Order this document
by BD157/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for power output stages for television, radio, phonograph and other
consumer product applications.
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 – 300 – 350 VOLTS
20 WATTS
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• Suitable for Transformerless, Line–Operated Equipment
• Thermopad{ Construction Provides High Power Dissipation Rating for High
Reliability
MAXIMUM RATINGS
Rating
Symbol
BD 157
BD 158
BD 159
Unit
VCEO
250
300
350
Vdc
Collector–Base Voltage
VCB
275
325
375
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
0.5
1.0
Adc
Base Current
IB
0.25
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
20
0.16
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
θJC
6.25
_C/W
Collector–Emitter Voltage
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 77–08
TO–225AA TYPE
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Type
Min
Max
Unit
BVCEO
BD 157
BD 158
BD 159
250
300
350
—
Vdc
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
Collector Cutoff Current
(At rated voltage)
ICBO
—
100
µAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
—
100
µAdc
hFE
30
240
—
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
REV 7
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
1.0
20
V, VOLTAGE (VOLTS)
PD, POWER DISSIPATION (WATTS)
25
15
0.8
VBE @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
VCE(sat) @ IC/IB = 10
10
0.2
TJ = + 25°C
IC/IB = 5.0
5.0
0
20
40
60
80
100
120
140
160
0
20
10
TC, CASE TEMPERATURE (°C)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Power–Temperature Derating Curve
1.0
0.7
0.5
500 µs
0.1
0.07
0.05
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
BD157
BD158
BD159
0.03
0.02
0.01
10
Figure 2. “On” Voltages
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To
insure operation below, the maximum TJ, power–temperature derating must be observed for both steady state and
pulse power conditions.
dc
0.2
500
10 µs
1.0 ms
TJ = 150°C
0.3
30
50
100
200 300
IC, COLLECTOR CURRENT (mA)
20
30
50
100
200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
300
Figure 3. DC Safe Operating Area
300
VCE = 10 V
VCE = 2.0 V
hFE, DC CURRENT GAIN
200
TJ = 150°C
100
+ 100°C
70
50
+ 25°C
30
– 55°C
20
10
1.0
2.0
3.0
5.0
7.0
10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
70
100
200
300
500
Figure 4. Current Gain
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
–––
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
–––
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77–08
TO–225AA TYPE
ISSUE V
Motorola Bipolar Power Transistor Device Data
3
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4
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Motorola Bipolar Power Transistor Device Data
*BD157/D*
BD157/D