RMPA2263 i-Lo™ i L o ™ Features General Description ■ 40% WCDMA efficiency at +28 dBm Pout The RMPA2263 Power Amplifier Module (PAM) is Fairchild’s latest innovation in 50 Ohm matched, surface mount modules targeting UMTS/WCDMA/HSDPA applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA2263 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (< +16 dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 50% at 16 dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4 x 4 x 1.5 mm LCC package is pin-compatible and a drop-in replacement for last generation 4 x 4 mm PAMs widely used today, minimizing the design time to apply this performance-enhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF’s InGaP Heterojunction Bipolar Transistor (HBT) process. ■ Linear operation in low-power mode up to +19 dBm ■ Low quiescent current (Iccq): 25 mA in low-power mode ■ Meets UMTS/WCDMA performance requirements ■ Meets HSDPA performance requirements ■ Single positive-supply operation with low power and shutdown modes – 3.4V typical Vcc operation – Low Vref (2.85V) compatible with advanced handset chipsets ■ Compact Lead-free compliant LCC package – (4.0 x 4.0 x 1.5 mm nominal) ■ Industry standard pinout ■ Internally matched to 50 Ohms and DC blocked RF input/ output Device Functional Block Diagram (Top View) MMIC Vcc1 1 RF IN 2 GND 3 Vmode 4 Vref 5 10 Vcc2 INPUT MATCH 9 GND OUTPUT MATCH BIAS/MODE SWITCH 8 RF OUT 7 GND 6 GND 11 (paddle ground on package bottom) ©2004 Fairchild Semiconductor Corporation RMPA2263 i-Lo™ Rev. G 1 www.fairchildsemi.com WCDMA Power Amplifier Module 1920–1980 MHz (Preliminary) WCDMA Power Amplifier Module 1920–1980 MHz ■ 14% WCDMA efficiency (85 mA total current) at +16 dBm Pout RMPA2263 May 2005 PRELIMINARY Symbol Vcc1, Vcc2 Vref Vmode Parameter Supply Voltages Reference Voltage Ratings Units 5.0 V 2.6 to 3.5 V 3.5 V RF Input Power +10 dBm Tstg Storage Temperature -55 to +150 °C Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics1 Symbol f Parameter Operating Frequency Min Typ 1920 Max Units 1980 MHz Comments WCDMA Operation Gp Po Power Gain Linear Output Power 27.5 dB Po=+28dBm, Vmode=0V 23 dB Po=+16dBm, Vmode≥2.0V 28 16 PAEd Itot dBm Vmode=0V dBm Vmode≥2.0V PAEd (digital) @ 28dBm 40 % Vmode=0V PAEd (digital) @ 16dBm 13 % Vmode≥2.0V High Power Total Current 460 mA Low Power Total Current 85 mA Adjacent Channel Leakage Ratio ACLR1 ACLR2 Po=+28dBm, Vmode=0V Po=+16dBm, Vmode≥2.0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH+1 DCDCH ±5.00MHz Offset ±10.0MHz Offset -40 dBc Po=+28dBm, Vmode=0V -46 dBc Po=+16dBm, Vmode≥2.0V -52 dBc Po=+28dBm, Vmode=0V -57 dBc Po=+16dBm, Vmode≥2.0V General Characteristics VSWR NF Rx No Input Impedance 2.0:1 Noise Figure 2.5:1 4 Receive Band Noise Power dB -139 dBm/Hz Po≤+28dBm, 2110 to 2170 MHz 2fo Harmonic Suppression -38 dBc Po≤+28dBm 3fo–5fo Harmonic Suppression -55 dBc Po≤+28dBm dBc Load VSWR≤5.0:1 S Spurious Outputs 2, 3 -60 10:1 Ruggedness with Load Mismatch3 Tc Case Operating Temperature -30 85 No permanent damage °C DC Characteristics Iccq Quiescent Current 25 mA Vmode≥2.0V Iref Reference Current 7 mA Po≤+28dBm Shutdown Leakage Current 1 µA No applied RF signal Icc(off) 5 Notes: 1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted. 2. All phase angles. 3. Guaranteed by design. 