MOTOROLA 2N4037

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by 2N4036/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
2N4036
2N4037
Unit
Collector – Emitter Voltage
VCEO
– 65
– 40
Vdc
Collector – Base Voltage
VCBO
– 90
– 60
Vdc
Emitter – Base Voltage
VEBO
– 7.0
– 7.0
Vdc
Base Current
IB
– 0.5
Adc
Collector Current — Continuous
IC
– 1.0
Adc
Continuous Power Dissipation
at or Below TC = 25°C
Linear Derating Factor
PD
Continuous Power Dissipation
at or Below TA = 25°C
Linear Derating Factor
PD
Operating and Storage Junction
Temperature Range
5.0
28.6
Watts
mW/°C
1.0
5.72
1.0
5.72
Watts
mW/°C
– 65 to +200
°C
TL
230
°C
2
1
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
5.0
28.6
TJ, Tstg
Lead Temperature
1/16″ from Case for 10 Seconds
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
2N4036
2N4037
Unit
RqJC
35
35
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
– 65
– 40
—
—
– 60
—
—
—
– 0.1
– 100
—
—
– 1.0
– 0.25
—
—
– 10
– 1.0
Unit
OFF CHARACTERISTICS
Collector – Emitter Sustaining Voltage(1)
(IC = – 100 mAdc, IB = 0)
VCEO(sus)
2N4036
2N4037
Collector – Base Breakdown Voltage
(IC = – 0.1 mAdc)
2N4037
Collector Cutoff Current
(VCE = – 85 Vdc, VEB = – 1.5 Vdc)
(VCE = – 30 Vdc, VEB = – 1.5 Vdc, TC = 150°C)
2N4036
2N4037
Collector Cutoff Current
(VCB = – 90 Vdc, IE = 0)
(VCB = – 60 Vdc, IE = 0)
2N4036
2N4037
Emitter Cutoff Current
(VEB = – 7.0 Vdc, IC = 0)
(VEB = – 5.0 Vdc, IC = 0)
2N4036
2N4037
1. Pulse Test: Pulse Width
V(BR)CBO
Vdc
ICEX
mAdc
µAdc
ICBO
µAdc
IEBO
v 300 ms, Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
Vdc
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
2N4036
20
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = – 0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
hFE
—
2N4037
15
—
(IC = –150 mAdc, VCE = –10 Vdc)(1)
2N4036
2N4037
40
50
140
250
(IC = –150 mAdc, VCE = – 2.0 Vdc)(1)
(IC = – 500 mAdc, VCE = –10 Vdc)(1)
2N4036
2N4036
20
200
20
—
VCE(sat)
—
—
– 0.65
– 1.4
Vdc
VBE(sat)
—
–1.4
Vdc
VBE(on)
—
– 1.5
Vdc
Ccb
—
30
pF
|hfe|
3.0
3.0
—
10
—
tr
—
70
ns
ts
—
600
ns
tf
—
100
ns
ton
—
110
ns
toff
—
700
ns
Collector – Emitter Saturation Voltage(1)
(IC = – 150 mAdc, IB = – 15 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = – 150 mAdc, IB = – 15 mAdc)
Base – Emitter On Voltage(1)
(IC = – 150 mAdc, VCE = – 10 Vdc)
2N4036
2N4037
2N4036
2N4037
SMALL– SIGNAL CHARACTERISTICS
Collector–Base Capacitance
(VCB = – 10 Vdc, f = 1.0 MHz)
2N4037
Current Gain — High Frequency
(IC = – 50 mAdc, VCE = – 10 Vdc, f = 20 MHz)
2N4036
2N4037
SWITCHING CHARACTERISTICS
Rise Time
(IB1 = – 15 mAdc)
2N4036
Storage Time
(IB2 = – 15 mAdc)
2N4036
Fall Time
(IB2 = – 15 mAdc)
2N4036
Turn–On Time
(IB1 = IB2)
2N4036
Turn–Off Time
(IB1 = IB2)
2N4036
1. Pulse Test: Pulse Width
2
