NTE NTE464 Silicon complementary mosfet transistors enhancement mode for switching application Datasheet

NTE464 (P–Ch) & NTE465 (N–Ch)
Silicon Complementary MOSFET Transistors
Enhancement Mode for Switching Applications
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.56mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–25
–
–
V
VDS = –10V, VGS = 0, TA = +25°C
–
–
–10
nA
VDS = –10V, VGS = 0, TA = +150°C
–
–
–10
µA
VGS = ±30V, VDS = 0
–
–
±10
pA
OFF Characteristics
Drain–Source Breakdown Voltage
Zero–Gate–Voltage Drain Current
Gate Reverse Current
V(BR)DSX ID = –10µA, VGS = 0
IDSS
IGSS
ON Characteristics
Gate Threshold Voltage
VGS(Th)
VDS = –10V, ID = –10µA
–1
–
–5
V
Drain–Source On–Voltage
VDS(on)
ID = –2mA, VGS = –10V
–
–
–1
V
ID(on)
VGS = –10V, VDS = –10V
–3
–
–
mA
On–State Drain Current
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
–
600
Ω
–
–
300
Ω
1000
–
–
µmhos
Small–Signal Characteristics
Drain–Source Resistance
NTE464
rds(on)
VGS = –10V, ID = 0, f = 1kHz
NTE465
Forward Transfer Admittance
|yfs|
VDS = –10V, ID = 2mA, f = 1kHz
Input Capacitance
Ciss
VDS = –10V, VGS = 0, f = 140kHz
–
–
5
pF
Reverse Transfer Capacitance
Crss
VDS = 0, VGS = 0, f = 140kHz
–
–
1.3
pF
Drain–Substrate Capacitance
NTE464
Cd(sub)
VD(SUB) = –10V, f = 140kHz
–
–
4
pF
–
–
5
pF
–
–
45
ns
tr
–
–
65
ns
td2
–
–
60
ns
tf
–
–
100
ns
NTE465
Switching Characteristics
Turn–On Delay
Rise Time
Turn–Off Delay
Fall Time
td1
ID = –2mA, VDS = –10V, VGS = –10V
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Gate
Source
Drain
45°
Case
.040 (1.02)
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