Order this document by BU323A/D SEMICONDUCTOR TECHNICAL DATA The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at –40_C = 2.0 V Max. at IC = 6 A. • Photoglass Passivation for Reliability and Stability. 16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN SILICON 400 VOLTS 175 WATTS BASE ≈1k ≈ 30 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v CASE 1–07 TO–204AA (TO–3) EMITTER MAXIMUM RATINGS Rating Symbol Value Unit VCEO(sus) 400 Vdc Collector–Base Voltage VCBO 600 Vdc Emitter–Base Voltage VEBO 8.0 Vdc IC 10 16 Adc Collector–Emitter Voltage Collector Current — Continuous Peak (1) Base Current — Continuous IB 3.0 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C PD 175 100 1.0 Watts Watts W/_C TJ, Tstg – 65 to + 200 _C Symbol Max Unit RθJC 1.0 _C/W TL 275 _C Operating and Storage Junction THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 3–231 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BU323A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS1 Collector–Emitter Sustaining Voltage (Figure 1) L = 10 mH (IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO) VCEO(sus) Collector–Emitter sustaining Voltage (Figure 1) (IC = 3 A, RBE = 100 Ohms, L = 500 µH) Unclamped VCER(sus) Vdc 400 Vdc 475 Collector Cutoff Current (Rated VCER, RBE = 100 Ohms) ICER 1 mAdc Collector Cutoff Current (Rated VCBO, IE = 0) Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) ICBO 1 mAdc IEBO 40 mAdc ON CHARACTERISTICS1 DC Current Gain (IC = 3 Adc, VCE = 6 Vdc) (IC = 6 Adc, VCE = 6 Vdc) (IC = 10 Adc, VCE = 6 Vdc) hFE 300 150 50 Collector–Emitter Saturation Voltage (IC = 3 Adc, IB = 60 mAdc) (IC = 6 Adc, IB = 120 mAdc) (IC = 10 Adc, IB = 300 mAdc) (IC = 6 Adc, IB = 120 mAdc, TC = – 40_C) VCE(sat) Base–Emitter Saturation Voltage (IC = 6 Adc, IB = 120 mAdc) (IC = 10 Adc, IB = 300 mAdc) (IC = 6 Adc, IB = 120 mAdc, TC = – 40_C) VBE(sat) Base–Emitter On Voltage (IC = 10 Adc, VCE = 6 Vdc) VBE(on) 550 350 150 2000 Vdc 1.5 1.7 2.7 2.0 Vdc 2.2 3 2.4 Diode Forward Voltage (IF = 10 Adc) 2.5 Vdc Vf 2 3.5 Vdc Cob 165 350 pF ts 7.5 15 µs tf 5.2 15 µs IS/B See Figure10 DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) SWITCHING CHARACTERISTICS Storage Time (VCC – 12 Vdc, IC = 6 Adc, IB1 = IB2 = 0.3 Adc) Fig. 2 Fall Time FUNCTIONAL TESTS Second Breakdown Collector Current with Base–Forward Biased Pulsed Energy Test (See Figure 12) IC2L / 2 550 mJ 1 Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%. ftest = 200 Hz PULSE WIDTH = 1 ms VCC = 16 Vdc UNCLAMPED L 0V t1 * B 470 40 TUT BC337 ≈ 1K VCEO ≈ 30 Vclamp * VCER B TUT 1N4001 51 100 ≈ 1K ≈ 30 100 E E Figure 1. Sustaining Voltage Test Circuit 3–232 C C 1N4001 * Adjust t1 such that * IC reaches Required * value. 2 Ω/20 W IC = 6 Adc 0 Vdc CLAMPED 47 20 ms VCC = 12 Vdc ≈ 15 Vdc IB = 0.3 Adc Figure 2. Switching Times Test Circuit Motorola Bipolar Power Transistor Device Data VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) BU323A 2000 TJ = 150°C hFE, DC CURRENT GAIN 1000 700 500 25°C 300 200 100 70 50 30 20 VCE = 3 Vdc VCE = 6 Vdc 0.2 0.3 0.5 0.7 1 5 2 3 IC, COLLECTOR CURRENT (AMP) 0.1 7 10 3 TJ = 25°C 2.5 2 10 A 1.5 3 1 0.5 0.002 1.7 IC/IB = 50 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 TJ 0.6 0.5 0.1 0.2 0.5 1.0 2.0 0.005 0.01 5.0 10 IC, COLLECTOR CURRENT (A) 1 2 2.1 2.0 TJ = 25°C 1.9 1.8 1.7 1.6 TJ 1.5 1.4 1.3 1.2 1.1 1.0 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (A) Figure 6. Base–Emitter Voltage 104 10 7 5 VCE = 250 Vdc TJ = 150°C IC, COLLECTOR CURRENT ( µA) ts 3 t, TIME ( µs) 0.5 2.2 Figure 5. Collector–Emitter Saturation Voltage 2 tf 1 0.7 0.5 TJ = 25°C IC/IB = 20 VCE = 12 Vdc 0.3 0.2 0.1 0.2 0.02 0.05 0.1 0.2 IB, BASE CURRENT (AMP) Figure 4. Collector Saturation Region VCE(sat) , COLLECTOR–EMITTER SATURATION VOLTAGE (V) VCE(sat) , COLLECTOR–EMITTER SATURATION VOLTAGE (V) Figure 3. DC Current Gain 1.6 1.5 6 IC = 0.5 A 0.3 0.5 0.7 1 3 5 7 2 IC, COLLECTOR CURRENT (AMP) 10 Figure 7. Turn–Off Switching Time Motorola Bipolar Power Transistor Device Data 20 103 IC = ICES 102 101 75°C 100 25°C FORWARD 10 –1 REVERSE – 0.2 0 + 0.2 + 0.4 + 0.6 VBE, BASE–EMITTER VOLTAGE (VOLTS) + 0.8 Figure 8. Collector Cutoff Region 3–233 BU323A r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.01 0.03 0.02 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 P(pk) RθJC(t) = r(t) RθJC RθJC = °C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.05 0.2 1 0.5 2 5 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1000 2000 Figure 9. Thermal Response 50 IC, COLLECTOR CURRENT (AMP) 20 100 µs 10 5.0 ms 5 2 1 1.0 ms 0.2 0.1 0.01 0.005 TC = 25°C dc BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 5 50 70 100 200 300 10 20 30 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 500 Figure 10. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 11. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. INDUCTIVE LOAD 100 11 mH POWER DERATING FACTOR (%) <1 VCC = 16 Vdc SECOND BREAKDOWN DERATING 80 VZ t1 0 Vdc 47 60 C 50 ms THERMAL DERATING 1N4001 470 BC337 TUT 40 ≈ 1K VZ = 400 V (BU323A) at IZ = 20 mA ≈ 30 0.22 µF 100 1N4001 E 20 0 2.2 B 0 40 80 120 TC, CASE TEMPERATURE (°C) Figure 11. Power Derating 3–234 160 200 t1 to be selected such that IC reaches 10 Adc before switch–off. NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit. Figure 12. Ignition Test Circuit Motorola Bipolar Power Transistor Device Data BU323A PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola Bipolar Power Transistor Device Data 3–235 BU323A Motorola reserves the right to make changes without further notice to any products herein. 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