Zetex FMMT38C Npn silicon planar medium power darlington transistor Datasheet

FMMT38A
FMMT38B
FMMT38C
ISSUE 3 – AUGUST 1996
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
TYPICAL CHARACTERISTICS
1.6
hFE - Normalised Gain
1.0
VCE(sat) - (Volts)
VCE=5V
IC/IB=100
-55°C
0.8
+25°C
0.6
+100°C
0.4
+175°C
0.2
0.001
0.01
0.1
1
0.6
-55°C
0.2
0.001
IC - Collector Current (Amps)
0.01
0.1
hFE v IC
-55°C
1.5
+25°C
+100°C
-55°C
+25°C
1.0
0.5
0.01
0.1
1
0.5
0.001
10
+100°C
+175°C
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
10
1
IC - Collector Current (A)
Thermal Resistance (°C/W)
D=1 (D.C.)
150
100
50
0
0.0001
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
0.001
0.01
100m
10m
DC
1s
100ms
10ms
1ms
100us
1
10
UNIT
80
V
Collector-Emitter Voltage
V CEO
60
V
Emitter-Base Voltage
V EBO
10
V
Peak Pulse Current
I CM
800
mA
Continuous Collector Current
IC
300
mA
Power Dissipation at T amb=25°C
P tot
330
mW
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
100
100m
1
10
Pulse Width (seconds)
VCE - Collector Emitter Voltage (V)
Maximum transient thermal impedance
3 - 101
Safe Operating Area
100
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V (BR)CBO
80
V
I C=10 A, I E=0
Collector-Emitter
Sustaining Voltage
V CEO(sus)
60
V
I C=10mA, I B=0
Emitter-Base
Breakdown Voltage
V (BR)EBO
10
V
I E=10 A, I C=0
Collector Cut-Off
Current
I CBO
100
nA
V CB=60V, I E=0
Emitter Cut-Off Current
I EBO
100
nA
V EB=8V, I C=0
Collector-Emitter
Saturation Voltage
V CE(sat)
1.25
V
I C=800mA, I B=8mA*
Base-Emitter
Turn-on Voltage
V BE(on)
1.8
V
I C=800mA, V CE=5V*
Static
Forward
Current
Transfer
Ratio
1m
0.1
VALUE
V CBO
PARAMETER
1.5
+175°C
0.001
SYMBOL
Collector-Base Voltage
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
2.0
1.0
PARAMETER
VCE=5V
IC/IB=100
VBE - (Volts)
VBE(sat) - (Volts)
10
1
IC - Collector Current (Amps)
VCE(sat) v IC
2.0
B
ABSOLUTE MAXIMUM RATINGS.
+25°C
0.8
0.4
E
C
FMMT38A – 4J
FMMT38B – 5J
FMMT38C – 7J
1.2
0
10
PARTMARKING DETAILS –
+100°C
1.4
1.0
FMMT38A
FMMT38B
FMMT38C
SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
FMMT38A h FE
500
1000
I C=100mA, V CE=5V*
I C=500mA, V CE=5V*
FMMT38B
2000
4000
I C=100mA, V CE=5V*
I C=500mA, V CE=5V*
FMMT38C
5000
10000
I C=100mA, V CE=5V*
I C=500mA, V CE=5V*
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 100
FMMT38A
FMMT38B
FMMT38C
ISSUE 3 – AUGUST 1996
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
TYPICAL CHARACTERISTICS
1.6
hFE - Normalised Gain
1.0
VCE(sat) - (Volts)
VCE=5V
IC/IB=100
-55°C
0.8
+25°C
0.6
+100°C
0.4
+175°C
0.2
0.001
0.01
0.1
1
0.6
-55°C
0.2
0.001
IC - Collector Current (Amps)
0.01
0.1
hFE v IC
-55°C
1.5
+25°C
+100°C
-55°C
+25°C
1.0
0.5
0.01
0.1
1
0.5
0.001
10
+100°C
+175°C
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
10
1
IC - Collector Current (A)
Thermal Resistance (°C/W)
D=1 (D.C.)
150
100
50
0
0.0001
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
0.001
0.01
100m
10m
DC
1s
100ms
10ms
1ms
100us
1
10
UNIT
80
V
Collector-Emitter Voltage
V CEO
60
V
Emitter-Base Voltage
V EBO
10
V
Peak Pulse Current
I CM
800
mA
Continuous Collector Current
IC
300
mA
Power Dissipation at T amb=25°C
P tot
330
mW
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
100
100m
1
10
Pulse Width (seconds)
VCE - Collector Emitter Voltage (V)
Maximum transient thermal impedance
3 - 101
Safe Operating Area
100
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V (BR)CBO
80
V
I C=10 A, I E=0
Collector-Emitter
Sustaining Voltage
V CEO(sus)
60
V
I C=10mA, I B=0
Emitter-Base
Breakdown Voltage
V (BR)EBO
10
V
I E=10 A, I C=0
Collector Cut-Off
Current
I CBO
100
nA
V CB=60V, I E=0
Emitter Cut-Off Current
I EBO
100
nA
V EB=8V, I C=0
Collector-Emitter
Saturation Voltage
V CE(sat)
1.25
V
I C=800mA, I B=8mA*
Base-Emitter
Turn-on Voltage
V BE(on)
1.8
V
I C=800mA, V CE=5V*
Static
Forward
Current
Transfer
Ratio
1m
0.1
VALUE
V CBO
PARAMETER
1.5
+175°C
0.001
SYMBOL
Collector-Base Voltage
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
2.0
1.0
PARAMETER
VCE=5V
IC/IB=100
VBE - (Volts)
VBE(sat) - (Volts)
10
1
IC - Collector Current (Amps)
VCE(sat) v IC
2.0
B
ABSOLUTE MAXIMUM RATINGS.
+25°C
0.8
0.4
E
C
FMMT38A – 4J
FMMT38B – 5J
FMMT38C – 7J
1.2
0
10
PARTMARKING DETAILS –
+100°C
1.4
1.0
FMMT38A
FMMT38B
FMMT38C
SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
FMMT38A h FE
500
1000
I C=100mA, V CE=5V*
I C=500mA, V CE=5V*
FMMT38B
2000
4000
I C=100mA, V CE=5V*
I C=500mA, V CE=5V*
FMMT38C
5000
10000
I C=100mA, V CE=5V*
I C=500mA, V CE=5V*
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 100
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