MOTOROLA SEMICONDUCTOR TECHNICAL DATA MAC15FP Series MAC15AFP Series Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. ISOLATED TRIACs THYRISTORS 15 AMPERES RMS 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes (MAC15AFP Series) MT2 MT1 CASE 221C-02 STYLE 3 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC15-4FP, MAC15A4FP MAC15-6FP, MAC15A6FP MAC15-8FP, MAC15A8FP MAC15-10FP, MAC15A10FP On-State RMS Current (TC = +80°C)(2) Full Cycle Sine Wave 50 to 60 Hz (TC = +95°C) Value VDRM Unit Volts 200 400 600 800 IT(RMS) 15 12 Amps Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) preceded and followed by rated current ITSM 150 Amps Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps Average Gate Power (TC = +80°C, t = 8.3 ms) Peak Gate Current Peak Gate Voltage RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Storage Temperature Range p 20%) VGM 10 Volts V(ISO) 1500 Volts TJ –40 to +125 °C Tstg –40 to +150 °C 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data 3–63 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Blocking Current (Either Direction) TJ = 25°C (VD = Rated VDRM, TJ = 125°C, Gate Open) Peak On-State Voltage (Either Direction) (ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) Symbol Min Typ Max Unit IDRM — — — — 10 2 µA mA VTM — 1.3 1.6 Volts Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +110°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY VGT mA — — — — — — — — 50 50 50 75 Volts — — — — 0.9 0.9 1.1 1.4 2 2 2 2.5 0.2 0.2 — — — — Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) IH — 6 40 mA Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) tgt — 1.5 — µs dv/dt(c) — 5 — V/µs Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80°C) Trigger devices are recommended for gating on Triacs. They provide: QUADRANT DEFINITIONS 1. Consistent predictable turn-on points. MT2(+) QUADRANT II QUADRANT I 2. Simplified circuitry. 3. Fast turn-on time for cooler, more efficient and reliable operation. MT2(+), G(–) MT2(+), G(+) G(–) ELECTRICAL CHARACTERISTICS of RECOMMENDED BIDIRECTIONAL SWITCHES G(+) QUADRANT III QUADRANT IV MT2(–), G(–) MT2(–), G(+) MT2(–) General Usage Part Number MBS4991 MBS4992 VS 6–10 V 7.5–9 V IS 350 µA Max 120 µA Max VS1–VS2 0.5 V Max 0.2 V Max Temperature Coefficient 0.02%/°C Typ 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. 3–64 Motorola Thyristor Device Data IGTM , , GATE TRIGGER CURRENT (NORMALIZED) TYPICAL CHARACTERISTICS TC , CASE TEMPERATURE ( °C) 130 30° 120 60° 90° 110 125°C 150° to 180° 100 dc α 90 α α = CONDUCTION ANGLE 80 0 2 4 6 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) 14 16 3 2 1 0.7 0.5 0.3 –60 50 90° 4.4 20 0 2 4 6 8 10 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 2. On-State Power Dissipation VGTM , GATE TRIGGER VOLTAGE (NORMALIZED) 4 30° 4 3 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2 10 7 5 3 2 1 0.7 1 0.5 0.7 0.3 0.5 0.2 –40 140 125°C 8 α = CONDUCTION ANGLE 0.3 –60 120 30 α 0 100 TJ = 25°C 60° i F , INSTANTANEOUS FORWARD CURRENT (AMP) PD(AV) , AVERAGE POWER DISSIPATION (WATTS) dc α 12 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) 70 120° TJ = 125°C –20 100 α = 180° 16 –40 Figure 4. Typical Gate Trigger Current Figure 1. RMS Current Derating 20 OFF-STATE VOLTAGE = 12 Vdc ALL MODES –20 0 20 40 60 80 100 120 140 0.1 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 TJ, JUNCTION TEMPERATURE (°C) vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Typical Gate Trigger Voltage Figure 5. Maximum On-State Characteristics Motorola Thyristor Device Data 3–65 300 GATE OPEN APPLIES TO EITHER DIRECTION 2 I TSM , PEAK SURGE CURRENT (AMP) I H , HOLDING CURRENT (NORMALIZED) 3 1 0.7 0.5 0.3 –60 200 100 70 50 TC = 80°C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 30 –40 –20 0 20 40 60 80 100 120 2 1 140 TJ, JUNCTION TEMPERATURE (°C) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 6. Typical Holding Current 3 5 NUMBER OF CYCLES 7 10 Figure 7. Maximum Nonrepetitive Surge Current 1 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k 2k 5k 10 k t, TIME (ms) Figure 8. Thermal Response 3–66 Motorola Thyristor Device Data