ETL MUN2114RT1 Bias resistor transistor Datasheet

Bias Resistor Transistor
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors; a series
base resistor and a base–emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC–59 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
PNP SILICON
BIAS RESISTOR
TRANSISTOR
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
3
PIN2
base
(Input)
R1
PIN3
Collector
(Output)
1
2
R2
PIN2
Emitter
(Ground)
CASE 318–03 , STYLE 1
( SC – 59 )
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T A = 25°C (1)
Derate above 25°C
Symbol
VCBO
V CEO
IC
PD
Value
50
50
100
200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Symbol
R θ JA
T J , T stg
Value
625
–65 to +150
Unit
°C/W
°C
TL
260
10
°C
Sec
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
DEVICE MARKING AND RESISTOR VALUES
8 8
Device
Marking
R1 (K)
R2 (K)
MUN2111RT1
6A
10
10
MUN2112RT1
6B
22
22
MUN2113RT1
6C
47
47
MUN2114RT1
6D
10
47
MUN2115RT1 (2)
6E
10
MUN2116RT1 (2)
6F
4.7
MUN2130RT1 (2)
6G
1.0
1.0
MUN2131RT1 (2)
6H
2.2
2.2
MUN2132RT1 (2)
6J
4.7
4.7
MUN2133RT1 (2)
6K
4.7
47
MUN2134R T1 (2)
6L
22
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
P1–1/7
MUN2111RT1 SERIES
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
I CBO
I CEO
I EBO
50
50
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
-
nAdc
nAdc
mAdc
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
-
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB=50V, I E = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
MUN2111RT1
(VEB = 6.0 V, IC = 0)
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
Collector-Emitter Breakdown Voltage(3)(IC=2.0mA, IB=0)
ON CHARACTERISTICS
V(BR)CBO
V(BR)CEO
Vdc
Vdc
(3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN2111RT1
hFE
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA)
VCE(sat)
(IC = 10 mA, IB = 0.3 mA)
MUN2111RT1 MUN2112RT1
MUN2113RT1 MUN2114RT1 MUN2115RT1 MUN2130RT1
(IC = 10 mA, IB = 5.0 mA)
MUN2131RT1
MUN2116RT1 MUN2132RT1
(IC = 10 mA, IB = 1.0 mA)
MUN2134RT1
Output Voltage (on)
VOL
(VCC=5.0V,VB=2.5V, RL=1.0kΩ)
MUN2111RT1
MUN2112RT1 MUN2114RT1 MUN2115RT1 MUN2116RT1
MUN2130RT1 MUN2131RT1 MUN2132RT1 MUN2133RT1
MUN2134RT1
(VCC =5.0V,VB=3.5V, RL= 1.0kΩ)
MUN2113RT1
Vdc
-
-
0.25
-
-
0.25
-
-
0.25
Vdc
-
-
0.2
-
-
0.2
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
P1–2/7
MUN2111RT1 SERIES
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off) (VCC= 5.0V, VB = 0.5 V, R L = 1.0kΩ)
(VCC= 5.0V, VB = 0.050 V, RL =1.0kΩ)
MUN2130RT1
(VCC= 5.0V, VB = 0.25 V, RL =1.0kΩ)
MUN2115RT1
MUN2116RT1
MUN2131RT1
MUN2132RT1
Input Resistor
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
Resistor Ratio MUN2111RT1 MUN2112RT1 MUN2113RT1
MUN2114RT1
MUN2115RT1 MUN2116RT1
MUN2130RT1 MUN2131RT1 MUN2132RT1
MUN2133RT1
MUN2134RT1
Symbol
VOH
Min
4.9
Typ
—
Max
—
Unit
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
kΩ
R 1 /R 2
0.8
0.17
—
0.8
0.055
0.38
1.0
0.21
—
1.0
0.1
0.47
1.2
0.25
—
1.2
0.185
0.56
P1–3/7
MUN2111RT1 SERIES
V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
P D , POWER DISSIPATION (MILLIWATTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2111RT1
250
200
150
100
R
50
θJA
= 625°C/W
0
–50
0
50
10
1
I C /I B =10
T A = –25°C
75°C
0.1
0.01
150
0
20
V
CE
60
80
4
= 10 V
T A =75°C
25°C
100
–25°C
10
f = 1 MHz
l E= 0 V
T A = 25°C
3
2
1
0
1
10
100
0
100
V in , INPUT VOLTAGE (VOLTS)
T A = –25°C
10
20
30
40
50
100
25°C
75°C
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
I C , COLLECTOR CURRENT (mA)
40
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
C ob , CAPACITANCE (pF)
h FE , DC CURRENT GAIN (NORMALIZED)
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
1000
25°C
1
0.1
0.01
V O= 5 V
0.001
V O = 0.2 V
T A = –25°C
10
25°C
75°C
1
0.1
0
1
2
3
4
5
6
7
8
9
V in , INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
10
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
P1–4/7
MUN2111RT1 SERIES
h FE , DC CURRENT GAIN (NORMALIZED)
V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2112RT1
10
I C /I B =10
T A = –25°C
25°C
75°C
1
0.1
0.01
0
20
40
60
1000
V
25°C
100
10
1
10
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
I C , COLLECTOR CURRENT (mA)
2
1
0
10
20
30
40
25°C
75°C
T A = 25°C
T A = –25°C
10
1
0.1
0.01
V O= 5 V
0.001
50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
0
100
Figure 7. V CE(sat) versus I C
4
C ob , CAPACITANCE (pF)
–25°C
I C , COLLECTOR CURRENT (mA)
3
= 10 V
T A =75°C
80
f = 1 MHz
l E= 0 V
CE
V O = 0.2 V
T A = –25°C
25°C
10
75°C
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
P1–5/7
MUN2111RT1 SERIES
h FE , DC CURRENT GAIN (NORMALIZED)
V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2113RT1
1
I C /I B =10
T A = –25°C
25°C
75°C
0.1
0.01
0
10
20
30
T A =75°C
25°C
–25°C
100
10
40
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) versus I C
Figure 13. DC Current Gain
1
100
I C , COLLECTOR CURRENT (mA)
l E= 0 V
T A = 25°C
0.8
25°C
T A = 75°C
f = 1 MHz
0.6
0.4
0.2
0
–25°C
10
1
0.1
0.01
V O= 5 V
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
1000
V O = 0.2 V
T A=–25°C
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
P1–6/7
MUN2111RT1 SERIES
1
I C /I B =10
T A = –25°C
25°C
75°C
0.1
0.01
0
10
20
30
40
h FE , DC CURRENT GAIN (NORMALIZED)
V CE( sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2114RT1
V
160
CE
T A =75°C
= 10V
25°C
140
–25°C
120
100
80
60
40
20
0
1
2
4
6
8
10
15
40
50
60
70
I C , COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
Figure 18. DC Current Gain
80
90 100
100
3.5
I C , COLLECTOR CURRENT (mA)
f = 1 MHz
l E= 0 V
4
T A= 25°C
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
15
20
25
30
35
40
45
50
T A = 75°C
25°C
–25°C
10
V O= 5 V
1
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
12 V
10
V in , INPUT VOLTAGE (VOLTS)
20
I C , COLLECTOR CURRENT (mA)
4.5
C ob , CAPACITANCE (pF)
180
V O = 0.2 V
T A = –25°C
25°C
Typical Application
for PNP BRTs
75°C
1
LOAD
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
Figure 22. Inexpensive, Unregulated Current
Source
P1–7/7
Similar pages