PRELIMINARY RMPA2266 i-Lo™ tm WCDMA Band I Power Amplifier Module Features General Description ■ 40% WCDMA efficiency at +28dBm Pout The RMPA2266 Power Amplifier Module (PAM) is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA2266 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (< +16dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 60% at 16dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4 x 4 x 1.0mm LCC package is pin-compatible and a drop-in replacement for last generation 4 x 4mm PAMs widely used today, minimizing the design time to apply this performance-enhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF’s InGaP Heterojunction Bipolar Transistor (HBT) process. ■ 20% WCDMA efficiency (58mA total current) at +16dBm Pout ■ Low quiescent current (Iccq): 25mA in low-power mode ■ Meets UMTS/WCDMA performance requirements ■ Meets HSDPA performance requirements ■ Single positive-supply operation with low power and shutdown modes – 3.4V typical Vcc operation – Low Vref (2.85V) compatible with advanced handset chipsets ■ Compact Lead-free compliant LCC package – (4.0 x 4.0 x 1.0mm nominal) ■ Industry standard pinout ■ Internally matched to 50Ω and DC blocked RF input/output Functional Block Diagram (Top View) MMIC Vcc1 1 RF IN 2 GND 3 Vmode 4 Vref 5 10 Vcc2 INPUT MATCH 9 GND OUTPUT MATCH BIAS/MODE SWITCH 8 RF OUT 7 GND 6 GND 11 (paddle ground on package bottom) ©2007 Fairchild Semiconductor Corporation RMPA2266 i-Lo™ Rev. D www.fairchildsemi.com RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module April 2007 PRELIMINARY Symbol Vcc1, Vcc2 Parameter Ratings Units 5.0 V 2.6 to 3.5 V Power Control Voltage 3.5 V Pin RF Input Power +10 dBm Tstg Storage Temperature -55 to +150 °C Vref Vmode Supply Voltages Reference Voltage Note: 1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics(2) Symbol f Parameter Comments Operating Frequency Min. Typ. 1920 Max. Units 1980 MHz WCDMA OPERATION Gp Po PAEd Itot ACLR1 ACLR2 Power Gain Linear Output Power Po = +28dBm, Vmode = 0V 28 dB Po = +16dBm, Vmode ≥ 2.0V 22 dB Vmode = 0V 28 dBm Vmode ≥ 2.0V 16 dBm PAEd (digital) @ 28dBm Vmode = 0V 40 % PAEd (digital) @ 16dBm Vmode ≥ 2.0V 20 % High Power Total Current Po = +28dBm, Vmode = 0V 460 mA 58 mA Low Power Total Current Po = +16dBm, Vmode ≥ 2.0V Adjacent Channel Leakage Ratio WCDMA Modulation 3GPP 3.2 03-00 DPCCH+1 DCDCH ±5.00MHz Offset Po = +28dBm, Vmode = 0V -40 dBc Po = +16dBm, Vmode ≥ 2.0V -42 dBc Po = +28dBm, Vmode = 0V -52 dBc Po = +16dBm, Vmode ≥ 2.0V -57 dBc ±10.0MHz Offset GENERAL CHARACTERISTICS VSWR Input Impedance Rx No 2.0:1 2.5:1 Receive Band Noise Power Po ≤ +28dBm, 2110 to 2170MHz -136 dBm/Hz 2fo Harmonic Suppression Po ≤ +28dBm -38 dBc 3fo–5fo Harmonic Suppression Po ≤ +28dBm -55 dBc S Spurious Outputs (3)(4) Load VSWR ≤ 5.0:1 -60 Ruggedness with Load Mismatch (4) No permanent damage Tc Case Operating Temperature dBc 10:1 -30 85 °C DC CHARACTERISTICS Iccq Iref Icc(off) Quiescent Current Vmode ≥ 2.0V 25 Reference Current Po ≤ +28dBm 5 Shutdown Leakage Current No applied RF signal 1 mA mA 5 µA Notes: 2. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted. 3. All phase angles. 4. Guaranteed by design. ©2007 Fairchild Semiconductor Corporation RMPA2266 i-Lo™ Rev. D www.fairchildsemi.com 2 RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module Absolute Ratings(1) PRELIMINARY Symbol f Vcc1, Vcc2 Vref Vmode Pout Tc Parameter Min. Operating Frequency Typ. 1920 Max. Units 1980 MHz Supply Voltage 3.0 3.4 4.2 V Reference Voltage Operating Shutdown 2.7 0 2.85 3.1 0.5 V V Bias Control Voltage Low-Power High-Power 1.8 0 2.0 3.0 0.5 V V +28 dBm dBm +85 °C Linear Output Power High-Power Low-Power +16 Case Operating Temperature -30 DC Turn On Sequence: 1. Vcc1 = Vcc2 = 3.4V (typical) 2. Vref = 2.85V (typical) 3. High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2.0V (Pout < 16dBm) ©2007 Fairchild Semiconductor Corporation RMPA2266 i-Lo™ Rev. D www.fairchildsemi.com 3 RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module Recommended Operating Conditions PRELIMINARY 1 5 3 6 6 5 2 Z XYTT 2266 4 7 5 