SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices TRIACS 8.0 AMPERES RMS 400 thru 800 VOLTS Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 8.0 Amperes RMS at 100°C • Uniform Gate Trigger Currents in Three Modes • High Immunity to dv/dt — 500 V/µs minimum at 125°C MT2 • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating di/dt — 6.5 A/ms minimum at 125°C MT1 MT2 G CASE 221A-06 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg Parameter Peak Repetitive Off-State Voltage (1) (– 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) Value Unit Volts MAC9D MAC9M MAC9N 400 600 800 On-State RMS Current (60 Hz, TC = 100°C) 8.0 A Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) 80 A Circuit Fusing Consideration (t = 8.3 ms) 26 A2sec Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) 16 Watts 0.35 Watts Operating Junction Temperature Range – 40 to +125 °C Storage Temperature Range – 40 to +150 °C Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient 2.2 62.5 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 260 °C Average Gate Power (t = 8.3 ms, TC = 80°C) THERMAL CHARACTERISTICS RθJC RθJA TL (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data 3–49 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Min Typ Max — — — — 0.01 2.0 Peak On-State Voltage* (ITM = ± 11 A Peak) — 1.2 1.6 Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) 10 10 10 16 18 22 50 50 50 Hold Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) — 30 50 Latch Current (VD = 24 V, IG = 50 mA) MT2(+), G(+); MT2(–), G(–) MT2(+), G(–) — — 20 30 50 80 Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) 0.5 0.5 0.5 0.69 0.77 0.72 1.5 1.5 1.5 6.5 — — A/ms 500 — — V/µs Symbol Unit OFF CHARACTERISTICS IDRM Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) mA TJ = 25°C TJ = 125°C ON CHARACTERISTICS VTM IGT IH IL VGT Volts mA mA mA Volts DYNAMIC CHARACTERISTICS (di/dt)c dv/dt Rate of Change of Commutating Current* See Figure 10. (VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) CL = 10 µF LL = 40 mH Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 125 12 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (°C) DC 120 α = 120, 90, 60, 30° 115 α = 180° 110 DC 105 100 0 1 2 3 4 5 6 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. RMS Current Derating 3–50 7 8 10 180° 8 120° 6 60° 4 90° α = 30° 2 0 0 1 2 3 4 5 6 IT(RMS), ON-STATE CURRENT (AMP) 7 8 Figure 2. On-State Power Dissipation Motorola Thyristor Device Data 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 TYPICAL AT TJ = 25°C I T, INSTANTANEOUS ON-STATE CURRENT (AMP) MAXIMUM @ TJ = 125°C 10 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1 · 104 1000 Figure 4. Thermal Response MAXIMUM @ TJ = 25°C 40 1 I H, HOLD CURRENT (mA) 35 30 MT2 POSITIVE 25 20 15 MT2 NEGATIVE 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 5 – 50 5 – 30 – 10 Figure 3. On-State Characteristics VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA) Q2 Q3 Q1 10 – 30 – 10 30 70 10 50 90 TJ, JUNCTION TEMPERATURE (°C) 110 Figure 6. Gate Trigger Current Variation Motorola Thyristor Device Data 110 130 110 130 Figure 5. Hold Current Variation 100 1 – 50 10 30 50 70 90 TJ, JUNCTION TEMPERATURE (°C) 130 1 0.95 0.9 0.85 0.8 075 0.7 0.65 0.6 0.55 0.5 0.45 0.4 – 50 Q3 Q1 Q2 – 30 – 10 10 70 30 50 90 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Gate Trigger Voltage Variation 3–51 dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s) 5000 100 (dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/µ s) 4.5K 4K 3.5K MT2 NEGATIVE 3K 2.5K 2K 1.5K 1K MT2 POSITIVE 500 0 1 10 100 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) TJ = 125°C tw VDRM 1 10 1000 75°C f= 1 2 tw 6f I (di/dt)c = TM 1000 15 20 25 30 35 40 45 50 55 60 (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential) Figure 9. Critical Rate of Rise of Commutating Voltage LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC 1N4007 MEASURE I TRIGGER CHARGE CONTROL NON-POLAR CL TRIGGER CONTROL CHARGE 100°C 10 – + 400 V 2 1N914 51 G 1 Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage 3–52 Motorola Thyristor Device Data