MOTOROLA BF721T1

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by BF721T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
COLLECTOR 2,4
PNP SILICON
TRANSISTOR
SURFACE MOUNT
BASE
1
EMITTER 3
MAXIMUM RATINGS
4
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
– 300
Vdc
Collector-Base Voltage
VCBO
–300
Vdc
Collector-Emitter Voltage
VCER
– 300
Vdc
Emitter-Base Voltage
VEBO
– 5.0
Vdc
Collector Current
IC
–100
mAdc
Total Power Dissipation up to
TA = 25°C(1)
PD
1.5
Watts
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
150
°C
Symbol
Max
Unit
RθJA
83.3
°C/W
Junction Temperature
1
2
3
CASE 318E-04, STYLE 1
SOT–223 (TO-261AA)
DEVICE MARKING
DF
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance from Junction to
Ambient(1)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
– 300
—
Vdc
Collector-Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
V(BR)CBO
–300
—
Vdc
Collector-Emitter Breakdown Voltage
(IC = –100 µAdc, RBE = 2.7 kΩ)
V(BR)CER
–300
—
Vdc
Emitter-Base Breakdown Voltage
(IE = –10 µAdc, IC = 0)
V(BR)EBO
– 5.0
—
Vdc
Collector-Base Cutoff Current
(VCB = – 200 Vdc, IE = 0)
ICBO
—
–10
nAdc
Collector–Emitter Cutoff Current
(VCE = – 250 Vdc, RBE = 2.7 kΩ)
(VCE = – 200 Vdc, RBE = 2.7 kΩ, TJ = 150°C)
ICER
—
—
–50
–10
nAdc
µAdc
OFF CHARACTERISTICS
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
Small–Signal
Motorola
Motorola, Inc.
1996
Transistors, FETs and Diodes Device Data
1
BF721T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
hFE
50
—
—
VCE(sat)
—
– 0.8
Vdc
fT
60
—
MHz
Cre
—
1.6
pF
ON CHARACTERISTICS
DC Current Gain
(VCE = –25 mAdc, VCE = –20 Vdc)
Collector-Emitter Saturation Voltage
(IC = – 30 mAdc, IB = – 5.0 mAdc)
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(VCE = – 10 Vdc, IC = –10 mAdc, f = 35 MHz)
Feedback Capacitance
(VCE = – 30 Vdc, IC = 0, f = 1.0 MHz)
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BF721T1
INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE
POWER DISSIPATION
The power dissipation of the SOT-223 is a function of the
pad size. These can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device
junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet for the SOT-223
package, PD can be calculated as follows.
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 1.5 watts.
PD =
150°C – 25°C
83.3°C/W
= 1.5 watts
The 83.3°C/W for the SOT-223 package assumes the
recommended collector pad area of 965 sq. mils on a glass
epoxy printed circuit board to achieve a power dissipation of
1.5 watts. If space is at a premium, a more realistic
approach is to use the device at a PD of 833 mW using the
footprint shown. Using a board material such as Thermal
Clad, a power dissipation of 1.6 watts can be achieved using
the same footprint.
MOUNTING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.15
3.8
0.079
2.0
0.248
6.3
0.091
2.3
0.091
2.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
inches
mm
SOT–223
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BF721T1
PACKAGE DIMENSIONS
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
S
B
1
2
3
D
L
G
J
C
0.08 (0003)
M
H
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0_
10 _
S
0.264
0.287
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0_
10 _
6.70
7.30
K
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 318E–04
ISSUE H
TO-261AA
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4
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*BF721T1/D*
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
BF721T1/D