Fairchild FDS4435 P-channel logic level powertrenchâ ¢mosfet Datasheet

FDS4435A
P-Channel Logic Level PowerTrench MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
•
These devices are well suited for notebook computer applications: load switching and power management, battery
charging circuits, and DC/DC conversion.
D
D
-9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V
RDS(ON) = 0.025 W @ VGS = -4.5 V
•
Low gate charge (21nC typical).
•
High performance trench technology for extremely
low RDS(ON).
•
High power and current handling capability.
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA = 25°C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
-9
A
- Continuous
(Note 1a)
- Pulsed
PD
Power Dissipation for Single Operation
-50
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
W
1
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS4435A
FDS4435A
13’’
12mm
2500 units
ã2001 Fairchild Semiconductor Corporation
FDS4435A Rev. D
FDS4435A
October 2001
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
ID = -250 µA,Referenced to 25°C
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
-1
-10
100
µA
IGSSF
VDS = -24 V, VGS = 0
TJ = 125°C
VGS = 20 V, VDS = 0 V
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics
-30
V
-26
mV/°C
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
ID = -250 µA,Referenced to 25°C
Static Drain-Source On-Resistance
VGS = -10 V, ID = -9 A
-1
-1.7
-2
4.2
TJ = 125°C
VGS = -4.5 V, ID = -7 A
V
mV/°C
0.015
0.017
0.021
0.030
0.023
0.025
-40
Ω
ID(on)
On-State Drain Current
VGS = -10 V, VDS = -5 V
gFS
Forward Transconductance
VDS = -10 V, ID = -9 A
25
A
S
VDS = -15 V, VGS = 0 V
f = 1.0 MHz
2010
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
tf
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
590
pF
260
pF
(Note 2)
VDD = -15 V, ID = -1 A
VGS = -10 V, RGEN = 6 Ω
12
22
ns
15
27
ns
Turn-Off Delay Time
100
140
ns
Turn-Off Fall Time
55
80
ns
21
30
nC
VDS = -15 V, ID = -9 A
VGS = -5 V,
6
nC
8
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -2.1 A
-2.1
trr
Source-Drain Reverse Recovery Time
IF = -10 A, dlF/dt = 100 A/µS
(Note 2)
A
0.75
-1.2
V
36
80
ns
Notes:
1: RqJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
c) 125° C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
FDS4435A Rev. D
FDS4435A
Electrical Characteristics
FDS4435A
Typical Characteristics
2.4
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
- I D, DRAIN-SOURCE CURRENT (A)
VGS= -10V
-6.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
2.2
VGS = -3.5V
2
1.8
-4.0V
1.6
-4.5V
-5.0V
1.4
-6.0V
-7.0V
1.2
-8.0V
-10V
1
0.8
0
-V DS, DRAIN-SOURCE VOLTAGE (V)
30
40
50
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
0.07
1.6
RDS(ON), ON RESISTANCE (OHM)
VGS = -10V
ID = -9A
1.4
1.2
1
0.8
ID = -4.5A
0.06
0.05
0.04
O
0.03
TJ = 125 C
0.02
O
TJ = 25 C
0.01
0
0.6
-50
-25
0
25
50
75
100
125
2
150
4
TJ, JUNCTION TEMPERATURE (OC)
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage
100
40
TJ = -55 C
-IS, REVERSE DRAIN CURRENT (A)
O
VDS = -5V
-ID, DRAIN CURRENT (A)
20
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
NORMALIZED ON-RESISTANCE
10
O
25 C
O
30
125 C
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0
1
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature
FDS4435A Rev. D
(continued)
2500
ID = -8.8A
f = 1 MHz
VGS = 0 V
VDS = -5V
-10V
8
2000
-15V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
CISS
1500
1000
2
500
0
0
COSS
CRSS
0
5
10
15
20
25
30
35
0
5
Qg, GATE CHARGE (nC)
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
Figure 7. Gate-Charge Characteristics
50
100
RDS(ON) LIMIT
SINGLE PULSE
RθJA =125°C/W
TA = 25°C
100µs
40
1ms
10
POWER (W)
10ms
100ms
1s
10s
1
DC
VGS = -10V
SINGLE PULSE
o
RθJA = 125 C/W
0.1
30
20
10
o
TA = 25 C
0.01
0.1
1
10
0
0.001
100
0.01
-VDS, DRAIN-SOURCE VOLTAGE (V)
r(t), NORM ALIZED EFFECTIVE
Figure 9. Maximum Safe Operating Area
TR ANSI ENT TH ER MAL RESISTANC E
-ID, DRAIN CURRENT (A)
FDS4435A
Typical Characteristics
0.1
1
10
SINGLE PULSE TIME (SEC)
100
300
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.5
0.2
0.1
0.05
D = 0.5
R θJ A (t) = r(t) * R θJ A
R θJ A= 125°C /W
0.2
0.1
00
.5
P(pk )
0.0 2
0.02
t1
0.01
0.01
S i n g le P ul s e
t2
TJ - TA = P * RθJA ( t)
0.0 05
D u t y C y c l e, D = t 1 /t2
0.0 02
0.0 01
0.0001
0.0 01
0.01
0.1
1
10
100
300
t 1, TI M E (s e c )
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS4435A Rev. D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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