –178 172 157 0.77 0.60 1.03 1.08 1.09 1.09 1.07 1.05 1.02 1.00 0.97 0.95 0.92 0.91 0.83 0.82 0.80 0.95 Typical Performance, TA = 25°C, ZO = 50 Ω (unless otherwise noted) 100 16 ZO = 50 10 10 Gp (dB) 6 40 4 0.1 GHz 0.5 GHz 1.0 GHz, 1.0 GHz 12 60 ZO = 75 8 Id (mA) Gp (dB) 12 14 TC = +125C TC = +25C 80 T = –55C C 14 2.0 GHz 8 6 20 2 0 .02 0 .05 0.1 0.5 1.0 2.0 3.0 4 0 2 4 GP 11 5 P1 dB (dBm) 12 18 –55 +25 +125 TEMPERATURE (C) Figure 4. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature, f = 0.5 GHz, Id = 60 mA. 80 5.0 Id = 75 mA 4.5 Id = 60 mA 16 14 NF 4 60 Figure 3. Power Gain vs. Current. NF (dB) 20 P1 dB Gp (dB) P1 dB (dBm) 17 16 40 Id (mA) 22 18 13 NF (dB) 20 Figure 2. Device Current vs. Voltage. Figure 1. Typical Power Gain vs. Frequency, Id = 60 mA. 8 Vd (V) FREQUENCY (GHz) 3 6 4.0 3.5 Id= 75 mA Id= 60 mA Id= 40 mA Id = 40 mA 12 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. 3.0 0.1 0.2 0.3 0.5 1.0 FREQUENCY (GHz) Figure 6. Noise Figure vs. Frequency. 2.0 Ordering Information Part Numbers MSA-1110 No. of Devices 100 Comments Bulk 100 mil Package Dimensions .040 1.02 4 GROUND .020 .508 RF OUTPUT AND BIAS RF INPUT 3 1 2 .004 .002 .10 .05 GROUND .100 2.54 .495 .030 12.57 .76 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .030 .76 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2747EN AV02-1233EN - May 29, 2008