v 300 ms, Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
hFE , NORMALIZED DC CURRENT GAIN
10
VCE = – 10 V
AMBIENT TEMPERATURE (TA) = 25°C
1.0
0.1
– 0.1
– 1.0
– 10
IC, COLLECTOR CURRENT (mA)
PT, MAXIMUM TRANSISTOR DISSIPATION (W)
(AT TA)
7.0
6.0
5.0
4.0
3.0
2.0
(AT TC)
1.0
0
– 75
– 100
– 25 0
50
100
150
200
CASE OR AMBIENT TEMPERATURE (TC OR TA) – °C
COLLECTOR–TO–BASE
VOLTAGE – 40 V
– 20 V
–10– 5
–10– 6
–10– 7
–10– 8
–10– 9
–10–10
0
25
50
Figure 2. Dissipation Derating Curve
IC, COLLECTOR CURRENT (mA)
I CBO , COLLECTOR CUTOFF CURRENT (mA)
Figure 1. Current Gain Characteristics versus
Collector–Emitter Voltage
COLLECTOR CURRENT (IC) = 10
BASE CURRENT (IB)
– 600
AMBIENT TEMPERATURE (TA) = 25°C
– 400
– 200
0
75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE (°C)
– 0.5
– 0.15
– 0.25
– 0.35
VCE(sat), COLLECTOR–TO–EMITTER SATURATION VOLTAGE (V)
10
COLLECTOR–TO–EMITTER VOLTAGE
(VCE) = –10 V
FREQUENCY = 20 MHz
AMBIENT TEMPERATURE (TA) = 25°C
8.0
6.0
4.0
Figure 4. Typical Saturation–Voltage
Characteristics
1.0
IC, COLLECTOR CURRENT (A)
hFE, SMALL–SIGNAL FORWARD
CURRENT TRANSFER RATIO
Figure 3. Typical Collector–Cutoff Current
versus Junction Temperature
– 0.1
IC MAX.
(CONTINUOUS)
50 µs
100 µs
300 µs
500 µs
1.0 ms
DC OPERATION
CASE TEMPERATURE (TC) = 25°C
(CURVES MUST BE DERATED LINEARLY
WITH INCREASE OF TEMPERATURE)
VCEO MAX = 40 V
(2N4037)
2.0
0
– 1.0
– 10
– 100
– 1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Typical Small–Signal Beta
Characteristics
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PULSED OPERATION*
9.3
7.0
5.0
– 0.01
– 1.0
NORMALIZED
POWER
MULTIPLIER
3.0
2.0
1.0
VCEO MAX = – 65 V
(2N4036)
*FOR SINGLE
NONREPETITIVE PULSE
– 100
– 10
VCE, COLLECTOR–TO–EMITTER VOLTAGE (V)
Figure 6. Maximum Safe Operating Areas
(SOA)
3
PACKAGE DIMENSIONS
–A–
R
B
C
–T–
E
SEATING
PLANE
L
F
K
P
D 3 PL
0.36 (0.014)
M
T A
H
M
M
2
–H–
1
3
G
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
M
J
CASE 079–04
(TO–205AD)
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION J MEASURED FROM DIMENSION A
MAXIMUM.
4. DIMENSION B SHALL NOT VARY MORE THAN
0.25 (0.010) IN ZONE R. THIS ZONE
CONTROLLED FOR AUTOMATIC HANDLING.
5. DIMENSION F APPLIES BETWEEN DIMENSION
P AND L. DIMENSION D APPLIES BETWEEN
DIMENSION L AND K MINIMUM. LEAD
DIAMETER IS UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
E
F
G
H
J
K
L
M
P
R
INCHES
MIN
MAX
0.335
0.370
0.305
0.335
0.240
0.260
0.016
0.021
0.009
0.041
0.016
0.019
0.200 BSC
0.028
0.034
0.029
0.045
0.500
0.750
0.250
–––
45 _BSC
–––
0.050
0.100
–––
MILLIMETERS
MIN
MAX
8.51
9.39
7.75
8.50
6.10
6.60
0.41
0.53
0.23
1.04
0.41
0.48
5.08 BSC
0.72
0.86
0.74
1.14
12.70
19.05
6.35
–––
45 _BSC
–––
1.27
2.54
–––
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4
◊
2N4036/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data