Materials List Qty Item No. 1 2 5 Ref 3 3 2 1 1 A/R A/R 1 2 3 4 5 5 (Alt) 6 7 7 (Alt) 8 9 Part Number Description G657553-1 V2 #142-0701-841 #2340-5211TN Vendor PC Board SMA Connector Terminals Assembly, RMPA2266 1000pF Capacitor (0603) 1000pF Capacitor (0603) 3.3µF Capacitor (1206) 0.1µF Capacitor (0603) 0.1µF Capacitor (0603) Solder Paste Solder Paste GRM39X7R102K50V ECJ-1VB1H102K C3216X5R1A335M GRM39Y5V104Z16V ECJ-1VB1C104K SN63 SN96 Fairchild Johnson 3M Fairchild Murata Panasonic TDK Murata Panasonic Indium Corp. Indium Corp. Evaluation Board Schematic 3.3 µF 1000 pF 1 VCC1 VREF 50 Ohm TRL SMA2 RF OUT 3, 6, 7, 9 5 11 1000 pF 0.1 µF ©2007 Fairchild Semiconductor Corporation RMPA2266 i-Lo™ Rev. D 8 Z 4 VMODE XYTT 2 50 Ohm TRL VCC2 10 2266 SMA1 RF IN 3.3 µF 1000 pF (PACKAGE BASE) www.fairchildsemi.com 4 RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module Evaluation Board Layout PRELIMINARY I/O 1 INDICATOR TOP VIEW 10 2 9 8 7 2 Z T T XY 2 6 6 Z 4 XYTT 3 2266 (4.00mm +.100 –.050 ) SQUARE 1 6 5 1.1mm MAX. FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .10mm .30mm TYP. .10mm .85mm TYP. 3.65mm 11 .40mm .45mm 2 1 1.08mm .18mm 1.84mm DETAIL A. TYP. BOTTOM VIEW Signal Descriptions Pin # Signal Name Description 1 Vcc1 Supply Voltage to Input Stage 2 RF In RF Input Signal 3 GND Ground 4 Vmode High Power/Low Power Mode Control 5 Vref Reference Voltage 6 GND Ground 7 GND Ground 8 RF Out RF Output Signal 9 GND Ground 10 Vcc2 Supply Voltage to Output Stage 11 GND Paddle Ground ©2007 Fairchild Semiconductor Corporation RMPA2266 i-Lo™ Rev. D www.fairchildsemi.com 5 RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module Package Outline PRELIMINARY CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. Reflow Profile • Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3°C/sec. • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200°C. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255–260°C, with a maximum limit of 260°C. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. • Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Device Usage: Fairchild recommends the following procedures prior to assembly. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices. • Assemble the devices within 7 days of removal from the dry pack. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15°C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed. • During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C • If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure per JEDEC J-STD-020 must be performed. Recommended Solder Reflow Profile Peak temp 260 +0/-5 °C 10 - 20 sec 260 Temperature (°C) Ramp-Up Rate 3 °C/sec max 217 200 Time above liquidus temp 60 - 150 sec 150 Preheat, 150 to 200 °C 60 - 180 sec 100 Ramp-Up Rate 3 °C/sec max Ramp-Down Rate 6 °C/sec max 50 25 Time 25 °C/sec to peak temp 6 minutes max Time (Sec) ©2007 Fairchild Semiconductor Corporation RMPA2266 i-Lo™ Rev. D www.fairchildsemi.com 6 RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module Applications Information PRELIMINARY ® ACEx Across the board. Around the world.¥ ActiveArray¥ Bottomless¥ Build it Now¥ CoolFET¥ CROSSVOLT¥ CTL™ Current Transfer Logic™ DOME¥ 2 E CMOS¥ ® EcoSPARK EnSigna¥ FACT Quiet Series™ ® FACT ® FAST FASTr¥ FPS¥ ® FRFET GlobalOptoisolator¥ GTO¥ Programmable Active Droop¥ ® QFET QS¥ QT Optoelectronics¥ Quiet Series¥ RapidConfigure¥ RapidConnect¥ ScalarPump¥ SMART START¥ ® SPM STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SyncFET™ TCM¥ ® The Power Franchise HiSeC¥ i-Lo¥ ImpliedDisconnect¥ IntelliMAX¥ ISOPLANAR¥ MICROCOUPLER¥ MicroPak¥ MICROWIRE¥ MSX¥ MSXPro¥ OCX¥ OCXPro¥ ® OPTOLOGIC ® OPTOPLANAR PACMAN¥ POP¥ ® Power220 ® Power247 PowerEdge¥ PowerSaver¥ ® PowerTrench ® TinyLogic TINYOPTO¥ TinyPower¥ TinyWire¥ TruTranslation¥ PSerDes¥ ® UHC UniFET¥ VCX¥ Wire¥ ™ TinyBoost¥ TinyBuck¥ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I24 ©2007 Fairchild Semiconductor Corporation RMPA2266 i-Lo™ Rev. D www.fairchildsemi.com 7 RMPA2266 i-Lo™ WCDMA Band I Power Amplifier Module TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.