PHILIPS BYQ30EB-150 Rectifier diodes ultrafast, rugged Datasheet

Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
GENERAL DESCRIPTION
Glass passivated high efficiency
rugged dual rectifier diodes in a
plastic envelope suitable for surface
mounting, featuring low forward
voltage drop, ultra-fast recovery
times
and
soft
recovery
characteristic. These devices can
withstand reverse voltage transients
and have guaranteed reverse surge
and ESD capability. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
PINNING - SOT404
PIN
BYQ30EB series
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BYQ30EBRepetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
Repetitive peak reverse
current per diode
VRRM
VF
IO(AV)
trr
IRRM
PIN CONFIGURATION
MAX.
MAX.
MAX.
UNIT
100
100
150
150
200
200
V
0.95
16
0.95
16
0.95
16
V
A
25
0.2
25
0.2
25
0.2
ns
A
SYMBOL
DESCRIPTION
mb
1
no connection
2
cathode
3
anode
mb
k
tab
a
3
2
cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VRRM
VRWM
VR
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
IO(AV)
Output current (both diodes
conducting)1
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
IO(RMS)
IFRM
IFSM
I2t
IRRM
IRSM
Tstg
Tj
CONDITIONS
MIN.
-
square wave
δ = 0.5; Tmb ≤ 104 ˚C
t = 25 µs; δ = 0.5;
Tmb ≤ 104 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
I2t for fusing
t = 10 ms
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode
Non-repetitive peak reverse
tp = 100 µs
current per diode
Storage temperature
Operating junction temperature
MAX.
-100
100
100
100
-150
150
150
150
UNIT
-200
200
200
200
V
V
V
-
16
A
-
23
16
A
A
-
100
110
A
A
-
50
0.2
A2s
A
-
0.2
A
-40
-
150
150
˚C
˚C
1 Neglecting switching and reverse current losses.
October 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EB series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
MAX.
UNIT
-
8
kV
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
per diode
both diodes conducting
minimum footprint, FR4 board
Rth j-a
MIN.
TYP.
MAX.
UNIT
-
50
3.0
2.5
-
K/W
K/W
K/W
MIN.
TYP.
MAX.
UNIT
-
0.83
1.0
0.98
0.3
2
0.95
1.15
1.25
0.6
30
V
V
mA
µA
MIN.
TYP.
MAX.
UNIT
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage (per diode)
IR
Reverse current (per diode)
IF = 8 A; Tj = 150˚C
IF = 16 A; Tj = 150˚C
IF = 16 A;
VR = VRWM; Tj = 100 ˚C
VR = VRWM
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
Qs
Reverse recovery charge (per
diode)
Reverse recovery time (per
diode)
Peak reverse recovery current
(per diode)
Forward recovery voltage (per
diode)
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
-
4
11
nC
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 50 A/µs; Tj = 100 ˚C
IF = 1 A; dIF/dt = 10 A/µs
-
20
25
ns
-
1.0
2
A
-
1
-
V
trr
Irrm
Vfr
October 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
I
dI
F
BYQ30EB series
12
F
dt
I
R
rr
120
1.9
8
2.8
132
4
4
138
2
144
100%
10%
s
126
2.2
6
0
rrm
Fig.1. Definition of trr, Qs and Irrm
I
114
a = 1.57
time
Q
Tmb(max) / C
Vo = 0.75 V
Rs 0.025 Ohms
10
t
I
Forward dissipation, PF (W) BYQ30
0
1
2
3
4
5
6
Average forward current, IF(AV) (A)
7
150
8
Fig.4. Maximum forward dissipation PF = f(IF(AV))per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
trr / ns
F
1000
IF=10A
100
time
IF=1A
VF
10
V
fr
VF
1
1
10
dIF/dt (A/us)
time
Fig.2. Definition of Vfr
12
10
Fig.5. Maximum trr at Tj = 25 ˚C.
Forward dissipation, PF (W) BYQ30
Tmb(max) / C
Vo = 0.75 V
Rs = 0.025 Ohms
D = 1.0
126
0.2
0.1
6
tp
D=
2
0
2
4
6
8
Average forward current, IF(AV) (A)
tp
T
t
T
0
IF=1A
10
138
10
144
150
12
1
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
October 1997
IF=10A
100
132
I
4
trr / ns
1000
114
120
0.5
8
100
1
10
dIF/dt (A/us)
100
Fig.6. Maximum trr at Tj = 100 ˚C.
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
10
BYQ30EB series
Irrm / A
100 Qs / nC
IF=10A
5A
2A
1A
IF=10A
1
IF=1A
10
0.1
1.0
0.01
10
-dIF/dt (A/us)
1
100
1.0
Fig.7. Maximum Irrm at Tj = 25 ˚C.
10
10
-dIF/dt (A/us)
100
Fig.10. Maximum Qs at Tj = 25 ˚C.
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=10A
1
1
IF=1A
0.1
0.1
PD
tp
t
0.01
10
-dIF/dt (A/us)
1
0.01
10 us
100
Fig.8. Maximum Irrm at Tj = 100 ˚C.
20
Forward current, IF (A)
1 ms
0.1 s
pulse width, tp (s)
10 s
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
BYQ30
Tj = 25 C
Tj = 150 C
15
10
typ
max
5
0
0
0.5
1
1.5
Forward voltage, VF (V)
2
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
October 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EB series
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.12. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.13. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
October 1997
5
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EB series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997
6
Rev 1.000
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