IXYS IXGT32N90B2D1 Hiperfast igbt with fast diode Datasheet

Advance Technical Information
IXGH 32N90B2D1
IXGT 32N90B2D1
HiPerFASTTM IGBT
with Fast Diode
B2-Class
High Speed IGBTs with
Ultrafast Diode
Symbol
Test Conditions
Maximum Ratings
VCES
IC25
VCE(sat)
tfi typ
= 900 V
= 64 A
= 2.7 V
= 150 ns
TO-247 (IXGH)
VCES
TJ = 25°C to 150°C
900
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
900
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
64
A
IC110
TC = 110°C
32
A
ICM
TC = 25°C, 1 ms
200
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load: VCL < 600V
ICM = 64
A
PC
TC = 25°C
300
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Features
300
°C
• High frequency IGBT
• High current handling capability
• MOS Gate turn-on
TJ
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque (TO-247)
1.13/10Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g
C (TAB)
G
C
E
TO-268 (IXGT)
G
C (TAB)
E
G = Gate
E = Emitter
C = Collector
TAB = Collector
- drive simplicity
Applications
Symbol
Test Conditions
VGE(th)
IC = 250 mA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ± 20 V
VCE(sat)
IC = IC110, VGE = 15 V
© 2005 IXYS All rights reserved
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
3.0
TJ = 150°C
TJ = 125°C
2.2
2.1
5.0
V
300
1.5
μA
mA
± 100
nA
2.7
V
V
• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Very fast switching speeds for high
frequency applications
DS99392(12/05)
IXGH 32N90B2D1
IXGT 32N90B2D1
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IC = IC110 , VCE = 10 V
Pulse test, t < 300 μs, duty cycle < 2 %
18
S
1790
pF
146
pF
49
pF
89
nC
15
nC
34
nC
20
ns
∅P
Cies
Coes
28
VCE = 25 V, VGE = 0 V, f = 1 MHz
C res
Qg
Qge
IC = IC110 , VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
Inductive load, TJ = 25°C
td(off)
IC = IC110 , VGE = 15 V
260
VCE = 720 V, RG = Roff = 5 Ω
150
tfi
22
Eoff
2.2
td(on)
20
tri
Eon
td(off)
tfi
Inductive load, TJ = 125°C
IC = IC110 A, VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
Eoff
ns
400
ns
ns
4.5
mJ
ns
22
ns
3.8
mJ
360
ns
330
ns
5.75
mJ
RthJC
RthCS
TO-247 AD Outline
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
TO-268 Outline
0.42 K/W
(TO-247)
0.25
K/W
Ultrafast Diode
Symbol
Conditions
Maximum Ratings
IF110
TC = 110°C
27
Symbol
Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
VF
IF = 30 A;
IRM
t rr
IF = 50 A; diF/dt = -100 A/μs; TVJ = 100°C
VR = 100 V; VGE = 0 V
TVJ = 125°C
2.75
V
V
11.4
A
ns
0.9
K/W
K/W
1.9
5.5
190
RthJC
RthCS
A
0.25
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 1. Output Characteristics
@ 25 ºC
Fig. 2. Extended Output Characteristics
@ 25 ºC
240
70
VGE = 15V
VGE = 15V
13V
11V
60
50
9V
I C - Amperes
I C - Amperes
13V
200
40
30
7V
20
11V
160
120
9V
80
7V
40
10
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
2
4
6
8
Fig. 3. Output Characteristics
@ 125 ºC
14
16
18
20
1.5
