£/ ne. ,O I TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 MMBR920L Silicon NPN RF Transistor DESCRIPTION • Low Noise NF= 2.4dB TYP. @ f= 500MHz • High Gain SOT- 2 3 package I Gpe= 15dB TYP. @ f= 500MHz J APPLICATIONS • Designed for thick and thin-film circuits using surface mount H,h* ^ •-•III components and requiring low-noise , high-gain signal amplification at frequencies to 1 GHz. Marking VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V PARAMETER / \ Ic PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @TC= 25'C Junction Temperature Storage Temperature Range 3 35 0.35 150 -55-150 V mA W •c •c n) u ^J c_ h--|L mm DIM VEBO 2 : Emitter 3: Collector LJ! j U - ii kH ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL B C MIN MAX A 0.37 0.31 B 1.19 1. 10 C 2.10 2.30 D 0. 39 1.05 C- 1.7S 2.05 H 2.65 3. 05 K 1. 10 1.30 L 0. IB 0.61 M 0.076 0. 17S NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors MMBR920L Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS Tc=25°C unless otherwise specified PARAMETER SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage l c =1mA;l B =0 15 V V(BR)CBO Collector-Base Breakdown Voltage lc= 0.1mA; I E =0 20 V V(BR)EBO Emitter-Base Breakdown Voltage l 6 =0.1mA;l c =0 2 V ICBO Collector Cutoff Current VCB=10V; I E =0 hFE DC Current Gain lc=14mA;V C E=10V COB Output Capacitance | E =0;V C B =10V;f= 1MHz ft Current-Gain—Bandwidth Product lc= 14mA ; VCE= 10V; f= O.SGHz 4.5 GHz NF Noise Figure lc= 2mA ; VCE= 10V; f= O.SGHz 2.4 dB NF Noise Figure lc=2mA;V C E=10V;f=1GHz 3.0 dB Gpe Common-Emitter Amplifier Power Gain lc= 2mA ; VCE= 10V; f= O.SGHz 15 dB Gpe Common-Emitter Amplifier Power Gain lc=2mA;VcE=10V;f=1GHz 10 dB 50 25 nA 250 1.0 PF