IRFHS9301PbF HEXFET® Power MOSFET VDS -30 V VGS max ±20 V RDS(on) max (@VGS = -10V) Qg (typical) ID D 1 37 mΩ 13 nC D 2 A G 3 -8.5 (@TC = 25°C) TOP VIEW d D 6 D D D D 5 D D S G 4 S D S S 2mm x 2mm PQFN Applications l l Charge and Discharge Switch for Battery Application System/load switch Features and Benefits Features Low RDSon (≤ 37mΩ) Benefits Lower Conduction Losses Low Thermal Resistance to PCB (≤ 13°C/W) Enable better thermal dissipation Low Profile (≤ 1.0 mm) results in Increased Power Density Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type IRFHS9301TRPBF IRFHS9301TR2PBF Environmentally Friendlier Standard Pack Form Quantity PQFN 2mm x 2mm Tape and Reel 4000 PQFN 2mm x 2mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @ TA = 70°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Notes through are on page 2 1 f f Max. -30 ± 20 -6.0 -4.8 -13 -10 -8.5 d d d c www.irf.com © 2014 International Rectifier -52 2.1 1.3 0.02 -55 to + 150 Submit Datasheet Feedback Units V A W W/°C °C May 21, 2014 IRFHS9301PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage Parameter -30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C ––– 30 37 65 -2.4 ––– RDS(on) Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient ––– -1.3 ––– 52 -1.8 -4.8 IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 IGSS mΩ Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA e = -6.2A e VGS = -10V, ID = -7.8A VGS = -4.5V, ID V VDS = VGS, ID = -25μA mV/°C VDS = -24V, VGS = 0V μA VDS = -24V, VGS = 0V, TJ = 125°C nA VGS = -20V VGS = 20V gfs Qg Forward Transconductance 9.3 ––– ––– S VDS = -10V, ID = -7.8A Total Gate Charge ––– 6.9 ––– nC VDS = -15V,VGS = -4.5V,ID = - 7.8A Qg Total Gate Charge ––– 13 ––– Qgs Gate-to-Source Charge ––– 2.1 ––– nC VDS = -15V Qgd Gate-to-Drain Charge ––– 3.9 ––– RG Gate Resistance ––– 17 ––– td(on) Turn-On Delay Time ––– 12 ––– VDD = -15V, VGS = -4.5V ID = -7.8A tr Rise Time ––– 80 ––– td(off) Turn-Off Delay Time ––– 13 ––– tf Fall Time ––– 25 ––– Ciss Input Capacitance ––– 580 ––– Coss Output Capacitance ––– 125 ––– Crss Reverse Transfer Capacitance ––– 79 ––– Min. Typ. Max. VGS = -10V ID = -7.8A Ω ns e RG = 2.0Ω See Figs. 19a & 19b VGS = 0V pF VDS = -25V ƒ = 1.0KHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current c (Body Diode) d ––– ––– -8.5 ––– ––– -52 ––– -1.2 Conditions Units MOSFET symbol A D showing the integral reverse G p-n junction diode. S e VSD Diode Forward Voltage ––– trr Reverse Recovery Time ––– 30 45 ns TJ = 25°C, IF = -7.8A, VDD = -15V Qrr Reverse Recovery Charge ––– 110 170 nC di/dt = 280/μs V TJ = 25°C, IS = -7.8A, VGS = 0V Thermal Resistance Typ. Max. RθJC (Bottom) Junction-to-Case ––– 13 RθJC (Top) ––– 90 RθJA Junction-to-Ambient f RθJA Junction-to-Ambient (t<10s) Parameter g Junction-to-Case g f 60 ––– e Units °C/W 42 Notes: Repetitive rating; pulse width limited by max. junction temperature. Current limited by package. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ of approximately 90°C. . 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 21, 2014 IRFHS9301PbF 1000 1000 100 BOTTOM 10 -2.8V 1 100 BOTTOM 10 -2.8V 1 ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 25°C 0.1 0.1 1 Tj = 150°C 0.1 10 0.1 100 1 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) -ID, Drain-to-Source Current(A) 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 10 TJ = 150°C 1 TJ = 25°C VDS = -15V ≤60μs PULSE WIDTH 0.1 ID = -7.8A VGS = -10V 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 6 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 