Intersil ACS253HMSR-02 Radiation hardened dual 4-input multiplexer with three-state output Datasheet

ACS253MS
Radiation Hardened
Dual 4-Input Multiplexer with Three-State Outputs
November 1997
Features
Description
• QML Qualified Per MIL-PRF-38535 Requirements
The Radiation Hardened ACS253MS is a Dual 4-Channel Multiplexer having two common binary control inputs for selecting 1
of 4 data channels. All inputs and outputs are buffered and are
designed for balanced propagation delay and transition times.
• 1.25Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-up Free Under any Conditions
- Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si)
- SEU Immunity . . . . . . . . . . . <1 x 10-10 Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . >100MeV/(mg/cm2)
Separate Output Enable inputs are provided to ease system
design. When OE1 or OE2 are set HIGH, the corresponding
output is configured into a high impedance state.
The ACS253MS is fabricated on a CMOS Silicon on Sapphire
(SOS) process, which provides an immunity to Single Event
Latch-up and the capability of highly reliable performance in
any radiation environment. These devices offer significant
power reduction and faster performance when compared to
ALSTTL types.
• Input Logic Levels . . .VIL = (0.3)(VCC), VIH = (0.7)(VCC)
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±8mA
• Quiescent Supply Current. . . . . . . . . . . . . . . . . . . 400µs
• Propagation Delay
- Enable to Output . . . . . . . . . . . . . . . . . . . . . . . . . 12ns
- Input or Address to Output . . . . . . . . . . . . . . . . . 15ns
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACS253 are
contained in SMD 5962-98007. A “hot-link” is provided
on our homepage with instructions for downloading.
http://www.intersil.com/data/sm/index.htm
Applications
• Digital Channel Selection
• Data Routing
• High Frequency Switching
Ordering Information
SMD PART NUMBER
TEMP. RANGE (oC)
INTERSIL PART NUMBER
5962F9800701VEC
ACS253DMSR-02
N/A
ACS253D/Sample-02
5962F9800701VXC
ACS253KMSR-02
N/A
N/A
-55 to 125
25
PACKAGE
16 Ld SBDIP
CASE OUTLINE
CDIP2-T16
16 Ld SBDIP
CDIP2-T16
-55 to 125
16 Ld Flatpack
CDFP4-F16
ACS253K/Sample-02
25
16 Ld Flatpack
CDFP4-F16
ACS253HMSR-02
25
Die
N/A
Pinouts
ACS253 (SBDIP)
TOP VIEW
ACS253 (FLATPACK)
TOP VIEW
1OE 1
16 VCC
1OE
1
16
VCC
S1 2
15 2OE
S1
2
15
2OE
1I3 3
14 S0
1I3
3
14
S0
1I2 4
13 2I3
1I2
4
13
2I3
1I1 5
12 2I2
1I1
5
12
2I2
1I0 6
11 2I1
1I0
6
11
2I1
1Y
7
10
2I0
GND
8
9
2Y
1Y 7
GND 8
10 2I0
9 2Y
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
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File Number
4428
ACS253MS
Die Characteristics
BACKSIDE FINISH:
DIE DIMENSIONS:
Sapphire
Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm ±25µm (20.6 mils ±1 mil)
Bond Pad: 110µm x 110µm (4.3 mils x 4.3 mils)
PASSIVATION:
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm ±0.15µm
METALLIZATION:
Type: Al
Metal 1 Thickness: 0.7µm ±0.1µm
Metal 2 Thickness: 1.0µm ±0.1µm
SPECIAL INSTRUCTIONS:
Bond VCC First
SUBSTRATE
ADDITIONAL INFORMATION:
Worst Case Density: <2.0 x 105 A/cm2
Transistor Count: 140
Silicon on Sapphire (SOS)
SUBSTRATE POTENTIAL:
Unbiased Insulator
Metallization Mask Layout
ACS253MS
S1
10E
VCC
20E
1I 3
S0
1I 2
2I 3
1I 1
2I 2
1T 0
2I 1
1Y
GND
2Y
2I 0
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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