POWER LPM9021QVF Single p-channel, -12v, -6.5a, power mosfet Datasheet

Preliminary Datasheet
LPM9021
Single P-Channel, -12V, -6.5A, Power MOSFET
General Description
Features
The LPM9021 is P-Channel enhancement MOSFET

Trench Technology
Effect Transistor. It uses advanced trench technology

Super high density cell design
and design to provide excellent RDS (ON) with low

Excellent ON resistance for higher DC current
gate charge. This device is suitable for using in DC-DC

Extremely Low Threshold Voltage
conversion, power switch

Small package DFN2*2-6L
and
charging
circuit.
Standard Product LPM9021QVF is Pb-free and
Halogen-free.
Applications
Order Information
LPM9021 □ □ □
F: Pb-Free

Driver for Relay, Solenoid, Motor, LED etc.

DC-DC converter circuit

Power Switch

Load Switch

Charging
Package Type
QV: DFN2*2-6L
Marking Information
Device
LPM9021QVF
Pin Configurations
D
6
D
5
Marking
S
4
S
LPM9021-01
2
D
May.-2013
DFN2*2-6L
3K/REEL
Pin Description
1,2
Drain Pin
3
Gate Pin
4
Source Pin
5,6
1
D
Shipping
Pin Description
Pin Number
D
Package
Drain Pin
3
G
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Page 1 of 7
Preliminary Datasheet
LPM9021
Absolute Maximum Ratings
Parameter
Symbol
10 S
Steady State
Drain-Source Voltage
VDS
-12
Gate-Source Voltage
VGS
±12
Continuous Drain Current
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Continuous Drain Current
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
TA=70°C
Pulsed Drain Current c
ID
ID
V
-6.5
-5.6
-5.2
-4.4
1.9
1.4
1.2
0.9
-4.8
-3.9
-3.8
-3.9
1.0
0.6
0.6
0.4
PD
PD
Unit
A
W
A
W
IDM
-24
A
Operating Junction Temperature
TJ
150
°C
Lead Temperature
TL
260
°C
Tstg
-55 to 150
°C
Storage Temperature Range
Thermal resistance ratings
Parameter
Symbol
Junction-to-Ambient Thermal Resistance
t ≤10 s
Typical
RθJA
Steady State
Junction-to-Ambient Thermal Resistance
t ≤10 s
RθJA
Steady State
Junction-to-Case Thermal Resistance
Steady State
RθJC
Maximum Unit
49
64
66
88
84
118
125
180
32
42
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380μs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
LPM9021-01
May.-2013
Email: [email protected]
www.lowpowersemi.com
Page 2 of 7
Preliminary Datasheet
LPM9021
Electrical Characteristics
Parameter
Symbol
Test Condition
Min
Typ.
Max
Units
OFF CHARACTERISTICS
-12
V
Drain-to-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = -250uA
Zero Gate Voltage Drain Current
IDSS
VDS =-12V, VGS = 0V
-1
uA
Gate-to-source Leakage Current
IGSS
VDS = 0 V, VGS =�12V
±100
nA
-0.52
-0.9
V
VGS = -4.5V, ID = -5.5A
23
29
VGS = -2.5V, ID = -2.5A
30
39
VGS = -1.8V, ID = -1.8A
39
50
VGS = -1.5V, ID = -1.5A
48
90
VDS =-5.0V, ID =-5.5A
23
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance b, c
Forward Transconductance
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = -250uA
-0.4
mΩ
S
CAPACITANCES, CHARGES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
1970
VGS = 0 V,
205
f = 1.0 MHz
VDS = -10 V
pF
195
21.0
VGS = -4.5 V,
0.95
VDS = -10 V,
nC
1.30
ID = -6.5A
7.60
SWITCHING CHARACTERISTICS
VGS = -4.5 V,
16
tr
VDD = -10 V,
15.5
Turn-Off Delay Time
td(OFF)
ID=-6.5A,
78
Fall Time
tf
RG=6 �
44
Turn-On Delay Time
td(ON)
Rise Time
ns
BODY DIODE CHARACTERISTICS
Forward Voltage
LPM9021-01
May.-2013
VSD
VGS = 0 V, IS =-1.0A
Email: [email protected]
-
-0.76
www.lowpowersemi.com
1.5
V
Page 3 of 7
Preliminary Datasheet
LPM9021
Typical Characteristics (Ta=25℃, unless otherwise noted)
LPM9021-01
May.-2013
Email: [email protected]
www.lowpowersemi.com
Page 4 of 7
Preliminary Datasheet
LPM9021-01
May.-2013
Email: [email protected]
www.lowpowersemi.com
LPM9021
Page 5 of 7
Preliminary Datasheet
LPM9021-01
May.-2013
Email: [email protected]
www.lowpowersemi.com
LPM9021
Page 6 of 7
Preliminary Datasheet
LPM9021
Packaging Information
Top View
Side View
Bottom View
Symbol
Dimensions in millimeter
Min
Typ
Max
A
0.70
0.75
0.80
A1
0.00
-
0.05
A3
0.203 Ref.
D
1.95
2.00
2.05
E
1.95
2.00
2.05
D2
0.85
0.90
0.95
E2
0.75
0.80
0.85
D3
0.25
0.30
0.35
E3
0.51
0.56
0.61
b
0.25
0.30
0.35
L
0.30
0.35
0.40
e
LPM9021-01
May.-2013
0.65 BSC.
Email: [email protected]
www.lowpowersemi.com
Page 7 of 7
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