10000 -V GS, Gate-to-Source Voltage (V) ID= -7.8A Coss = Cds + Cgd Ciss Coss 100 Fig 4. Normalized On-Resistance vs. Temperature 14 VGS = 0V, f = 1 KHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) -VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Crss 10 VDS= -24V VDS= -15V 12 VDS= -6V 10 8 6 4 2 0 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 VGS -10V -8.0V -5.0V -4.5V -3.5V -3.3V -3.0V -2.8V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -10V -8.0V -5.0V -4.5V -3.5V -3.3V -3.0V -2.8V www.irf.com © 2014 International Rectifier 0 2 4 6 8 10 12 14 16 18 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback May 21, 2014 IRFHS9301PbF 1000 -ID, Drain-to-Source Current (A) -ISD, Reverse Drain Current (A) 100 TJ = 150°C 10 TJ = 25°C VGS = 0V 0.6 0.8 100 1msec 10 100μsec 1 0.1 Tc = 25°C Tj = 150°C Single Pulse DC 10msec 0.01 1.0 0.4 OPERATION IN THIS AREA LIMITED BY RDS(on) 0.1 1.0 1 10 100 VDS, Drain-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 14 2.0 -VGS(th), Gate threshold Voltage (V) LIMITED BY PACKAGE ID, Drain Current (A) 12 10 8 6 4 2 ID = -25uA 1.5 1.0 0 25 50 75 100 125 150 0.5 -75 -50 -25 TC, Case Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( ZthJC ) 100 10 D = 0.50 0.20 1 0.1 0.01 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 21, 2014 100 ( Ω) RDS(on), Drain-to -Source On Resistance m RDS(on), Drain-to -Source On Resistance (mΩ) IRFHS9301PbF ID = -7.8A 80 60 TJ = 125°C 40 TJ = 25°C 20 0 5 10 15 100 Vgs = -4.5V 80 60 40 Vgs = -10V 20 20 0 5 10 15 20 25 30 -ID, Drain Current (A) -VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 600 500 Power (W) 400 300 200 100 0 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) Fig 14. Typical Power vs. Time D.U.T * Driver Gate Drive + + - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD + - Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode Reverse Polarity of D.U.T for P-Channel VDD Forward Drop Inductor Current Inductor Curent Ripple ≤ 5% * P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. ISD * VGS = 5V for Logic Level Devices Fig 15. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 21, 2014 IRFHS9301PbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 16a. Gate Charge Test Circuit VDS RG RD tr t d(off) tf VGS D.U.T. - + 10% V DD -VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 17a. Switching Time Test Circuit 6 Qgs2 Qgs1 Fig 16b. Gate Charge Waveform td(on) VGS Qgd www.irf.com © 2014 International Rectifier 90% VDS Fig 17b. Switching Time Waveforms Submit Datasheet Feedback May 21, 2014 IRFHS9301PbF PQFN Package Details PQFN Part Marking 9301 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 21, 2014 IRFHS9301PbF PQFN Tape and Reel CORE TAPE Remark: Width Table 2: COVER TAPE (WIDTH) 5.4 mm 9.5 mm - Dimension above are typical dimensions. - Cover tape thickness is 0.048mm +/- 0.005mm. - Surface resistivity 10E5 < Rs <10E9. TOLERANCE +/- 0.1 mm +/- 0.1 mm Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 21, 2014 IRFHS9301PbF † Qualification information †† Industrial Qualification level (per JEDE C JES D47F Moisture Sensitivity Level PQFN 2mm x 2mm RoHS compliant ††† guidelines ) MS L1 ††† (per IPC/JE DE C J-S TD-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Revision History Date 5/12/2014 5/21/2014 Comment • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) • Updated data sheet based on corporate template. • Updated qual level from "Consumer" to "Industrial" on page 1 & 9. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 21, 2014