Infineon BFN39 Pnp silicon high-voltage transistor Datasheet

BFN37, BFN39
PNP Silicon High-Voltage Transistors
Suitabled for video output stages in TV sets and
4
switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
3
Complementary types: BFN36, BFN38 (NPN)
2
1
Type
Marking
Pin Configuration
BFN37
BFN 37
1=B
2=C
3=E
4=C
SOT223
BFN39
BFN 39
1=B
2=C
3=E
4=C
SOT223
VPS05163
Package
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Unit
BFN37
BFN39
VCEO
250
300
Collector-base voltage
VCBO
250
300
Emitter-base voltage
VEBO
5
5
DC collector current
IC
200
Peak collector current
ICM
500
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 124 °C
Ptot
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
mA
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
17
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
BFN37, BFN39
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
BFN37
250
-
-
BFN39
300
-
-
BFN37
250
-
-
BFN39
300
-
-
5
-
-
V(BR)CBO
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE = 100 µA, IC = 0
Collector cutoff current
nA
ICBO
VCB = 200 V, IE = 0
BFN37
-
-
100
VCB = 250 V, IE = 0
BFN39
-
-
100
Collector cutoff current
µA
ICBO
VCB = 200 V, IE = 0 , TA = 150 °C
BFN37
-
-
20
VCB = 250 V, IE = 0 , TA = 150 °C
BFN39
-
-
-
-
-
100
Emitter cutoff current
IEBO
nA
VEB = 4 V, IC = 0
DC current gain 1)
-
hFE
IC = 1 mA, VCE = 10 V
25
-
-
IC = 10 mA, VCE = 10 V
40
-
-
BFN37
40
-
-
BFN39
30
-
-
IC = 30 mA, VCE = 10 V
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
V
VCEsat
BFN37
-
-
0.4
BFN39
-
-
0.5
-
-
0.9
Base-emitter saturation voltage 1)
VBEsat
IC = 20 mA, IB = 2 mA
1) Pulse test: t < 300s; D < 2%
2
Nov-30-2001
BFN37, BFN39
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
100
-
MHz
Ccb
-
2.5
-
pF
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 300 V, f = 1 MHz
3
Nov-30-2001
BFN37, BFN39
Collector current I C = f (VBE)
Total power dissipation Ptot = f(TS)
VCE = 10V
BFN 37/39
10 3
1.8
EHP00641
mA
W
P tot
ΙC
1.4
10 2
1.2
5
1
10 1
0.8
5
0.6
10 0
0.4
5
0.2
0
0
15
30
45
60
75
90 105 120
10 -1
°C 150
TS
0
0.5
V
1.0
V BE
Permissible pulse load
Collector cutoff current ICBO = f (T A)
Ptotmax / PtotDC = f (tp )
VCB = 200V
10 3
BFN 37/39
Ptot max
5
Ptot DC
10 4
nA
EHP00254
D=
tp
T
tp
10 1
max
10 2
5
typ
10 1
5
5
10 0
10 -6
EHP00644
10 3
5
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
BFN 37/39
Ι CB0
T
10 2
1.5
10 0
5
10 -5
10 -4
10 -3
10 -2
s
10 -1
10 0
tp
0
50
˚C 150
100
TA
4
Nov-30-2001
BFN37, BFN39
DC current gain hFE = f (IC )
Transition frequency fT = f (IC)
VCE = 10V
VCE = 10V
10 3
BFN 37/39
EHP00642
10 3
BFN 37/39
EHP00643
MHz
5
h FE
fT
10 2
5
10 2
5
10 1
5
10 0
-1
10
5 10
0
5 10
1
5 10
2
mA 10
10 1
10 0
3
5
10 1
5
10 2 mA 5
10 3
ΙC
ΙC
5
Nov-30-2001
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