AOSMD AON7430 30v n-channel mosfet Datasheet

AON7430
30V N-Channel MOSFET
General Description
Features
The AON7430 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
VDS (V) = 30V
ID = 34A
(VGS = 10V)
RDS(ON) < 12mΩ
(VGS = 10V)
RDS(ON) < 16mΩ
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Top View
D
Bottom
Top View
1
8
2
7
3
6
4
5
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current A
Maximum
30
Units
V
±20
V
34
TC=100°C
C
ID
21
IDM
80
TA=25°C
A
13
A
IDSM
10.2
Avalanche Current C
IAR
22
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
24
mJ
Power Dissipation B
TA=70°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Maximum Junction-to-Case B
Rev 3: Feb 2010
3.1
W
2
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
9
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
23
PD
TC=100°C
RθJA
RθJC
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Typ
30
60
4.5
°C
Max
40
75
5.4
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7430
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.5
VGS=10V, VDS=5V
80
TJ=55°C
5
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
100
nA
2.5
V
10
12
16
19
13
16
mΩ
1
V
25
A
A
Forward Transconductance
VDS=5V, ID=20A
45
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
µA
1.9
gFS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
Zero Gate Voltage Drain Current
RDS(ON)
Max
30
VDS=30V, VGS=0V
IDSS
ID(ON)
Typ
mΩ
S
610
760
910
pF
88
125
160
pF
40
70
100
pF
0.8
1.6
2.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
11
14
17
nC
Qg(4.5V) Total Gate Charge
5
6.6
8
nC
1.9
2.4
2.9
nC
1.8
3
4.2
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=20A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
5.6
7
8
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
6.4
8
9.6
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4.4
ns
9
ns
17
ns
6
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: Feb 2010
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Page 2 of 6
AON7430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
30
5V
10V
4.5
VDS=5V
25
6V
60
4V
40
ID(A)
ID (A)
20
15
3.5V
10
125°C
20
VGS=3V
5
25°C
0
0
0
1
2
3
4
1
5
1.5
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
18
Normalized On-Resistance
1.8
16
RDS(ON) (mΩ )
2
VGS=4.5V
14
12
10
VGS=10V
8
VGS=10V
ID=20A
1.6
1.4
17
5
VGS=4.5V 2
ID=20A 10
1.2
1
0.8
6
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18
Temperature
35
1.0E+02
ID=20A
1.0E+01
30
40
1.0E+00
IS (A)
RDS(ON) (mΩ )
25
125°C
20
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
15
1.0E-04
10
25°C
1.0E-05
5
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev 3: Feb 2010
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0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
AON7430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=15V
ID=20A
1000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
400
Coss
Crss
0
0
2
4
6
8
10
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
14
0
10µs
100.0
RDS(ON)
limited
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
160
30
100µs
1ms
10ms
DC
1.0
17
5
2
10
120
80
40
TJ(Max)=150°C
TC=25°C
0.0
0.01
TJ(Max)=150°C
TC=25°C
10µs
Power (W)
10.0
0.1
5
200
1000.0
ID (Amps)
600
200
0
0.1
1
VDS (Volts)
10
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
800
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=5.4°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 3: Feb 2010
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Page 4 of 6
AON7430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
ID(A), Peak Avalanche Current
30
Power Dissipation (W)
TA=25°C
TA=100°C
TA=150°C
TA=125°C
25
20
15
10
5
0
10
1
0
10
100
1000
µs)
Time in avalanche, tA (µ
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
125
150
10000
40
35
TA=25°C
1000
30
Power (W)
Current rating ID(A)
100
TCASE (°C)
Figure 13: Power De-rating (Note F)
25
20
15
17
5
2
10
100
10
10
5
1
0.00001
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
150
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 3: Feb 2010
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Page 5 of 6
AON7430
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 3: Feb 2010
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6
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