SeCoS MMBTA05 Epitaxial transistor Datasheet

MMBTA05
NPN Silicon
Epitaxial Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOT-23
The MMBTA05 is Amplifier Transistor

A
L
FEATURES
3
3
Driver Transistor

1
1
2
K
E
2
D
MARKING
F
G
H
J
Collector
C

A
B
C
D
E
F
Base
E
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.

1H
B
C B
Top View
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15

Emitter
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissapation
Junction, Storage Temperature
SYMBOL
RATINGS
UNIT
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
60
60
4
0.5
300
150, -55~150
V
V
V
A
mW
℃
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
http://www.SeCoSGmbH.com/
26-Oct-2009 Rev. C
TEST CONDITIONS
IC =100µA, IE =0
IC =1mA, IB =0
IE =100µA, IC =0
VCB =60V, IE =0
VCE =60V, IB =0
VEB =3V, IC =0
VCE =1V, IC =10mA
VCE =1V, IC =100mA
IC =100mA, IB =10mA
VCE =1V, IC=100mA
VCE =2V, IC=10mA,f=100MHz
SYMBOL
MIN.
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE1
hFE2
VCE(sat)
VBE
FT
60
60
4
100
100
MAX.
0.1
0.1
0.1
400
0.25
1.2
100
UNIT
V
V
V
µA
µA
µA
V
V
MHz
Any changes of specification will not be informed individually.
Page 1 of 2
MMBTA05
Elektronische Bauelemente
NPN Silicon
Epitaxial Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
26-Oct-2009 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 2
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