ON NTB6412ANG N-channel power mosfet Datasheet

NTB6412AN, NTP6412AN,
NVB6412AN
N-Channel Power MOSFET
100 V, 58 A, 18.2 mW
Features
•
•
•
•
•
Low RDS(on)
High Current Capability
100% Avalanche Tested
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
100 V
N−Channel
D
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
ID
58
A
Continuous Drain Current RqJC
Steady
State
Power Dissipation
RqJC
Steady
State
TC = 25°C
TC = 100°C
S
167
W
IDM
240
A
TJ, Tstg
−55 to
+175
°C
IS
58
A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 44.7 A, L = 0.3 mH, RG = 25 W)
EAS
300
mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
TL
tp = 10 ms
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
G
41
PD
Pulsed Drain Current
TC = 25°C
260
4
4
1
1
2
3
4
Drain
Max
Unit
Junction−to−Case (Drain) Steady State
RqJC
0.9
°C/W
Junction−to−Ambient (Note 1)
RqJA
33
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
D2PAK
CASE 418B
STYLE 2
TO−220AB
CASE 221A
STYLE 5
°C
Symbol
2
3
THERMAL RESISTANCE RATINGS
Parameter
58 A
18.2 mW @ 10 V
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
ID MAX
(Note 1)
RDS(ON) MAX
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
NTB
6412ANG
AYWW
NTP
6412ANG
AYWW
1
Gate
3
Source
2
Drain
1
Gate
2
Drain
3
Source
6412AN = Specific Device Code
G
= Pb−Free Device
A
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 1
1
Publication Order Number:
NTB6412AN/D
NTB6412AN, NTP6412AN, NVB6412AN
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
V(BR)DSS/TJ
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
103
VGS = 0 V,
VDS = 100 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = $20 V
VGS(th)
VGS = VDS, ID = 250 mA
$100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On−Resistance
VGS(th)/TJ
4.0
9.2
RDS(on)
Forward Transconductance
2.0
gFS
V
mV/°C
VGS = 10 V, ID = 58 A
16.8
18.2
VGS = 10 V, ID = 20 A
15.6
18.2
VDS = 5 V, ID = 20 A
31
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
150
Total Gate Charge
QG(TOT)
73
Threshold Gate Charge
QG(TH)
VDS = 25 V, VGS = 0 V,
f = 1 MHz
2700
3500
400
500
100
pF
nC
2.5
VGS = 10 V, VDS = 80 V,
ID = 58 A
Gate−to−Source Charge
QGS
13.5
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
5.6
V
Gate Resistance
RG
2.2
W
16
ns
35
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 10 V, VDD = 80 V,
ID = 58 A, RG = 6.2 W
tf
140
70
126
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
Reverse Recovery Charge
IS = 58 A
TJ = 25°C
0.96
TJ = 125°C
0.89
85
VGS = 0 V, IS = 58 A,
dISD/dt = 100 A/ms
tb
QRR
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2
V
ns
60
25
270
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.3
nC
NTB6412AN, NTP6412AN, NVB6412AN
120
120
7.5 V
100
6.5 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ = 25°C
10 V
80
6.0 V
60
5.4 V
40
5.0 V
20
VDS w 10 V
100
80
60
40
20
VGS = 4.4 V
1
2
3
TJ = −55°C
4
0
5
2
6
7
Figure 2. Transfer Characteristics
0.03
0.02
0.01
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 10 V
0.05
TJ = 175°C
0.04
TJ = 125°C
0.03
0.02
TJ = 25°C
TJ = −55°C
0.01
0
10
100000
IDSS, LEAKAGE (nA)
1
−25
0
25
50
75
100
125
150
30
40
50
60
ID, DRAIN CURRENT (A)
VGS = 0 V
ID = 58 A
VGS = 10 V
1.5
20
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
3
2
8
0.06
Figure 3. On−Region versus Gate Voltage
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID = 58 A
TJ = 25°C
0.5
−50
4
Figure 1. On−Region Characteristics
0.04
2.5
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0
TJ = 25°C
TJ = 125°C
175
10000
TJ = 150°C
TJ = 125°C
1000
100
10
TJ, JUNCTION TEMPERATURE (°C)
20
30
40
50
60
70
80
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
90 100
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
5000
TJ = 25°C
VGS = 0 V
4000
3000
Ciss
2000
1000
0
Coss
Crss
0
10 20 30 40 50 60 70 80 90
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
100
4
tf
td(on)
1
40
2
0
VDS = 80 V
ID = 58 A
TJ = 25°C
0
10
60
td(off)
1
60
20
30
40
50
60
Qg, TOTAL GATE CHARGE (nC)
70
20
0
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
tr
10
80
Qgd
Qgs
6
IS, SOURCE CURRENT (A)
t, TIME (ns)
VDS = 80 V
ID = 58 A
VGS = 10 V
VGS
VDS
Figure 7. Capacitance Variation
1000
100
QT
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
NTB6412AN, NTP6412AN, NVB6412AN
10
RG, GATE RESISTANCE (W)
100
TJ = 25°C
VGS = 0 V
50
40
30
20
10
0
0.5
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1.0
Figure 10. Diode Forward Voltage versus
Current
1000
300
100
10 ms
100 ms
10
1 ms
10 ms
dc
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
VGS = 10 V
SINGLE PULSE
TC = 25°C
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
ID = 44.7 A
1000
200
100
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE
175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTB6412AN, NTP6412AN, NVB6412AN
1
D = 0.5
0.2
R(t) (°C/W)
0.1
0.1
0.05
0.02
0.01
0.01
0.001
0.000001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
1
10
100
1000
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTB6412ANG
D2PAK
(Pb−Free)
50 Units / Rail
NTB6412ANT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
NTP6412ANG
TO−220
(Pb−Free)
50 Units / Rail
NVB6412ANT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
NTB6412AN, NTP6412AN, NVB6412AN
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
1
2
A
S
3
−T−
SEATING
PLANE
K
W
J
G
D
H
3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
M
T B
M
N
R
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080 0.110
0.018 0.025
0.090 0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
P
U
L
M
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTB6412AN, NTP6412AN, NVB6412AN
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
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NTB6412AN/D
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