Renesas NE202930-T1 Silicon npn epitaxial high frequency transistor Datasheet

PreliminaryData Sheet
NE202930
Silicon NPN Epitaxial High Frequency Transistor
R09DS0003EJ0100
Rev.1.00
Jul 14, 2010
FEATURES
•
•
•
•
High transition frequency fT = 11 GHz TYP.
Ideal for low noise and low distortion amplification
Suitable for equipments of low collector voltage (Less than 5 V)
Suitable for up to 1 GHz applications
APPLICATIONS
• LNA (Low Noise Amplifier) or power splitter for digital-TV
OUTLINE
RENESAS Package code: 30
(Package name: 3-pin super minimold (30 PKG))
1. Emitter
2. Base
3. Collector
Note: Marking is "R7D"
ORDERING INFORMATION
Part Number
NE202930-T1
Order Number
NE202930-T1-A
Package
3-pin super
minimold (30 PKG)
(Pb-Free)
Marking
R7D
Supplying Form
• Embossed tape 8 mm wide
• Pin 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE202930
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
(Base Short)
VCES
Ratings
9
9
Collector to Emitter Voltage
(Base Open)
Emitter to Base Voltage
Collector Current
Total Power Dissipation Note
Junction Temperature
Storage Temperature
VCEO
6
V
VEBO
IC
Ptot
Tj
Tstg
2
100
150
150
−65 to +150
V
mA
mW
°C
°C
Note:
Symbol
VCBO
Unit
V
V
Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 1 of 6
NE202930
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Symbol
ICBO
IEBO
hFE Note1
fT
⏐S21e⏐2
NF1
Test Conditions
MIN.
TYP.
MAX.
Unit
−
−
85
−
−
140
100
100
205
nA
nA
−
VCE = 5 V, IC = 30 mA, f = 1 GHz
VCE = 5 V, IC = 30 mA, f = 1 GHz
−
11.5
11.0
13.5
−
−
GHz
dB
VCE = 5 V, IC = 5 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
−
1.15
1.5
dB
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 5 V, IC = 5 mA
Noise Figure (2)
NF2
VCE = 5 V, IC = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
1.5
−
dB
Associated Gain (1)
Ga1
VCE = 5 V, IC = 5 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
10.0
12.0
−
dB
Associated Gain (2)
Ga2
VCE = 5 V, IC = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
VCB = 5 V, IE = 0, f = 1 MHz
VCE = 5 V, IC = 30 mA, f = 1 GHz
−
13.5
−
dB
−
13.5
0.6
15.5
0.8
−
pF
dB
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output
Power
Output 3rd Order Intercept Point
Note 2
Cre
MSG Note 3
PO (1 dB)
VCE = 5 V, IC (set) = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
19
−
dBm
OIP3
VCE = 5 V, IC (set) = 30 mA, f = 1 GHz,
Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt
−
32
−
dBm
Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
S21
3. MSG =
S12
hFE CLASSIFICATION
Rank
Marking
hFE Value
YFB
R7D
85 to 205
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 2 of 6
NE202930
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (mW)
200
Free Air
150
100
50
0
25
50
75
100
125
150
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
5
4
6
7
8
9
Ambient Temperature TA (°C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
20
100
Collector Current IC (mA)
10
1
0.1
0.01
0.001
0.0001
0
DC Current Gain hFE
1 000
0.2
0.4
0.6
0.8
10
5
1
2
3
100 μA
90 μA
80 μA
70 μA
60 μA
50 μA
40 μA
30 μA
20 μA
IB = 10 μA
4
5
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
14
VCE = 5 V
100
10
1
0.001
15
0
0
1.0
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
VCE = 5 V
0.01
0.1
1
10
100
Collector Current IC (mA)
12
VCE = 5 V,
f = 1 GHz
10
8
6
4
2
0
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 3 of 6
NE202930
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
15
|S21e|2
10
5
VCE = 5 V,
ICE = 5 mA
0
0.1
1
10
MAG
MSG
16 VCE = 5 V,
f = 1 GHz
14
12
|S21e|2
10
8
6
4
2
0
1
10
100
Frequency f (GHz)
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
15
5
13
4
3
11
2
9
1
7
0
1
Noise Figure NF (dB)
4
VCE = 5 V,
f = 1 GHz,
ZS = Zopt, ZL = 50 Ω
5
100
10
15
VCE = 5 V,
f = 1 GHz,
ZS = ZL = Zopt
13
3
11
2
9
1
7
0
1
5
100
10
Collector Current IC (mA)
OUTPUT POWER, LINEAR GAIN,
COLLECTOR CURRENT vs. INPUT POWER
EACH OUTPUT POWER, IM3
vs. EACH INPUT POWER
30
20
200
VCE = 5 V,
ICE (set) = 30 mA,
f = 1 GHz
150
Pout
GL
10
100
0
50
IC
–10
–20
–10
0
10
0
20
Input Power Pin (dBm)
Each Output Power Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dB)
Collector Current IC (mA)
Collector Current IC (mA)
Noise Figure NF (dB)
MAG
18
40
30
20
10
Associated Gain Ga (dB)
MSG
20
5
Output Power Pout (dBm)
Linear Gain GL (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
Associated Gain Ga (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Pout
0
–10
–20
–30
–40
–50
–60
–70
–80
–30
IM3
–20
–10
0
VCE = 5 V,
ICE (set) = 30 mA,
f = 1 GHz
10
20
30
Each Input Power Pin (each) (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 4 of 6
NE202930
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 5 of 6
NE202930
PACKAGE DIMENSIONS
3-PIN SUPER MINIMOLD (30 PKG) (UNIT: mm)
2.1±0.1
2
3
1
0.3+0.1
–0
2.0±0.2
0.65 0.65
0.3+0.1
–0
1.25±0.1
0 to 0.1
0.9±0.1
0.15+0.1
–0.05
0.3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 6 of 6
Revision History
Rev.
1.00
Date
Jul 14, 2010
NE202930 Data Sheet
Description
Summary
Page
−
First edition issued
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