VGE = 15V
VGE = 15V
1.4
VC E (sat)- Normalized
13V
11V
60
50
I C - Amperes
12
Fig. 4. Dependence of V CE(sat) on
Tem perature
70
9V
40
7V
30
20
10
I C = 64A
1.3
1.2
1.1
I C = 32A
1.0
0.9
I C = 16A
0.8
5V
0
0.7
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
4.5
-25
V CE - Volts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
Fig. 6. Input Adm ittance
6
140
5.5
I C = 64A
5
32A
16A
TJ = 25ºC
120
100
4.5
I C - Amperes
VC E - Volts
10
V C E - Volts
V C E - Volts
4
3.5
3
80
60
TJ = 125ºC
40
25ºC
2.5
-40ºC
20
2
0
1.5
6
7
8
9
10
11
12
13
V G E - Volts
© 2005 IXYS All rights reserved
14
15
16
17
4
5
6
7
V G E - Volts
8
9
10
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 8. Gate Charge
Fig. 7. Transconductance
35
16
30
14
I C = 32A
12
25
I G = 10mA
20
VG E - Volts
g f s - Siemens
VCE = 450V
T J = -40ºC
25ºC
15
125ºC
10
10
8
6
4
5
2
0
0
0
20
40
60
80
0
100
10
I C - Amperes
20
30
40
50
60
70
80
90
100
800
900
Q G - nanoCoulombs
Fig. 10. Reverse-Bias Safe
Operating Area
Fig. 9. Capacitance
10000
70
f = 1 MHz
60
I C - Amperes
Capacitance - p F
C ies
1000
C oes
50
40
30
100
TJ = 125ºC
20
R G = 10Ω
10
C res
dV/dT < 10V/ns
0
10
0
5
10
15
20
25
30
35
100
40
V C E - Volts
200
300
400
500
600
700
V C E - Volts
Fig. 11. Maxim um Transient Therm al Resistance
R( t h ) J C - ºC / W
1
0.1
0.01
0.1
1
10
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
100
1000
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 12. Dependence of Turn-off
Energy Loss on Gate Resistance
Fig. 13. Dependence of Turn-on
Energy Loss on Gate Resistance
18
16
16
14
12
E o n - MilliJoules
E o f f - MilliJoules
TJ = 125º C
I C = 64A
14
TJ = 125º C
10
VGE = 15V
VCE = 720V
8
I C = 32A
6
12
VGE = 15V
10
I C = 64A
VCE = 720V
8
I C = 32A
6
4
4
2
2
I C = 16A
0
5
10
15
20
25
30
35
40
45
I C = 16A
0
0
0
50
5
10
15
R G - Ohms
Fig. 14. Dependence of Turn-off
Energy Loss on Collector Current
30
35
40
45
50
9
R G = 5Ω
14
12
TJ = 125ºC
VGE = 15V
7
E o n - MilliJoules
VCE = 720V
10
8
6
TJ = 25ºC
4
TJ = 125ºC
R G = 5Ω
8
VGE = 15V
E o f f - MilliJoules
25
Fig. 15. Dependence of Turn-on
Energy Loss on Collector Current
16
VCE = 720V
6
5
4
TJ = 25ºC
3
2
2
1
0
0
10
20
30
40
50
60
70
10
20
30
40
50
60
I C - Amperes
I C - Amperes
Fig. 16. Dependence of Turn-off
Energy Loss on Tem perature
Fig. 17. Dependence of Turn-on
Energy Loss on Tem perature
16
70
10
12
R G = 5Ω
9
R G = 5Ω
VGE = 15V
8
VGE = 15V
7
VCE = 720V
VCE = 720V
I C = 64A
10
8
I C = 32A
6
4
E o n - MilliJoules
14
E o f f - MilliJoules
20
R G - Ohms
I C = 64A
6
5
IC = 32A
4
3
2
2
IC = 16A
1
I C = 16A
0
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
© 2005 IXYS All rights reserved
105 115 125
0
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105
115 125
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 18. Dependence of Turn-off
Sw itching Tim e on Gate Resistance
