PHILIPS BLF6G20-45 Uhf power ldmos transistor Datasheet

BLF6G20-45
UHF power LDMOS transistor
Rev. 01 — 20 February 2006
Objective data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1:
Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
VDS
PL(AV)
(MHz)
(V)
(W)
1805 to 1880
28
2.5
ηD
ACPR
(dB)
(%)
(dBc)
17
14
−50 [1]
Gp
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 28 V and an IDq of 350 mA:
◆ Average output power = 2.5 W
◆ Power gain = 17 dB (typ)
◆ Efficiency = 14 %
◆ ACPR = −50 dBc
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (1800 MHz to 2000 MHz)
■ Internally matched for ease of use
1.3 Applications
■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.
BLF6G20-45
Philips Semiconductors
UHF power LDMOS transistor
2. Pinning information
Table 2:
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Symbol
<tbd>
1
[1]
3
2
[1]
Connected to flange
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
Version
BLF6G20-45
-
flanged ceramic package; 2 mounting holes; 2 leads
SOT608A
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
<tbd> A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
5. Thermal characteristics
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-case)
thermal resistance
from junction to case
Tcase = 80 °C;
PL = <tbd>
<tbd>
<tbd>
<tbd>
K/W
BLF6G20-45_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
2 of 8
BLF6G20-45
Philips Semiconductors
UHF power LDMOS transistor
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C per section; unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 60 mA
<tbd> 1.6
<tbd> V
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 300 mA
<tbd> 2
<tbd> V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
1.5
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
9
11
-
A
IGSS
gate leakage current
VGS = 13 V; VDS = 0 V
-
-
150
nA
gfs
forward transconductance
VDS = 10 V; ID = 3 A
-
<tbd> -
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 2.1 A
-
0.25
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
<tbd> -
S
<tbd> Ω
pF
7. Application information
Table 7:
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 1807.5 MHz; f2 = 1812.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz;
RF performance at VDS = 28 V; IDq = 2 × 900 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit
Symbol
Parameter
PL(AV)
average output power
Conditions
Min
Typ
Max
Unit
-
2.5
-
W
Gp
power gain
PL(AV) = 2.5 W
<tbd> 17
-
dB
ηD
drain efficiency
PL(AV) = 2.5 W
<tbd> 14
-
%
IMD3
ACPR
third order intermodulation distortion
PL(AV) = 2.5 W
-
<tbd> <tbd> dBc
adjacent channel power ratio
PL(AV) = 2.5 W
-
−50
<tbd> dBc
7.1 Ruggedness in class-AB operation
The BLF6G20-45 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 350 mA; PL = 45 W (CW); f = 1880 MHz.
BLF6G20-45_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
3 of 8
BLF6G20-45
Philips Semiconductors
UHF power LDMOS transistor
8. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads
SOT608A
D
A
F
3
D1
U1
B
q
c
C
1
H
E1
p
U2
E
w1 M A M B M
2
A
w2 M C M
b
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.62
3.76
7.24
6.99
0.15
0.10
10.21 10.29
10.01 10.03
inches
0.182
0.148
0.285 0.006
0.275 0.004
0.402 0.405
0.394 0.395
OUTLINE
VERSION
D
D1
F
H
p
Q
q
U1
U2
w1
w2
10.21 10.29
10.01 10.03
1.14
0.89
15.75
14.73
3.30
2.92
1.70
1.35
15.24
20.45
20.19
9.91
9.65
0.25
0.51
0.402 0.405
0.394 0.395
0.045 0.620
0.035 0.580
0.130
0.115
0.067
0.600
0.053
0.805
0.795
0.390
0.010 0.020
0.380
E
E1
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-02-22
02-02-11
SOT608A
Fig 1. Package outline SOT608A
BLF6G20-45_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
4 of 8
BLF6G20-45
Philips Semiconductors
UHF power LDMOS transistor
9. Abbreviations
Table 8:
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
LDMOS
Laterally Diffused Metal Oxide Semiconductor
PAR
Peak-to-Average power Ratio
PDPCH
transmission Power of the Dedicated Physical CHannel
RF
Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
BLF6G20-45_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
5 of 8
BLF6G20-45
Philips Semiconductors
UHF power LDMOS transistor
10. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice Doc. number
Supersedes
BLF6G20-45_1
20060220
Objective data sheet
-
-
BLF6G20-45_1
Objective data sheet
-
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
6 of 8
BLF6G20-45
Philips Semiconductors
UHF power LDMOS transistor
11. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Trademarks
13. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
BLF6G20-45_1
Objective data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 20 February 2006
7 of 8
BLF6G20-45
Philips Semiconductors
UHF power LDMOS transistor
16. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
General description. . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal characteristics. . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Application information. . . . . . . . . . . . . . . . . . .
Ruggedness in class-AB operation. . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information . . . . . . . . . . . . . . . . . . . . .
1
1
1
1
2
2
2
2
3
3
3
4
5
6
7
7
7
7
7
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 20 February 2006
Document number: BLF6G20-45_1
Published in The Netherlands
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