PHILIPS BSW68 Npn switching transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BSW66A; BSW67A; BSW68A
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 05
Philips Semiconductors
Product specification
NPN switching transistors
BSW66A; BSW67A; BSW68A
PINNING
FEATURES
• High current (max. 1 A)
PIN
• High voltage (max. 150 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
• General purpose switching and amplification
• Industrial applications.
1
handbook, halfpage
3
2
DESCRIPTION
2
NPN transistor in a TO-39 metal package.
3
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
PARAMETER
MIN.
TYP.
MAX. UNIT
BSW66A
−
−
100
V
BSW67A
−
−
120
V
BSW68A
−
−
150
V
BSW66A
−
−
100
V
BSW67A
−
−
120
V
BSW68A
−
−
150
V
collector-base voltage
collector-emitter voltage
CONDITIONS
open emitter
open base
IC
collector current (DC)
−
−
1
A
Ptot
total power dissipation
Tcase ≤ 25 °C
−
−
5
W
hFE
DC current gain
IC = 10 mA; VCE = 5 V
30
−
−
IC = 500 mA; VCE = 5 V
30
−
−
fT
transition frequency
IC = 100 mA; VCE = 20 V; f = 100 MHz
−
130
−
MHz
toff
turn-off time
ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA
−
900
−
ns
1997 May 05
2
Philips Semiconductors
Product specification
NPN switching transistors
BSW66A; BSW67A; BSW68A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
BSW66A
−
100
V
BSW67A
−
120
V
−
150
V
BSW66A
−
100
V
BSW67A
−
120
V
−
150
V
−
6
V
−
1
A
−
2
A
−
200
mA
Tamb ≤ 25 °C
−
800
mW
Tcase ≤ 25 °C
BSW68A
VCEO
MIN.
collector-emitter voltage
open base
BSW68A
VEBO
emitter-base voltage
IC
collector current (DC)
open collector
tp ≤ 20 ms
ICM
peak collector current
IBM
peak base current
Ptot
total power dissipation
−
5
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Rth j-c
thermal resistance from junction to case
1997 May 05
CONDITIONS
free air
3
VALUE
UNIT
220
K/W
35
K/W
Philips Semiconductors
Product specification
NPN switching transistors
BSW66A; BSW67A; BSW68A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
hFE
VCEsat
VBEsat
MAX. UNIT
IE = 0; VCB = 50 V
−
−
100
nA
IE = 0; VCB = 50 V; Tj = 150 °C
−
−
50
µA
IE = 0; VCB = 100 V
−
−
100
µA
IE = 0; VCB = 60 V
−
−
100
nA
IE = 0; VCB = 60 V; Tj = 150 °C
−
−
50
µA
IE = 0; VCB = 120 V
−
−
100
µA
IE = 0; VCB = 75 V
−
−
100
nA
collector cut-off current
BSW68A
IEBO
TYP.
collector cut-off current
BSW67A
ICBO
MIN.
collector cut-off current
BSW66A
ICBO
CONDITIONS
emitter cut-off current
DC current gain
IE = 0; VCB = 75 V; Tj = 150 °C
−
−
50
µA
IE = 0; VCB = 150 V
−
−
100
µA
IC = 0; VEB = 3 V
−
−
100
nA
IC = 0; VEB = 6 V
−
−
100
µA
IC = 10 mA
30
−
−
IC = 100 mA
40
−
−
IC = 500 mA
30
−
−
IC = 1 A
10
−
−
−
−
150
VCE = 5 V
collector-emitter saturation voltage IC = 100 mA; IB = 10 mA
base-emitter saturation voltage
mV
IC = 500 mA; IB = 50 mA
−
−
400
mV
IC = 1 A; IB = 150 mA
−
−
1
V
IC = 100 mA; IB = 10 mA
−
−
900
mV
IC = 500 mA; IB = 50 mA
−
−
1.1
V
IC = 1 A; IB = 150 mA
−
−
1.4
V
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
−
20
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0; f = 1 MHz
−
−
300
pF
fT
transition frequency
IC = 100 mA; VCE = 20 V; f = 100 MHz −
130
−
MHz
−
500
−
ns
−
900
−
ns
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
1997 May 05
ICon = 500 mA; IBon = 50 mA;
IBoff = −50 mA
4
Philips Semiconductors
Product specification
NPN switching transistors
BSW66A; BSW67A; BSW68A
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
seating plane
α
j
w M A M B M
B
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
a
mm
6.60
6.35
5.08
OUTLINE
VERSION
SOT5/11
1997 May 05
b
D
D1
j
L
w
α
14.2
12.7
0.2
45°
k
0.48 9.39 8.33 0.85 0.95
0.41 9.08 8.18 0.75 0.75
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
TO-39
5
Philips Semiconductors
Product specification
NPN switching transistors
BSW66A; BSW67A; BSW68A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 05
6
Philips Semiconductors
Product specification
NPN switching transistors
BSW66A; BSW67A; BSW68A
NOTES
1997 May 05
7
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© Philips Electronics N.V. 1997
SCA54
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Date of release: 1997 May 05
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