TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN PNP BDX53 BDX54 BDX53A BDX54A BDX53B BDX54B BDX53C BDX54C ...designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining Vottage*& v <**") - BDX53,BDXS4 60 V (Min) - BDX53ABDXS4A = 80 V (Win) - BDX53B.BDX54B = 100 V(Mln) - BDX53C.BDX54C * Monolithic Construction with Built-in Base-Emitter Shunt Resistor 8 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 60 WATTS MAXIMUM RATINGS Characteristic Symbol BDX63 BDX83A BDX53B BDX43C BDXM BDXMA BDX64B BDXC4C Collector-Emitter Voltage VCEO Collector-Base Voltage vcao Emitter-Base Voltage 45 60 80 100 V 45 60 80 100 V VEBO 5.0 V <c 8.0 12 A 0.2 A 60 0.48 W W/°C Collector Current - Continuous Peak "CM Base Current la Total Power Dissipation eTc=25°C Derate above 25°C PD Operating and Storage Junction Temperature Range Unit TO-220 1 2 3 °C TJ >TSTO -65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 2.08 °C/W PIN1.BA8E Z COLLECTOR 4.COUeCTOM(CASE) DIM FIGURE-1 POWER DERATING A B C D E F *. 1O 25 50 75 100 125 150 G H 1 J K L M 0 MILLIMETERS MIN MAX 14,68 9.78 5.01 13.06 357 2,43. 1.12 0.72 4.22 1.14 2.20 0.33 2,43 3.70 15.31 10.42 6.52 14.82 4.07 3.66 1.38 0.96 4.96 1.38 297 0.55 296 3.90 Tc . TEMPERATURE(«C) NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.. Quality Semi-Conductors BDX53AB.C NPN / BDX54,A,B,C PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise Characteristic noted ) Symbol Min VC«H^ 46 60 80 100 Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining VoHage(1) ( L" 100 mA, l_» 0 ) Collector Cutoff Current ( VC1« 22 V, I.- 0 ) ( VC1» 30 V, l.= 0 ) ( VCI= 40 V, l,= 0 ) ( VCI= 50 V, l,= 0 ) BDX53, BDX54 BDX53A, BDX54A BDX53B, BDX54B BDX53C, BDX54C BDX53, BDXS4 BDXS3A, BDX54A BDX53B, BDX54B BDX53C, BDX54C mA •ceo Collector-Base Cutoff Current ( VCB- Rated Vc.. IB- 0) 'ceo Emitter-Base Cutoff Current (V^S.OV.1^0) IEBO V 0.5 0.5 0.5 0.5 uA 200 mA 2.0 ON CHARACTERISTICS (1) hFE DC Current Gain (I^S.OAVoe-S.OV) 750 Collector-Emitter Saturation Voltag (IC»3.0A, I,- 12mA) Vce,-q Base-Emitter Saturation Voltage (IC*3.0A, IB» 12mA) V*w Diode Forward-Voltage (I F =3.0A) V 2.0 V 2.5 V W 2.5 (1) Pulse Test Pulse Width =300 us, Duty Cycle £ 2.0% INTERNAL SCHEMATIC DIAGRAM BDX53 Series NPN BDX54 Series PNP l_