Fig. 19. Dependence of Turn-on
Sw itching Tim e on Gate Resistance
550
400
40
370
360
I C = 16A, 32A, 64A
425
350
IC = 32A, 16A
400
340
375
330
350
320
4
6
8
10
12
14
16
18
V CE = 720V
120
30
90
I C = 32A
25
60
20
30
I C = 16A
15
20
0
4
6
8
10
12
R G - Ohms
14
16
18
20
Fig. 21. Dependence of Turn-on
Sw itching Tim e on Collector Current
Fig. 20. Dependence of Turn-off
Sw itching Tim e on Collector Current
30
500
tfi - - - - -
td(off)
450
t d ( o n ) - Nanoseconds
RG = 5Ω, VGE = 15V
400
V CE = 720V
350
T J = 125 ºC
300
250
T J = 25 ºC
200
100
150
tri - - - -
td(on)
28
90
RG = 5Ω, VGE = 15V
26
80
V CE = 720V
24
70
22
60
T J = 125 ºC
20
50
18
40
16
30
T J = 25 ºC
14
20
12
10
10
100
15
20
25
30
35
40
45
50
55
60
0
10
65
20
30
40
50
60
70
I C - Amperes
I C - Amperes
Fig. 22. Dependence of Turn-off
Sw itching Tim e on Tem perature
Fig. 23. De pendence of Turn-on
Sw itching Tim e on Tem perature
40
400
150
tri - - - - -
I C = 64A, 32A, 16A
250
I C = 64A, 32A, 16A
200
td(off)
tfi - - - - -
R G = 5Ω , VGE = 15V
150
RG = 5Ω , VGE = 15V
35
125
V CE = 720V
30
100
I C = 64A
25
75
I C = 32A
20
50
15
25
VCE = 720V
IC = 16A
100
10
25
35
45
55
65
75
85
95
105 115 125
T J - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
0
25
35
45
55
65
75
85
95 105 115 125
T J - Degrees Centigrade
t r i - Nanoseconds
300
t d ( o n ) - Nanoseconds
td(on)
350
t r i - Nanoseconds
t d ( o f f ) / t f i - Nanoseconds
IC = 64A
35
R G - Ohms
t d ( o f f ) / t f i - Nanoseconds
150
T J = 125ºC, V GE = 15V
t r i - Nanoseconds
475
t f i - Nanoseconds
380
V CE = 720V
450
180
tri - - - - -
td(on)
390
T J = 125ºC, V GE = 15V
500
45
t d ( o n ) - Nanoseconds
525
t d ( o f f ) - Nanoseconds
tfi - - - - -
td(off)
IXGH 32N90B2D1
IXGT 32N90B2D1
Ultrafast Diode Charateristic Curves
5
70
A
60
60
TVJ= 100°C
μC V = 600V
R
Qr
IF 50
IRM
IF= 60A
IF= 30A
IF= 15A
TVJ=150°C
30
50
4
3
40
2
20
20
TVJ= 25°C
1
10
10
0
1
2
3
V
0
100
4
0
A/μs 1000
-diF/dt
VF
Fig. 24. Forward current IF versus VF
2.0
V
120
80
120 C 160
tfr
V FR
80
0.8
40
0.4
0
0
200
TVJ
400
600
800 1000
A/μs
0
200
400
-diF/dt
Fig. 27. Dynamic parameters Qr, IRM
versus TVJ
Fig. 28. Recovery time trr versus -diF/dt
2
0.0
600 A/μs
800 1000
diF/dt
Fig. 29. Peak forward voltage VFR and
tfr versus diF/dt
Constants for ZthJC calculation:
1
i
K/W
1
2
3
ZthJC
0.1
0.01
0.001
0.00001
μs
140
0.0
40
tfr
1.2
IF= 60A
IF= 30A
IF=15A
160
0
TVJ= 100°C
IF = 30A
VFR
IRM
Qr
600 A/μs
800 1000
-diF/dt
120
TVJ= 100°C
VR = 600V
180
0.5
400
220
trr
Kf
200
Fig. 26. Peak reverse current IRM
versus -diF/dt
200
1.5
0
Fig. 25. Reverse recovery charge Qr
versus -diF/dt
ns
1.0
IF= 60A
IF= 30A
IF=15A
40
30
TVJ=100°C
0
TVJ= 100°C
VR = 600V
A
0.0001
0.001
0.01
s
0.1
t
Fig. 30. Transient thermal resistance junction to case
© 2005 IXYS All rights reserved
1
Rthi (K/W)
ti (s)
0.465
0.179
0.256
0.0052
0.0003
0.0397
Similar pages