MOTOROLA BDC05

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by BDC05/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
300
Vdc
Collector – Base Voltage
VCBO
300
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
50
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
300
—
300
—
5.0
—
—
0.01
—
10
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
Vdc
Vdc
Vdc
µAdc
µAdc
1
BDC05
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
40
—
—
2.0
—
2.0
60
—
—
2.8
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mAdc, VCE = 20 Vdc)
hFE
—
Collector–Emitter Saturation Voltage(1)
(IC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT
Collector–Base Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
Cre
v 300 ms; Duty Cycle v 2.0%.
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
1. Pulse Test: Pulse Width
200
hFE, DC CURRENT GAIN
VCE = 10 V
100
TJ = 125°C
25°C
70
–55°C
50
30
20
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
2
MHz
50
70 100
pF
0.6
0.5
TJ = 25°C
0.4
IC = 30 mA
0.3
IC = 20 mA
0.2
0.1
0
0.1
IC = 10 mA
0.2
0.5
1.0
10
2.0
5.0
IB, BASE CURRENT (mA)
20 30
Figure 2. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BDC05
TJ = 25°C
1.2
V, VOLTAGE (VOLTS)
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
1.4
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
0.4
5.0
0.2
0
1.0
VCE(sat) @ IC/IB = 10
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
70 100
50
2.5
2.0
IC
IB
1.5
0.5
RθVC for VCE(sat)
0
–55°C to 25°C
–0.5
–1.0
–55°C to 125°C
–1.5
RθVB for VBE
–2.0
–2.5
1.0
2.0
20
Ccb
3.0
2.0
1.0
0.2
0.5
1.0 2.0
5.0
10 20
50
VR, REVERSE VOLTAGE (VOLTS)
100
200
Figure 5. Capacitance
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
Ceb
10
7.0
5.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70
100
Figure 4. Temperature Coefficients
TJ = 25°C
30
25°C to 125°C
1.0
Figure 3. “On” Voltages
100
70
50
+ 10
100
70
50
TJ = 25°C
VCE = 20 V
f = 20 MHz
30
20
10
1.0
2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 6. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
1k
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
500
1.0 ms
200
1.0 s
100 µs
100
50
TA = 25°C
20
DUTY CYCLE ≤ 10%
10
10
20
50
100
200 300
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BDC05
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
P
L
F
K
X X
D
G
H
J
V
N C
1 2 3
SECTION X–X
N
CASE 029–05
(TO–226AE)
ISSUE AD
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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4
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Motorola Small–Signal Transistors, FETs and Diodes Device
Data
BDC05/D