2 RMPA2263 i-Lo™ Rev. G www.fairchildsemi.com i L o ™ WCDMA Power Amplifier Module 1920–1980 MHz (Preliminary) Power Control Voltage Pin RMPA2263 Absolute Ratings1 Symbol f Vcc1, Vcc2 Vref Pout Tc Min Operating Frequency Typ 1920 Max Units 1980 MHz Supply Voltage 3.0 3.4 4.2 V Reference Voltage Operating Shutdown 2.7 0 2.85 3.1 0.5 V V Bias Control Voltage Low-Power High-Power 1.8 0 2.0 3.0 0.5 V V +28 +19 dBm dBm +85 °C Linear Output Power High-Power Low-Power +16 Case Operating Temperature -30 DC Turn On Sequence: 1. Vcc1 = Vcc2 = 3.4V (typical) 2. Vref = 2.85V (typical) 3. High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2.0V (Pout < 16dBm) 3 RMPA2263 i-Lo™ Rev. G www.fairchildsemi.com i L o ™ WCDMA Power Amplifier Module 1920–1980 MHz (Preliminary) Vmode Parameter RMPA2263 Recommended Operating Conditions RMPA2263 Evaluation Board Layout 1 3 5 6 6 5 i L o ™ 2 7 5 Materials List Qty Item No. 1 1 G657553-1 V2 Part Number 2 2 5 3 Ref 4 Description Vendor PC Board Fairchild #142-0701-841 SMA Connector Johnson #2340-5211TN Terminals 3M Assembly, RMPA2263 Fairchild 3 5 3 5 (Alt) GRM39X7R102K50V 1000pF Capacitor (0603) Murata ECJ-1VB1H102K 1000pF Capacitor (0603) Panasonic 2 6 C3216X5R1A335M 3.3µF Capacitor (1206) TDK 1 7 GRM39Y5V104Z16V 0.1µF Capacitor (0603) Murata 1 7 (Alt) ECJ-1VB1C104K 0.1µF Capacitor (0603) Panasonic A/R 8 SN63 Solder Paste Indium Corp. A/R 9 SN96 Solder Paste Indium Corp. Evaluation Board Schematic 3.3 µF 1000 pF 1 VCC1 50 Ohm TRL VMODE VREF 50 Ohm TRL SMA2 RF OUT 3, 6, 7, 9 5 11 1000 pF 0.1 µF (PACKAGE BASE) 4 RMPA2263 i-Lo™ Rev. G 8 Z 4 VCC2 10 XYTT 2 2263 SMA1 RF IN 3.3 µF 1000 pF www.fairchildsemi.com WCDMA Power Amplifier Module 1920–1980 MHz (Preliminary) Z XYTT 2263 4 RMPA2263 Package Outline I/O 1 INDICATOR TOP VIEW 10 2 9 i L o ™ 2 7 Z T T XY 2 6 3 6 5 1.60mm MAX. FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .10mm .30mm TYP. .10mm .85mm TYP. 11 3.65mm .40mm .45mm 2 1 1.08mm .18mm 1.84mm DETAIL A. TYP. BOTTOM VIEW Signal Descriptions Pin # Signal Name Description 1 Vcc1 Supply Voltage to Input Stage 2 RF In RF Input Signal 3 GND Ground 4 Vmode High Power/Low Power Mode Control 5 Vref Reference Voltage 6 GND Ground 7 GND Ground 8 RF Out RF Output Signal 9 GND Ground 10 Vcc2 Supply Voltage to Output Stage 11 GND Paddle Ground 5 RMPA2263 i-Lo™ Rev. G www.fairchildsemi.com WCDMA Power Amplifier Module 1920–1980 MHz (Preliminary) 8 Z 4 XYTT 3 2263 (4.00mm +.100 –.050 ) SQUARE 1 CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Precautions to Avoid Permanent Device Damage: • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. Reflow Profile • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200°C. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255–260°C, with a maximum limit of 260°C. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. • Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Device Usage: Fairchild recommends the following procedures prior to assembly. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices. • Assemble the devices within 7 days of removal from the dry pack. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15°C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed. • During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C • If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure, at 125°C for 24 hours minimum, must be performed. Recommended Solder Reflow Profile 260 Temperature (°C) Ramp-Up Rate 3 °C/sec max Peak temp 260 +0/-5 °C 10 - 20 sec 217 200 Time above liquidus temp 60 - 150 sec 150 Preheat, 150 to 200 °C 60 - 180 sec 100 Ramp-Up Rate 3 °C/sec max Ramp-Down Rate 6 °C/sec max 50 25 Time 25 °C/sec to peak temp 6 minutes max Time (Sec) 6 RMPA2263 i-Lo™ Rev. G www.fairchildsemi.com i L o ™ WCDMA Power Amplifier Module 1920–1980 MHz (Preliminary) • Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3°C/sec. RMPA2263 Applications Information The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 7 RMPA2263 i-Lo™ Rev. G www.fairchildsemi.com i L o ™ WCDMA Power Amplifier Module 1920–1980 MHz (Preliminary) ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ RMPA2263 TRADEMARKS