SEMTECH MA700 Silicon epitaxial planar type schottky barrier diode Datasheet

MA700, MA700A
SILICON EPITAXIAL PLANAR TYPE
SCHOTTKY BARRIER DIODES
Max. 0.5
Max. 0.45
for ordinary wave detection
for super high speed switching
Min. 27.5
Max. 1.9
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
Black
Cathode Band
Black
Part No.
Features
XXX
Min. 27.5
Max. 1.9
Max. 2.9
XXX
Max. 3.9
ST
• Low forward rise voltage (VF) and satisfactory wave
• detection efficiency (η)
Min. 27.5
Min. 27.5
• Small temperature coefficient of forward characteristic
• Extremely low reverse current (IR)
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Glass Case DO-35
Dimensions in mm
Symbol
Value
Unit
Peak Reverse Voltage
MA700
MA700A
VRM
15
30
V
Reverse Voltage
MA700
MA700A
VR
15
30
V
Forward Current
IF
30
mA
Peak Forward Current
IFM
150
mA
Junction Temperature
Tj
125
O
Storage Temperature Range
TS
- 55 to + 125
O
C
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Typ.
Max.
Unit
VF
-
0.4
1
V
IR
-
600
600
nA
Terminal Capacitance
at VR = 1 V, f = 1 MHz
CT
1.3
-
pF
Reverse Recovery Time
at IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω
trr
1
-
ns
Detection Efficiency
at Vin = 3 V(peak), f = 30 MHz, RL = 3.9 KΩ, CL = 10 pF
η
60
-
%
Forward Voltage
at IF = 1 mA
at IF = 30 mA
Reverse Current
at VR = 15 V
at VR = 30 V
MA700
MA700A
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/08/2007
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